Inventor · disambiguated record
Ming-Chang Kuo
Also filed as: KUO MING-CHANG
51 granted patents·6 pending applications·154 citations·filing 2005–2024
97Inventor score
Files withMACRONIX INT CO LTD33EXCEL CELL ELECT CO LTD9TAIWAN SEMICONDUCTOR MFG CO LTD5KUO MING-CHANG4GOOD SKY ELECTRIC CO LTD1
Top patents by PatentIndex Score
57 records- 0197US11050423B1Flip-flop device and method of operating flip-flop deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 29, 2021·4 cites·20 claims
- 0295US7512012B2Non-volatile memory and manufacturing method and operating method thereof and circuit system including the non-volatile memoryMACRONIX INT CO LTD·Filed 2007·Granted Mar 31, 2009·41 cites·53 claims
- 0390US7994884B2Electromagnetic relayGOOD SKY ELECTRIC CO LTD·Filed 2009·Granted Aug 9, 2011·22 cites·5 claims
- 0489US9437375B2Electromagnetic relay assembly having a switch control unitEXCEL CELL ELECT CO LTD·Filed 2015·Granted Sep 6, 2016·5 cites·8 claims
- 0586US12301228B2Flip-flop device and method of operating flip-flop deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 0679US11151297B2Multiple fin count layout, method, system, and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·1 cites·20 claims
- 0779US7411836B2Method of operating non-volatile memoryMACRONIX INT CO LTD·Filed 2005·Granted Aug 12, 2008·10 cites·15 claims
- 0878US8241928B2Test structure and method for detecting charge effects during semiconductor processingLEE MING-HSIU·Filed 2010·Granted Aug 14, 2012·4 cites·19 claims
- 0976US7817472B2Operating method of memory deviceMACRONIX INT CO LTD·Filed 2008·Granted Oct 19, 2010·9 cites·15 claims
- 1075US11996842B2Flip-flop device and method of operating flip-flop deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 1174US11509306B2Flip-flop device and method of operating flip-flop deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·0 cites·20 claims
- 1271US7501837B2Test structure and method for detecting charge effects during semiconductor processing using a delayed inversion point techniqueMACRONIX INT CO LTD·Filed 2006·Granted Mar 10, 2009·3 cites·14 claims
- 1371US7209385B1Array structure for assisted-charge memory devicesMACRONIX INT CO LTD·Filed 2006·Granted Apr 24, 2007·4 cites·23 claims
- 1469US7474562B2Method of forming and operating an assisted charge memory deviceMACRONIX INT CO LTD·Filed 2005·Granted Jan 6, 2009·4 cites·8 claims
- 1567US7672159B2Method of operating multi-level cellMACRONIX INT CO LTD·Filed 2007·Granted Mar 2, 2010·6 cites·14 claims
- 1666US7852680B2Operating method of multi-level memory cellMACRONIX INT CO LTD·Filed 2008·Granted Dec 14, 2010·5 cites·19 claims
- 1766US7778076B2Memory unitMACRONIX INT CO LTD·Filed 2007·Granted Aug 17, 2010·3 cites·24 claims
- 1866US7512000B2Memory unitMACRONIX INT CO LTD·Filed 2007·Granted Mar 31, 2009·3 cites·10 claims
- 1965US8304755B2Three-dimensional semiconductor structureKUO MING-CHANG·Filed 2009·Granted Nov 6, 2012·3 cites·7 claims
- 2063US8523370B2Electronic apparatusYANG CHO-CHUAN·Filed 2010·Granted Sep 3, 2013·2 cites·7 claims
- 2163US7242052B2Non-volatile memoryMACRONIX INT CO LTD·Filed 2005·Granted Jul 10, 2007·2 cites·2 claims
- 2263US7170129B2Non-volatile memory, fabrication method thereof and operation method thereofMACRONIX INT CO LTD·Filed 2005·Granted Jan 30, 2007·2 cites·4 claims
- 2362US7787294B2Operating method of memoryMACRONIX INT CO LTD·Filed 2008·Granted Aug 31, 2010·4 cites·19 claims
- 2462US2025069833A1Electromagnetic relayEXCEL CELL ELECT CO LTD·Filed 2024·Application pending·0 cites
- 2561US7723778B22-bit assisted charge memory device and method for making the sameMACRONIX INT CO LTD·Filed 2006·Granted May 25, 2010·2 cites·26 claims
- 2660US12437948B2Electromagnetic relayEXCEL CELL ELECT CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·9 claims
- 2758US7759721B2Single poly non-volatile memory device with inversion diffusion regions and methods for operating the sameMACRONIX INT CO LTD·Filed 2006·Granted Jul 20, 2010·1 cites·9 claims
- 2857US7655970B2Single poly non-volatile memory device with inversion diffusion regions and methods for operating the sameMACRONIX INT CO LTD·Filed 2006·Granted Feb 2, 2010·1 cites·14 claims
- 2956US7570514B2Method of operating multi-level cell and integrate circuit for using multi-level cell to store dataMACRONIX INT CO LTD·Filed 2007·Granted Aug 4, 2009·3 cites·19 claims
- 3055US7994883B2Electromagnetic relayKUO MING-CHANG·Filed 2009·Granted Aug 9, 2011·2 cites·8 claims
- 3154US7883975B2Method for fabricating a non-volatile memory including converting a silicon layer-which formed over a stacked structure having a charge storage layer-into an insulating layerMACRONIX INT CO LTD·Filed 2009·Granted Feb 8, 2011·0 cites·15 claims
- 3254US7821838B2Method for erasing/programming/correcting a multi-level cell (MLC)MACRONIX INT CO LTD·Filed 2007·Granted Oct 26, 2010·2 cites·25 claims
- 3353US8178407B2Systems and methods for a high density, compact memory arrayHSU TZU-HSUAN·Filed 2009·Granted May 15, 2012·0 cites·14 claims
- 3453US7554851B2Reset method of non-volatile memoryMACRONIX INT CO LTD·Filed 2007·Granted Jun 30, 2009·2 cites·11 claims
- 3552US7206227B1Architecture for assisted-charge memory arrayMACRONIX INT CO LTD·Filed 2006·Granted Apr 17, 2007·2 cites·20 claims
- 3651US7485531B2Fabricating method of a non-volatile memoryMACRONIX INT CO LTD·Filed 2007·Granted Feb 3, 2009·0 cites·15 claims
- 3750US7714375B2Flash memory with 4-bit memory cellMACRONIX INT CO LTD·Filed 2007·Granted May 11, 2010·0 cites·10 claims
- 3849US7732256B2Fabrication method of non-volatile memoryMACRONIX INT CO LTD·Filed 2006·Granted Jun 8, 2010·0 cites·5 claims
- 3949US2009186212A1Non-volatile memory and methods for fabricating the sameMACRONIX INT CO LTD·Filed 2008·Application pending·0 cites
- 4048US8378408B2Memory devicesMACRONIX INT CO LTD·Filed 2010·Granted Feb 19, 2013·0 cites·15 claims
- 4148US7608886B2Systems and methods for a high density, compact memory arrayMACRONIX INT CO LTD·Filed 2006·Granted Oct 27, 2009·0 cites·31 claims
- 4248US2008023699A1A test structure and method for detecting charge effects during semiconductor processingMACRONIX INT CO LTD·Filed 2006·Application pending·0 cites
- 4346US11170960B2Electromagnetic relayEXCEL CELL ELECT CO LTD·Filed 2020·Granted Nov 9, 2021·0 cites·7 claims
- 4444US7936607B2Non-volatile memoryMACRONIX INT CO LTD·Filed 2009·Granted May 3, 2011·0 cites·8 claims
- 4543US7996985B2Method of making a relayEXCEL CELL ELECT CO LTD·Filed 2007·Granted Aug 16, 2011·0 cites·1 claims
- 4642US11087942B2Electromagnetic relay and a method of making the sameEXCEL CELL ELECT CO LTD·Filed 2019·Granted Aug 10, 2021·0 cites·10 claims
- 4742US2007212800A1Methods for detecting charge effects during semiconductor processingMACRONIX INT CO LTD·Filed 2006·Application pending·0 cites
- 4841US8659952B2Method of operating non-volatile memoryKUO MING-CHANG·Filed 2008·Granted Feb 25, 2014·0 cites·12 claims
- 4941US8300476B2Method for erasing/programming/correcting memoryKUO MING-CHANG·Filed 2010·Granted Oct 30, 2012·0 cites·25 claims
- 5039US7778081B2Method for performing operations by applying periodic voltage pulses to control gate of an ono memory cellMACRONIX INT CO LTD·Filed 2007·Granted Aug 17, 2010·0 cites·21 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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