Inventor · disambiguated record
Keith Chung
Also filed as: CHUNG JR KEITH · CHUNG KEITH · CHUNG KEITH H
4 granted patents·5 pending applications·1 citations·filing 2011–2024
58Inventor score
Top patents by PatentIndex Score
9 records- 0174US2025048719A1Method to integrate dc & rf phase change switches into high-speed sige bicmosNORTHROP GRUMMAN SYSTEMS CORP·Filed 2024·Application pending·0 cites
- 0269US12150316B2Method to integrate DC and RF phase change switches into high-speed SiGe BiCMOSNORTHROP GRUMMAN SYSTEMS CORP·Filed 2022·Granted Nov 19, 2024·0 cites·11 claims
- 0357US11522010B2Method to integrate DC and RF phase change switches into high-speed SiGe BiCMOSNORTHROP GRUMMAN SYSTEMS CORP·Filed 2019·Granted Dec 6, 2022·0 cites·7 claims
- 0457US8642454B2Low temperature selective epitaxy of silicon germanium alloys employing cyclic deposit and etchBRABANT PAUL D·Filed 2012·Granted Feb 4, 2014·1 cites·25 claims
- 0548US2013040440A1EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2IBM·Filed 2012·Application pending·0 cites
- 0646US2013040438A1EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2IBM·Filed 2011·Application pending·0 cites
- 0745US9218962B2Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursorGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·0 cites·19 claims
- 0835US2014120678A1Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional StructuresSHINRIKI MANABU·Filed 2013·Application pending·0 cites
- 0933US2017194138A1Low temperature selective deposition employing a germanium-containing gas assisted etchIBM·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →