Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

Abstract

High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

1 . A semiconductor structure comprising: 
 a monocrystalline oxide material; and    a monocrystalline compound semiconductor material of first type formed overlying the monocrystalline oxide material.    
     
     
         2 . The semiconductor structure of  claim 1  further comprising a template layer formed between the monocrystalline oxide material and the monocrystalline compound semiconductor material of first type.  
     
     
         3 . The semiconductor structure of  claim 1  further comprising a buffer layer of monocrystalline semiconductor material of second type formed between the monocrystalline oxide material and the monocrystalline compound semiconductor material of first type.  
     
     
         4 . The semiconductor structure of  claim 3  further comprising a template layer formed between the monocrystalline oxide material and the buffer layer of monocrystalline semiconductor material of second type.  
     
     
         5 . The semiconductor structure of  claim 3  wherein the buffer layer comprises a monocrystalline semiconductor material selected from the group consisting of: Germanium, a GaAs x P 1−x  superlattice, an In y Ga 1−y P superlattice, and an InGaAs superlattice.  
     
     
         6 . The semiconductor structure of  claim 1  wherein the monocrystalline oxide material comprises an oxide selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin based perovskites, lanthanum aluminate, lanthanum scandium oxide and gadolinium oxide.  
     
     
         7 . The semiconductor structure of  claim 1  wherein the monocrystalline oxide material comprises Sr z Ba 1−z TiO 3  wherein z ranges from 0 to 1.  
     
     
         8 . The semiconductor structure of  claim 1  wherein the monocrystalline oxide material comprises a perovskite oxide.  
     
     
         9 . The semiconductor structure of  claim 1  wherein the monocrystalline compound semiconductor material comprises a material selected from the group consisting of: III-V compounds, mixed III-V compounds, II-VI compounds, and mixed II-VI compounds.  
     
     
         10 . The semiconductor structure of  claim 1  wherein the monocrystalline compound semiconductor material comprises a material selected from the group consisting of: GaAs, AlGaAs, InP, InGaAs, InGaP, ZnSe, AlInAs, CdS, CdHgTe, and ZnSeS.  
     
     
         11 . A semiconductor structure comprising: 
 a monocrystalline oxide material having a first characteristic; and    a monocrystalline compound semiconductor material having a second characteristic grown on the monocrystalline oxide material; and    wherein the first and second characteristics relate to each other in a manner selected from the group consisting of: 
 the first and second characteristics are lattice constants and the first and second characteristics are substantially matched; and  
 the first and second characteristics are related to crystal orientation of the monocrystalline oxide material and the monocrystalline compound semiconductor material and wherein the crystal orientations are rotated with respect to each other.  
   
     
     
         12 . The semiconductor structure of  claim 11  wherein the monocrystalline compound semiconductor material comprises a material selected from the group consisting of: GaAs, AlGaAs, InP, InGaAs, InGaP, ZnSe, and ZnSeS.  
     
     
         13 . The semiconductor structure of  claim 11  wherein the monocrystalline oxide material comprises an oxide selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin based perovskites, lanthanum aluminate, lanthanum scandium oxide and gadolinium oxide.  
     
     
         14 . The semiconductor structure of  claim 11  wherein the monocrystalline oxide material comprises Sr z Ba 1−z TiO 3  wherein z ranges from 0 to 1.  
     
     
         15 . The semiconductor structure of  claim 11  wherein the crystal orientations are rotated by 45 degrees with respect to each other.  
     
     
         16 . A semiconductor structure comprising: 
 a monocrystalline semiconductor substrate;    an amorphous layer overlying the monocrystalline semiconductor substrate;    a monocrystalline oxide layer overlying the amorphous layer; and    a monocrystalline compound semiconductor layer overlying the monocrystalline oxide layer.    
     
     
         17 . The semiconductor structure of  claim 16  wherein the monocrystalline semiconductor substrate comprises a layer of a material comprising silicon.  
     
     
         18 . The semiconductor structure of  claim 17  wherein the amorphous layer comprises a silicon oxide.  
     
     
         19 . The semiconductor structure of  claim 16  further comprising a template layer between the monocrystalline oxide layer and the monocrystalline compound semiconductor layer.  
     
     
         20 . The semiconductor structure of  claim 19  further comprising a buffer layer between the template layer and the monocrystalline compound semiconductor layer.  
     
     
         21 . The semiconductor structure of  claim 16  further comprising a buffer layer between the monocrystalline oxide layer and the monocrystalline compound semiconductor layer.  
     
     
         22 . The semiconductor structure of  claim 21  wherein the buffer layer comprises a layer of semiconductor material.  
     
     
         23 . The semiconductor structure of  claim 16  wherein the monocrystalline oxide material comprises Sr z Ba 1−z TiO 3  wherein z ranges from 0 to 1.  
     
     
         24 . The semiconductor structure of  claim 16  wherein the monocrystalline compound semiconductor material comprises a material selected from the group consisting of: GaAs, AlGaAs, InP, InGaAs, InGaP, ZnSe, and ZnSeS.  
     
     
         25 . A semiconductor structure comprising: 
 a monocrystalline substrate characterized by a first lattice constant;    a monocrystalline insulator layer having a second lattice constant different than the first lattice constant overlying the monocrystalline substrate; and    a monocrystalline compound semiconductor layer having a third lattice constant different than the first lattice constant overlying the monocrystalline insulator layer.    
     
     
         26 . The semiconductor structure of  claim 25  wherein the third lattice constant is different from the second lattice constant.  
     
     
         27 . The semiconductor structure of  claim 25  further comprising an amorphous oxide layer between the monocrystalline substrate and the monocrystalline insulator layer.  
     
     
         28 . The semiconductor structure of  claim 27  wherein the amorphous oxide layer has a thickness sufficient to relieve strain in the monocrystalline insulator layer.  
     
     
         29 . The semiconductor structure of  claim 25  further comprising a template layer between the monocrystalline insulator layer and the monocrystalline compound semiconductor layer.  
     
     
         30 . The semiconductor structure of  claim 25  further comprising a buffer layer between the monocrystalline insulator layer and the monocrystalline compound semiconductor layer.  
     
     
         31 . The semiconductor structure of  claim 25  wherein the monocrystalline substrate is characterized by a first crystalline orientation and the monocrystalline insulator layer is characterized by a second crystalline orientation and wherein the second crystalline orientation is rotated with respect to the first crystalline orientation.  
     
     
         32 . The semiconductor structure of  claim 25  wherein the monocrystalline substrate comprises silicon.  
     
     
         33 . The semiconductor structure of  claim 25  wherein the monocrystalline substrate comprises a material comprising silicon, the monocrystalline insulator comprises an alkaline earth metal titanate and the monocrystalline compound semiconductor material comprises a material selected from the group consisting of: GaAs, AlGaAs, ZnSe, and ZnSeS.  
     
     
         34 . The semiconductor structure of  claim 33  wherein the monocrystalline insulator layer comprises Sr z Ba 1−z TiO 3  where z ranges from 0 to 1.  
     
     
         35 . The semiconductor structure of  claim 25  wherein the monocrystalline insulator comprises an oxide selected from the group consisting of alkaline earth metal zirconates, and alkaline earth metal hafnates and the monocrystalline compound semiconductor layer comprises a material selected from the group consisting of: InP and InGaP.  
     
     
         36 . A semiconductor structure comprising: 
 a monocrystalline substrate characterized by a first lattice constant;    a monocrystalline nitride layer having a second lattice constant different than the first lattice constant overlying the monocrystalline substrate; and    a monocrystalline compound semiconductor layer having a third lattice constant different than the first and second lattice constants overlying the monocrystalline nitride layer.    
     
     
         37 . The semiconductor structure of  claim 36  wherein the monocrystalline nitride comprises a material selected from the group consisting of gallium nitride, aluminum nitride and boron nitride.  
     
     
         38 . A semiconductor structure comprising: 
 a first monocrystalline semiconductor substrate comprising silicon and having a first region and a second region;    an intermediate layer comprising a silicon oxide overlying the first region;    a first monocrystalline oxide layer overlying the intermediate layer;    a second monocrystalline semiconductor layer overlying the first monocrystalline oxide layer;    a second monocrystalline oxide layer overlying the second monocrystalline semiconductor layer; and    a third monocrystalline semiconductor layer overlying the second monocrystalline oxide layer and wherein at least one of the second monocrystalline semiconductor layer and the third semiconductor layer comprises a compound semiconductor material.    
     
     
         39 . The semiconductor structure of  claim 38  further comprising a template layer between the first monocrystalline oxide layer and the second monocrystalline semiconductor layer.  
     
     
         40 . The semiconductor structure of  claim 38  further comprising an active semiconductor component positioned at least partially in the second region.  
     
     
         41 . The semiconductor structure of  claim 40  further comprising a second semiconductor component positioned at least partially in the second monocrystalline semiconductor layer.  
     
     
         42 . The semiconductor structure of  claim 41  wherein the second monocrystalline oxide layer comprises a gate dielectric of the second semiconductor component.  
     
     
         43 . The semiconductor structure of  claim 41  further comprising an electrical interconnection between the active semiconductor component and the second semiconductor component.  
     
     
         44 . The semiconductor structure of  claim 41  wherein the second monocrystalline semiconductor layer comprises a group III-V compound and the second semiconductor component comprises a component in a radio frequency amplifier.  
     
     
         45 . A semiconductor device comprising: 
 a first monocrystalline semiconductor layer comprising a first region and a second region;    an electrical semiconductor component positioned at least partially within the first region;    a second monocrystalline compound semiconductor layer overlying the second region; and    a second semiconductor component positioned at least partially within the second monocrystalline compound semiconductor layer.    
     
     
         46 . The semiconductor device of  claim 45  further comprising a monocrystalline oxide layer positioned between the first region and the second monocrystalline compound semiconductor region.  
     
     
         47 . The semiconductor device of  claim 46  further comprising an electrical interconnection between the active semiconductor component and the second semiconductor component.  
     
     
         48 . The semiconductor device of  claim 46  wherein the first monocrystalline semiconductor layer comprises silicon and the monocrystalline oxide layer comprises a material selected from the group consisting of: alkaline earth metal titanates, alkaline earth metal zirconates, and alkaline earth metal hafnates.  
     
     
         49 . The semiconductor device of  claim 45  further comprising an electrical interconnection between the active semiconductor component and the second semiconductor component.  
     
     
         50 . A process for fabricating a semiconductor structure comprising the steps of: 
 providing a monocrystalline semiconductor substrate comprising silicon;    epitaxially growing a monocrystalline oxide layer overlying the monocrystalline substrate;    oxidizing the monocrystalline semiconductor substrate during the step of epitaxially growing to form a silicon oxide layer between the monocrystalline semiconductor substrate and the monocrystalline oxide layer;    epitaxially growing a monocrystalline compound semiconductor layer overlying the monocrystalline oxide layer.    
     
     
         51 . The process of  claim 50  further comprising the step of forming a first template layer on the monocrystalline semiconductor substrate.  
     
     
         52 . The process of  claim 51  wherein the step of providing a monocrystalline semiconductor substrate comprises providing a substrate having a silicon oxide layer on a surface thereof and the step of forming a first template layer comprises the steps of: 
 depositing a material selected from the group consisting of barium and strontium onto the silicon oxide layer and  
 heating the substrate to react the material with the silicon oxide.  
 
     
     
         53 . The process of  claim 51  wherein the step of providing a monocrystalline semiconductor substrate comprises providing a substrate having a silicon oxide layer on a surface thereof and the step of forming a first template layer comprises the steps of: 
 depositing strontium and oxygen onto the silicon oxide layer and  
 heating the substrate to react the strontium and oxygen with the silicon oxide.  
 
     
     
         54 . The process of  claim 50  wherein the step of epitaxially growing a monocrystalline oxide layer comprises the steps of: 
 heating the substrate to a temperature between about 400° C. and about 600° C.; and  
 introducing reactants comprising strontium, titanium, and oxygen.  
 
     
     
         55 . The process of  claim 54  wherein the step of introducing comprises controlling the ratio of strontium to titanium and controlling partial pressure of oxygen.  
     
     
         56 . The process of  claim 55  wherein the step of oxidizing the monocrystalline semiconductor substrate comprises increasing the partial pressure of oxygen above a level necessary for epitaxially growing the monocrystalline oxide layer.  
     
     
         57 . The process of  claim 50  further comprising the step of forming a second template layer overlying the monocrystalline oxide layer.  
     
     
         58 . The process of  claim 57  wherein the step of forming a second template layer comprises the step of capping the monocrystalline oxide layer with a layer comprising a monolayer of a material selected from the group consisting of titanium, titanium and oxygen, strontium, and strontium and oxygen.  
     
     
         59 . The process of  claim 58  wherein the step of epitaxially growing a monocrystalline compound semiconductor layer comprises: 
 depositing arsenic on the second template layer; and  
 reacting the arsenic with the material of the second template layer.  
 
     
     
         60 . The process of  claim 59  wherein the step of epitaxially growing a monocrystalline compound semiconductor layer further comprises the steps of deposing gallium and arsenic after the step of reacting.  
     
     
         61 . The process of  claim 57  further comprising the step of forming a buffer layer overlying the second template layer.  
     
     
         62 . The process of  claim 50  further comprising the step of forming a buffer layer overlying the monocrystalline oxide layer.  
     
     
         63 . The process of  claim 62  wherein the process of forming a buffer layer comprises the step of epitaxially depositing a layer of germanium overlying the monocrystalline oxide layer.  
     
     
         64 . The process of  claim 62  wherein the process of forming a buffer layer comprises the step of depositing a superlattice comprising a III-V group compound semiconductor material.  
     
     
         65 . The process of  claim 50  wherein the step of epitaxially growing a monocrystalline oxide layer comprises the step of epitaxially growing an alkaline earth metal titanate.  
     
     
         66 . The process of  claim 65  wherein the step of epitaxially growing a monocrystalline compound semiconductor layer comprises the step of epitaxially growing a layer from the group consisting of the GaAs, AlGaAs, ZnSe, and ZnSSe.  
     
     
         67 . The process of  claim 50  wherein the step of epitaxially growing a monocrystalline oxide layer comprises the step of epitaxially growing an oxide from the group consisting of the alkaline earth metal zirconates and the alkaline earth metal hafnates.  
     
     
         68 . The process of  claim 67  wherein the step of epitaxially growing a monocrystalline compound semiconductor layer comprises the step of epitaxially growing a monocrystalline layer of compound semiconductor material selected from the group consisting of InP and InGaAs.  
     
     
         69 . The process of  claim 68  further comprising the step of forming a second template layer overlying the monocrystalline oxide layer by depositing a layer having a thickness of about 1-10 monolayers of a material selected from the group consisting of Zr—As, Zr—P, Hf—As, Hf—P, Sr—O—As, Sr—O—P, Sr—As, Sr—P, Ba—O—As, Ba—O—P, Ba—As, Sr—Ga—O, Ba—Ga—O, and Ba—P.  
     
     
         70 . The process of  claim 50  wherein the step of epitaxially growing a monocrystalline oxide layer comprises epitaxially growing at a growth rate of about 0.3-0.5 nm per minute.  
     
     
         71 . A process for fabricating a semiconductor structure comprising the steps of: 
 providing a monocrystalline semiconductor substrate;    epitaxially growing a monocrystalline oxide layer overlying the monocrystalline substrate;    oxidizing the monocrystalline semiconductor substrate during the step of epitaxially growing to form a silicon oxide layer between the monocrystalline semiconductor substrate and the monocrystalline oxide layer;    epitaxially growing a monocrystalline compound semiconductor layer overlying the monocrystalline oxide layer.    
     
     
         72 . A process for fabricating a semiconductor structure comprising the steps of: 
 providing a monocrystalline oxide layer having a surface;    forming a template layer on the surface; and    epitaxially growing a monocrystalline compound semiconductor layer overlying the template.    
     
     
         73 . The process of  claim 72  wherein the step of providing a monocrystalline oxide layer comprises providing a monocrystalline oxide layer comprising a material selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, and alkaline earth metal hafnates.  
     
     
         74 . The process of  claim 72  wherein the step of providing a monocrystalline oxide layer comprises epitaxially growing a monocrystalline oxide layer lattice matched to an underlying monocrystalline silicon substrate.  
     
     
         75 . The process of  claim 72  wherein the step of providing a monocrystalline oxide layer comprises providing an oxide layer comprising Sr z Ba 1−z TiO 3  where z ranges from 0 to 1.  
     
     
         76 . The process of  claim 75  wherein the step of forming a template layer comprises capping the oxide layer with 1-10 monolayers of a material selected from Ti, TiO, Sr, and SrO.  
     
     
         77 . The process of  claim 76  wherein the step of epitaxially growing a monocrystalline compound semiconductor layer comprises epitaxially depositing a layer selected from GaAs, AlGaAs, GaAsP, and GaInP.  
     
     
         78 . The process of  claim 76  further comprises the step of depositing a buffer layer overlying the template layer.  
     
     
         79 . The process of  claim 78  wherein the step of depositing a buffer layer comprises epitaxially depositing a superlattice layer of a material selected from GaAs x P 1−x  where x ranges from 0 to 1 and In y Ga 1−y P where y ranges from 0 to 1.  
     
     
         80 . The process of  claim 79  wherein the step of epitaxially growing a monocrystalline compound semiconductor layer comprises epitaxially depositing a layer selected from GaAs, AlGaAs, GaAsP, GaInAs, InP and GaInP.  
     
     
         81 . The process of  claim 75  wherein the step of forming a template layer comprises capping the monocrystalline oxide layer with 1-10 monolayers of a material selected from Ge—Sr and Ge—Ti.  
     
     
         82 . The process of  claim 81  further comprising the step of epitaxially depositing a buffer layer of germanium.  
     
     
         83 . The process of  claim 75  wherein the step of forming a template layer comprises the steps of: 
 capping the monocrystalline oxide layer with 1-10 monolayers of ZnO; and  
 depositing 1-3 monolayers of zinc rich ZnO overlying the monolayers of ZnO.  
 
     
     
         84 . The process of  claim 83  wherein the step of epitaxially growing a monocrystalline compound semiconductor layer comprises epitaxially growing a layer selected from ZnSe and ZnSeS.  
     
     
         85 . The process of  claim 75  wherein the step of forming a template layer comprises the step of capping the monocrystalline oxide layer with 1-2 monolayers of SrS.  
     
     
         86 . The process of  claim 85  wherein the step of epitaxially growing a monocrystalline compound semiconductor layer comprises epitaxially growing a layer of ZnSeS.  
     
     
         87 . The process of  claim 72  wherein the step of providing a monocrystalline oxide layer comprises providing a monocrystalline oxide layer comprising a material selected from the group consisting of alkaline earth metal zirconates, and alkaline earth metal hafnates.  
     
     
         88 . The process of  claim 87  wherein the process of forming a template layer comprises capping the monocrystalline oxide layer with 1-10 monolayers of a material selected from Zr—As, Zr—P, Hf—As, Hf—P, Sr—As, Sr—O—As, Sr—P, Sr—O—P, Ba—As, Ba—O—As, Ba—P, Sr—Ga—O, Ba—Ga—O, and Ba—O—P.  
     
     
         89 . The process of  claim 88  wherein the step of epitaxially growing a monocrystalline compound semiconductor layer comprises epitaxially growing a layer comprising a material selected from InP and InGaAs.  
     
     
         90 . The process of  claim 89  further comprising a buffer layer comprising a superlattice comprising InGaAs where indium ranges from 0 to about 47% deposited overlying the template.  
     
     
         91 . A process for fabricating a semiconductor structure comprising the steps of: 
 providing a monocrystalline semiconductor substrate;    forming an accommodating buffer layer overlying the monocrystalline semiconductor substrate;    forming an amorphous intermediate layer between the monocrystalline semiconductor substrate and the accommodating buffer layer; and    epitaxially growing a monocrystalline compound semiconductor layer overlying the accommodating buffer layer.    
     
     
         92 . The process of  claim 91  wherein the step of forming an amorphous intermediate layer comprises the step of diffusing oxygen through the accommodating buffer layer to oxidize the monocrystalline semiconductor substrate.  
     
     
         93 . The process of  claim 91  wherein the step of forming an accommodating buffer layer comprises growing an epitaxial layer by a process selected from MBE, MOCVD, MEE, and ALE.  
     
     
         94 . The process of  claim 91  wherein the step of providing a monocrystalline semiconductor substrate comprises providing a monocrystalline silicon substrate having a silicon oxide layer on a surface thereof.  
     
     
         95 . The process of  claim 94  wherein the step of forming an accommodating buffer layer comprises the steps of: 
 reacting a material selected from Sr and SrO with the silicon oxide layer to form a template on the silicon substrate surface; and  
 epitaxially deposing a layer comprising Sr z Ba 1−z TiO 3  wherein z ranges from 0 to 1 on the template.  
 
     
     
         96 . The process of  claim 91  further comprising the step of forming a template overlying the accommodating buffer layer prior to the step of epitaxially growing.  
     
     
         97 . A process for fabricating a semiconductor structure comprising the steps of: 
 providing a monocrystalline silicon substrate comprising a first region and a second region, the second region having an oxidized surface;    forming a CMOS circuit in the first region;    depositing a material comprising strontium onto the second region having an oxidized surface and reacting the material with the oxidized surface to form a first template layer;    depositing a monocrystalline oxide layer comprising strontium, titanium and oxygen overlying the first template layer by introducing strontium, titanium, and a partial pressure of oxygen to the template layer;    increasing the partial pressure of oxygen to grow an amorphous layer of silicon oxide on the second region;    terminating the step of depositing a monocrystalline oxide layer by depositing a second template layer comprising a monolayer comprising titanium;    depositing a layer of a monocrystalline compound semiconductor material comprising gallium and arsenic overlying the second template layer;    forming a semiconductor component in the layer of a monocrystalline compound semiconductor material; and    depositing a metallic conductor configured to electrically couple the CMOS circuit and the semiconductor component.    
     
     
         98 . A semiconductor structure comprising: 
 a monocrystalline semiconductor substrate;    a monocrystalline oxide layer comprising Sr z Ba 1−z TiO 3  overlying the monocrystalline semiconductor substrate, wherein z ranges from 0 to 1; and    an amorphous layer positioned between the monocrystalline semiconductor substrate and the monocrystalline oxide layer.    
     
     
         99 . The semiconductor structure of  claim 89  wherein the monocrystalline semiconductor substrate comprises a Group IV element.  
     
     
         100 . The semiconductor structure of  claim 98  wherein the monocrystalline oxide layer has a thickness greater than 20 nm.  
     
     
         101 . The semiconductor structure of  claim 98  wherein the amorphous layer comprises silicon oxide and has a thickness sufficient to relieve strain in the monocrystalline oxide layer.  
     
     
         102 . The semiconductor structure of  claim 98  wherein the amorphous layer comprises silicon oxide and has a thickness greater than 1.0 nm.  
     
     
         103 . The semiconductor structure of  claim 98  wherein the amorphous layer comprises silicon oxide and has a thickness of 0.5 to 2.5 nm.  
     
     
         104 . A communicating device including an integrated circuit, wherein the integrated circuit comprises: 
 an accommodating buffer layer;    a compound semiconductor portion overlying the accommodating buffer layer, wherein the compound semiconductor portion includes a feature selected from a group consisting of an amplifier, a modulating circuit, and a demodulating circuit; and    a Group IV semiconductor portion including a digital logic portion coupled to the feature.    
     
     
         105 . The communicating device of  claim 104 , wherein the compound semiconductor portion has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the accommodating buffer layer.  
     
     
         106 . The communicating device of  claim 105 , wherein: 
 the integrated circuit further comprises a monocrystalline Group IV substrate underlying the compound semiconductor portion; and    the accommodating buffer layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the monocrystalline Group IV substrate.    
     
     
         107 . The communicating device of  claim 106 , wherein the accommodating buffer layer and the compound semiconductor portion have a lattice mismatch no greater than approximately 2.0% and a thickness of the compound semiconductor portion is at least approximately 20 nm.  
     
     
         108 . The communicating device of  claim 104 , wherein the integrated circuit has a feature selected from a group consisting of: 
 the accommodating buffer layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the compound semiconductor portion; and    the accommodating buffer layer and the compound semiconductor portion have a lattice mismatch no greater than approximately 2.0% and a thickness of the compound semiconductor portion is at least approximately 20 nm.    
     
     
         109 . The communicating device of  claim 104 , wherein the integrated circuit further comprises a monocrystalline Group IV substrate underlying the monocrystalline compound semiconductor portion, wherein: 
 the accommodating buffer layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the monocrystalline Group IV substrate; and    the accommodating buffer layer and the compound semiconductor portion have a lattice mismatch no greater than approximately 2.0% and a thickness of the compound semiconductor portion is at least approximately 20 nm.    
     
     
         110 . The communicating device of  claim 104 , wherein the accommodating buffer layer and the compound semiconductor portion have a lattice mismatch no greater than approximately 2.0% and a thickness of the compound semiconductor portion is at least approximately 20 nm.  
     
     
         111 . A communicating device including: 
 a signal transceiving means;    an integrated circuit including: 
 a compound semiconductor portion having an amplifier coupled to the signal transceiving means;  
 a Group IV semiconductor portion having a digital signal processing means coupled to the amplifier; and  
   a unit coupled to the integrated circuit.    
     
     
         112 . The communicating device of  claim 111 , wherein the communicating device includes a portable telephone.  
     
     
         113 . The communicating device of  claim 111 , wherein the communicating device is a cellular telephone.  
     
     
         114 . The communicating device of  claim 111 , wherein the Group IV Semiconductor portion includes a converter selected from a group selected from a digital-to-analog converter and an analog-to-digital converter, wherein the converter is coupled to the unit.  
     
     
         115 . The communicating device of  claim 111 , wherein the unit is selected from a group consisting of keyboard, a microphone, a speaker, a visual display, and a memory means.  
     
     
         116 . The communicating device of  claim 111 , wherein: 
 the Group IV semiconductor portion includes a bipolar portion and a field-effect portion; and    the bipolar portion includes a signal modulating means coupled to the digital signal processing means and the amplifier.    
     
     
         117 . The communicating device of  claim 111 , wherein the compound semiconductor portion further includes a signal modulating means.  
     
     
         118 . The communicating device of  claim 111 , wherein: 
 the signal transceiving means includes an antenna;    the amplifier is a Group III-V semiconductor power amplifier;    the integrated circuit includes a bipolar portion having a radio frequency to intermediate frequency mixer coupled to the Group III-V semiconductor power amplifier and the digital signal processing means;    the unit includes a microphone; and    the communicating device further includes a speaker.    
     
     
         119 . An integrated circuit comprising: 
 a monocrystalline Group IV semiconductor substrate;    a compound semiconductor portion including a laser overlying the monocrystalline Group IV semiconductor substrate; and    a Group IV semiconductor portion including an electrical component coupled to the laser, wherein the Group IV semiconductor portion lies within or over the monocrystalline Group IV semiconductor substrate.    
     
     
         120 . The integrated circuit of  claim 119 , further comprising a waveguide, wherein the waveguide is coupled to the laser and to the electrical component.  
     
     
         121 . The integrated circuit of  claim 119 , wherein the electrical component is a transistor.  
     
     
         122 . The integrated circuit of  claim 119 , wherein the Group IV semiconductor portion includes CMOS transistors, of which, the electrical component is one of the CMOS transistors.  
     
     
         123 . The integrated circuit of  claim 119 , further comprising an accommodating buffer layer lying between the monocrystalline Group IV semiconductor substrate and the compound semiconductor portion.  
     
     
         124 . The integrated circuit of  claim 123 , further comprising a waveguide, wherein the waveguide is coupled to the laser and the electrical component, and wherein the waveguide comprises at least a portion of the accommodating buffer layer.  
     
     
         125 . The integrated circuit of  claim 123 , wherein the compound semiconductor portion has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the accommodating buffer layer.  
     
     
         126 . The integrated circuit of  claim 125 , wherein the accommodating buffer layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the monocrystalline Group IV semiconductor substrate.  
     
     
         127 . The integrated circuit of  claim 123 , wherein the integrated circuit has a feature selected from a group consisting of: 
 the accommodating buffer layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the monocrystalline Group IV semiconductor substrate; and    the accommodating buffer layer and the compound semiconductor portion have a lattice mismatch no greater than approximately 2.0% and a thickness of the compound semiconductor portion is at least approximately 20 nm.    
     
     
         128 . The integrated circuit of  claim 123 , wherein: 
 the accommodating buffer layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the monocrystalline Group IV semiconductor substrate; and    the accommodating buffer layer and the compound semiconductor portion have a lattice mismatch no greater than approximately 2.0% and a thickness of the compound semiconductor portion is at least approximately 20 nm.    
     
     
         129 . The integrated circuit of  claim 123 , wherein the accommodating buffer layer and the compound semiconductor portion have a lattice mismatch no greater than approximately 2.0% and a thickness of the compound semiconductor portion is at least approximately 20 nm.  
     
     
         130 . An integrated circuit comprising: 
 a first accommodating buffer layer;    a first monocrystalline semiconductor layer overlying the first accommodating buffer layer;    a second accommodating buffer layer overlying the first monocrystalline semiconductor layer; and    a second monocrystalline semiconductor layer overlying the second accommodating buffer layer.    
     
     
         131 . The integrated circuit of  claim 130 , wherein: 
 one of the first and second monocrystalline semiconductor layers is a monocrystalline compound semiconductor layer; and    the other of the first and second monocrystalline semiconductor layers is a monocrystalline Group IV semiconductor layer.    
     
     
         132 . The integrated circuit of  claim 130 , wherein: 
 the first monocrystalline semiconductor layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the first accommodating buffer layer;    the second accommodating buffer layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the first monocrystalline semiconductor layer; and    the second monocrystalline semiconductor layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the second accommodating buffer layer.    
     
     
         133 . The integrated circuit of  claim 130 , wherein: 
 the first accommodating buffer layer and the first monocrystalline semiconductor layer have a lattice mismatch no greater than approximately 2.0% and a thickness of the first monocrystalline semiconductor layer is at least approximately 20 nm; and    the second accommodating buffer layer and the second monocrystalline semiconductor layer have a lattice mismatch no greater than approximately 2.0% and a thickness of the second monocrystalline semiconductor layer is at least approximately 20 nm.    
     
     
         134 . The integrated circuit of  claim 130 , further comprising a monocrystalline Group IV substrate underlying the first accommodating buffer layer.  
     
     
         135 . An integrated circuit comprising: 
 an accommodating buffer layer; and    active devices, wherein all the active devices lie at least partially within or over a monocrystalline compound semiconductor layer that overlies the accommodating buffer layer.    
     
     
         136 . The integrated circuit of  claim 135 , wherein: 
 the integrated circuit includes electronic components;    the electronic components include the active devices active and at least one other component; and    all the electronic components lie at least partially within or over a monocrystalline compound semiconductor layer that overlies the accommodating buffer layer.    
     
     
         137 . The integrated circuit of  claim 135 , wherein the compound semiconductor layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the accommodating buffer layer.  
     
     
         138 . The integrated circuit of  claim 135 , further comprising a monocrystalline Group IV semiconductor substrate that underlies the accommodating buffer layer.  
     
     
         139 . The integrated circuit of  claim 138 , wherein the monocrystalline Group IV semiconductor substrate that is at least approximately 300 millimeters wide.  
     
     
         140 . The integrated circuit of  claim 138 , wherein the accommodating buffer layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the monocrystalline Group IV semiconductor substrate.  
     
     
         141 . The integrated circuit of  claim 138 , wherein the integrated circuit has a feature selected from a group consisting of: 
 the accommodating buffer layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the monocrystalline Group IV semiconductor substrate; and    the accommodating buffer layer and the monocrystalline Group IV semiconductor substrate have a lattice mismatch no greater than approximately 2.0% and a thickness of the accommodating buffer layer is at least approximately 20 nm.    
     
     
         142 . The integrated circuit of  claim 138 , wherein: 
 the accommodating buffer layer has a crystal orientation that is rotated by approximately 45° with respect to a crystal orientation of the monocrystalline Group IV semiconductor substrate; and    the accommodating buffer layer and the monocrystalline Group IV semiconductor substrate have a lattice mismatch no greater than approximately 2.0% and a thickness of the accommodating buffer layer is at least approximately 20 nm.    
     
     
         143 . The integrated circuit of  claim 135 , wherein the accommodating buffer layer and the monocrystalline compound semiconductor layer have a lattice mismatch no greater than approximately 2.0% and a thickness of the monocrystalline compound semiconductor layer is at least approximately 20 nm.