Inventor · disambiguated record
Ravindranath Droopad
Also filed as: DROOPAD RAVINDRANATH
38 granted patents·35 pending applications·2,246 citations·filing 1998–2011
98Inventor score
Top patents by PatentIndex Score
73 records- 0199US6709989B2Method for fabricating a semiconductor structure including a metal oxide interface with siliconMOTOROLA INC·Filed 2001·Granted Mar 23, 2004·686 cites·6 claims
- 0298US6501121B1Semiconductor structureMOTOROLA INC·Filed 2000·Granted Dec 31, 2002·232 cites·22 claims
- 0398US6493497B1Electro-optic structure and process for fabricating sameMOTOROLA INC·Filed 2000·Granted Dec 10, 2002·238 cites·45 claims
- 0495US6673646B2Growth of compound semiconductor structures on patterned oxide films and process for fabricating sameMOTOROLA INC·Filed 2001·Granted Jan 6, 2004·103 cites·18 claims
- 0595US6392257B1Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the sameMOTOROLA INC·Filed 2000·Granted May 21, 2002·165 cites·6 claims
- 0694US6291319B1Method for fabricating a semiconductor structure having a stable crystalline interface with siliconMOTOROLA INC·Filed 1999·Granted Sep 18, 2001·148 cites·40 claims
- 0791US6555946B1Acoustic wave device and process for forming the sameMOTOROLA INC·Filed 2000·Granted Apr 29, 2003·54 cites·26 claims
- 0888US7067856B2Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 27, 2006·26 cites·9 claims
- 0988US7005717B2Semiconductor device and methodFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Feb 28, 2006·41 cites·20 claims
- 1088US6432546B1Microelectronic piezoelectric structure and method of forming the sameMOTOROLA INC·Filed 2000·Granted Aug 13, 2002·43 cites·16 claims
- 1188US6319730B1Method of fabricating a semiconductor structure including a metal oxide interfaceMOTOROLA INC·Filed 1999·Granted Nov 20, 2001·94 cites·23 claims
- 1286US6241821B1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 1999·Granted Jun 5, 2001·45 cites·22 claims
- 1386US6022410AAlkaline-earth metal silicides on siliconMOTOROLA INC·Filed 1998·Granted Feb 8, 2000·53 cites·22 claims
- 1485US6224669B1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 2000·Granted May 1, 2001·35 cites·36 claims
- 1581US7105866B2Heterojunction tunneling diodes and process for fabricating sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Sep 12, 2006·24 cites·8 claims
- 1681US6482538B2Microelectronic piezoelectric structure and method of forming the sameMOTOROLA INC·Filed 2001·Granted Nov 19, 2002·25 cites·14 claims
- 1780US6916717B2Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrateMOTOROLA INC·Filed 2002·Granted Jul 12, 2005·27 cites·25 claims
- 1877US6472276B1Using silicate layers for composite semiconductorMOTOROLA INC·Filed 2001·Granted Oct 29, 2002·20 cites·22 claims
- 1976US6590236B1Semiconductor structure for use with high-frequency signalsMOTOROLA INC·Filed 2000·Granted Jul 8, 2003·20 cites·59 claims
- 2076US6270568B1Method for fabricating a semiconductor structure with reduced leakage current densityMOTOROLA INC·Filed 1999·Granted Aug 7, 2001·44 cites·18 claims
- 2173US6885065B2Ferromagnetic semiconductor structure and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Apr 26, 2005·16 cites·15 claims
- 2273US6693298B2Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form sameMOTOROLA INC·Filed 2001·Granted Feb 17, 2004·16 cites·22 claims
- 2373US6667196B2Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the methodMOTOROLA INC·Filed 2001·Granted Dec 23, 2003·16 cites·41 claims
- 2471US7442654B2Method of forming an oxide layer on a compound semiconductor structureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 28, 2008·3 cites·22 claims
- 2570US7692224B2MOSFET structure and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 6, 2010·4 cites·20 claims
- 2669US7105886B2High K dielectric filmFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Sep 12, 2006·11 cites·12 claims
- 2764US7045815B2Semiconductor structure exhibiting reduced leakage current and method of fabricating sameFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 16, 2006·11 cites·11 claims
- 2863US6890816B2Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devicesFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted May 10, 2005·9 cites·6 claims
- 2958US7169619B2Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich processFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jan 30, 2007·6 cites·8 claims
- 3056US6693033B2Method of removing an amorphous oxide from a monocrystalline surfaceMOTOROLA INC·Filed 2001·Granted Feb 17, 2004·6 cites·29 claims
- 3156US6159834AMethod of forming a gate quality oxide-compound semiconductor structureMOTOROLA INC·Filed 1998·Granted Dec 12, 2000·20 cites·27 claims
- 3248US8105925B2Method for forming an insulated gate field effect deviceABROKWAH JONATHAN K·Filed 2008·Granted Jan 31, 2012·0 cites·16 claims
- 3346US8847280B2Insulated gate field effect transistorsABROKWAH JONATHAN K·Filed 2011·Granted Sep 30, 2014·0 cites·19 claims
- 3445US7799647B2MOSFET device featuring a superlattice barrier layer and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Sep 21, 2010·0 cites·8 claims
- 3545US6806202B2Method of removing silicon oxide from a surface of a substrateMOTOROLA INC·Filed 2002·Granted Oct 19, 2004·1 cites·3 claims
- 3643US2004232525A1Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the sameMOTOROLA INC·Filed 2004·Application pending·0 cites
- 3742US2002047143A1Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 3842US2002047123A1Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 3942US2007082505A1Method of forming an electrically insulating layer on a compound semiconductorFREESCALE SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 4042US2001023660A1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 2001·Application pending·0 cites
- 4140US7682912B2III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 23, 2010·0 cites·19 claims
- 4240US6750067B2Microelectronic piezoelectric structure and method of forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jun 15, 2004·0 cites·11 claims
- 4340US2002074624A1Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the sameMOTOROLA INC·Filed 2002·Application pending·0 cites
- 4440US2007090405A1Charge compensated dielectric layer structure and method of making the samePASSLACK MATTHIAS·Filed 2005·Application pending·0 cites
- 4538US2007148879A1III-V compound semiconductor heterostructure MOSFET with a high workfunction metal gate electrode and process of making the samePASSLACK MATTHIAS·Filed 2005·Application pending·0 cites
- 4638US2002195057A1Apparatus for fabricating semiconductor structures and method of forming the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 4737US2003082833A1Method for fabricating semiconductor structures utilizing the formation of a compliant substrateMOTOROLA INC·Filed 2001·Application pending·0 cites
- 4837US2002146895A1Method for fabricating a semiconductor structure including a metal oxide interface with siliconMOTOROLA INC·Filed 2002·Application pending·0 cites
- 4937US2003012965A1Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate comprising an oxygen-doped compound semiconductor layerMOTOROLA INC·Filed 2001·Application pending·0 cites
- 5036US2002195599A1Low-defect semiconductor structure, device including the structure and method for fabricating structure and deviceMOTOROLA INC·Filed 2001·Application pending·0 cites
Showing the top 50 of 73 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →