Non-volatile memory and methods for fabricating the same

Abstract

A non-volatile memory including a substrate, source/drain regions, a first insulating layer, a charge storage layer, a second insulating layer, and a conductive layer is provided. The source/drain regions are respectively disposed in the substrate apart from each other. The first insulating layer is disposed on the substrate between the source/drain regions. The charge storage layer is disposed on the first insulating layer. The second insulating layer is disposed on the charge storage layer, and a thickness of a peripheral region of the second insulating layer is greater than a thickness of an internal region of the second insulating layer. The conductive layer is disposed on the second insulating layer.

1 . A non-volatile memory, comprising:
 a substrate;   a first insulating layer disposed over the substrate and disposed between two source/drain regions;   a second insulationg layer provided with a peripheral region and a internal region;   a charge storage layer disposed between the first insulating layer and the second insulationg layer, wherein the peripheral region of the second insulating layer is thicker than the internal region of the second insulating layer; and   a conductive layer disposed over the second insulating layer.   
   
   
       2 . The non-volatile memory as claimed in  claim 1 , wherein the thickness of the internal region of the second insulating layer ranges from 80 angstrom to 100 angstrom, while the thickness of the peripheral region of the second insulating layer ranges from 90 angstrom to 120 angstrom. 
   
   
       3 . The non-volatile memory as claimed in  claim 1 , wherein a thickness of the first insulating layer ranges from 50 angstrom to 60 angstrom. 
   
   
       4 . The non-volatile memory as claimed in  claim 1 , wherein a thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom. 
   
   
       5 . The non-volatile memory as claimed in  claim 1 , wherein the first insulating layer is a oxide layer that comprising silicon oxide. 
   
   
       6 . The non-volatile memory as claimed in  claim 1 , wherein the charge storage layer is a dielectric material. 
   
   
       7 . The non-volatile memory as claimed in  claim 6 , wherein the dielectric material providing charge trapping ability. 
   
   
       8 . The non-volatile memory as claimed in  claim 6 , wherein the dielectric material is nitride material that comprising silicon nitride. 
   
   
       9 . The non-volatile memory as claimed in  claim 1 , wherein the second insulating layer is a oxide layer that comprising silicon oxide. 
   
   
       10 . A method for fabricating a non-volatile memory, the method comprising:
 providing a substrate;   forming a first insulating layer over the substrate and disposed between two source/drain regions;   providing a second insulationg layer having a peripheral region and a internal region;   forming a charge storage layer between the first insulating layer and the second insulationg layer, wherein the peripheral region of the second insulating layer is thicker than the internal region of the second insulating layer; and   forming a conductive layer over the second insulating layer.   
   
   
       11 . The method for fabricating the non-volatile memory as claimed in  claim 10 , wherein the thickness of the internal region of the second insulating layer ranges from 80 angstrom to 100 angstrom, while the thickness of the peripheral region of the second insulating layer ranges from 90 angstrom to 120 angstrom. 
   
   
       12 . The method for fabricating the non-volatile memory as claimed in  claim 10 , wherein a thickness of the first insulating layer ranges from 50 angstrom to 60 angstrom. 
   
   
       13 . The method for fabricating the non-volatile memory as claimed in  claim 10 , wherein a thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom. 
   
   
       14 . The method for fabricating the non-volatile memory as claimed in  claim 10 , wherein the charge storage layer is a dielectric material and the dielectric material providing charge trapping ability. 
   
   
       15 . The method for fabricating the non-volatile memory as claimed in  claim 14 , wherein the dielectric material is nitride material that comprising silicon nitride. 
   
   
       16 . A method for fabricating a non-volatile memory, the method comprising:
 forming a stacked structure and a cosuming layer in sequence over a substrate;   performing a converting process at a peripheral region of the consuming layer to form a first insulating layer;   removing the consuming layer; and   forming a conductive layer over the stacked layer and the first insulating layer.   
   
   
       17 . The method for fabricating the non-volatile memory as claimed in  claim 16 , wherein the stacked structure comprises a second insulating layer, a charge storage layer, and a third insulating layer formed in sequence over the substrate. 
   
   
       18 . The method for fabricating the non-volatile memory as claimed in  claim 17 , wherein a thickness of the third insulating layer ranges from 80 angstrom to 100 angstrom, while a thickness of the first insulating layer ranges from 10 angstrom to 20 angstrom. 
   
   
       19 . The method for fabricating the non-volatile memory as claimed in  claim 17 , wherein a thickness of the second insulating layer ranges from 50 angstrom to 60 angstrom. 
   
   
       20 . The method for fabricating the non-volatile memory as claimed in  claim 17 , wherein a thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom. 
   
   
       21 . The method for fabricating the non-volatile memory as claimed in  claim 17 , wherein the charge storage layer is a dielectric material and the dielectric material providing charge trapping ability. 
   
   
       22 . The method for fabricating the non-volatile memory as claimed in  claim 17 , wherein the dielectric material is nitride material that comprising silicon nitride. 
   
   
       23 . The method for fabricating the non-volatile memory as claimed in  claim 16 , wherein the converting process is an oxidation process.