Inventor · disambiguated record
Eric Jalaguier
Also filed as: JALAGUIER ERIC
17 granted patents·5 pending applications·230 citations·filing 1999–2024
93Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE13SOITEC SILICON ON INSULATOR3ASPAR BERNARD1CLAVELIER LAURENT1COMMISSARIAT A L ATOMIQUE1
Top patents by PatentIndex Score
22 records- 0191US6974759B2Method for making a stacked comprising a thin film adhering to a target substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Dec 13, 2005·46 cites·26 claims
- 0287US7208392B1Creation of an electrically conducting bonding between two semi-conductor elementsSOITEC SILICON ON INSULATOR·Filed 2000·Granted Apr 24, 2007·45 cites·9 claims
- 0387US7008859B2Wafer and method of producing a substrate by transfer of a layer that includes foreign speciesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Mar 7, 2006·33 cites·19 claims
- 0486US8679946B2Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 25, 2014·5 cites·28 claims
- 0584US7829927B2Polyoxometallates in memory devicesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Nov 9, 2010·13 cites·27 claims
- 0681US6362077B1Structure comprising a thin layer of material made up of conductive zones and insulating zones and a method of manufacturing such a structureCOMMISSARIAT A L ATOMIQUE·Filed 1999·Granted Mar 26, 2002·62 cites·25 claims
- 0779US8481409B2Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrateMORICEAU HUBERT·Filed 2005·Granted Jul 9, 2013·5 cites·15 claims
- 0870US8865548B2Method of making a non-volatile double gate memory cellCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Oct 21, 2014·3 cites·24 claims
- 0968US8940623B2Process for obtaining an array of nanodotsGAY GUILLAUME·Filed 2012·Granted Jan 27, 2015·4 cites·20 claims
- 1067US7031578B2Method and device for passive alignment of optical waveguides and optoelectronic components and optical system using said deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Apr 18, 2006·11 cites·12 claims
- 1163US7645684B2Wafer and method of producing a substrate by transfer of a layer that includes foreign speciesSOITEC SILICON ON INSULATOR·Filed 2008·Granted Jan 12, 2010·1 cites·18 claims
- 1262US7535115B2Wafer and method of producing a substrate by transfer of a layer that includes foreign speciesSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 19, 2009·1 cites·16 claims
- 1357US2025212704A1Ferroelectric storage device and method for manufacturing such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 1455US12382845B2Method for manufacturing resistive memory cellsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Aug 5, 2025·0 cites·6 claims
- 1554US7906362B2Assembling two substrates by molecular adhesionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Mar 15, 2011·1 cites·35 claims
- 1654US2024381798A1Resistive memory cellCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 1748US2009311477A1Compliant Substrate In Particular For Hetero-Epitaxial DepositingASPAR BERNARD·Filed 2009·Application pending·0 cites
- 1845US11711927B2Filamentary type non-volatile memory deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jul 25, 2023·0 cites·19 claims
- 1940US2002094668A1Thin layer structure made up of conductive and insulative zonesFiled 2002·Application pending·0 cites
- 2039US10002769B2Method for functionalizing a solid substrate, other than a substrate made of gold, via specific chemical compoundsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Jun 19, 2018·0 cites·14 claims
- 2137US10297641B2Memory deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted May 21, 2019·0 cites·25 claims
- 2233US2005242367A1Thin-film electronic device, in particular power device, and method for making sameCLAVELIER LAURENT·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →