Inventor · disambiguated record
Hazara S. Rathore
Also filed as: RATHORE HAZARA · RATHORE HAZARA S · RATHORE HAZARA SINGH
33 granted patents·4 pending applications·1,890 citations·filing 1992–2015
98Inventor score
Top patents by PatentIndex Score
37 records- 0199US7397260B2Structure and method for monitoring stress-induced degradation of conductive interconnectsIBM·Filed 2005·Granted Jul 8, 2008·169 cites·12 claims
- 0297US6734090B2Method of making an edge seal for a semiconductor deviceIBM·Filed 2002·Granted May 11, 2004·605 cites·9 claims
- 0396US6069068ASub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivityIBM·Filed 1997·Granted May 30, 2000·224 cites·12 claims
- 0493US7279411B2Process for forming a redundant structureIBM·Filed 2005·Granted Oct 9, 2007·23 cites·12 claims
- 0593US6033939AMethod for providing electrically fusible links in copper interconnectionIBM·Filed 1998·Granted Mar 7, 2000·152 cites·13 claims
- 0691US6130161AMethod of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivityIBM·Filed 1997·Granted Oct 10, 2000·111 cites·13 claims
- 0787US6348731B1Copper interconnections with enhanced electromigration resistance and reduced defect sensitivity and method of forming sameIBM·Filed 1999·Granted Feb 19, 2002·77 cites·5 claims
- 0887US6287954B1Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivityIBM·Filed 1999·Granted Sep 11, 2001·71 cites·15 claims
- 0982US7224063B2Dual-damascene metallization interconnectionIBM·Filed 2001·Granted May 29, 2007·30 cites·6 claims
- 1082US6972209B2Stacked via-stud with improved reliability in copper metallurgyIBM·Filed 2002·Granted Dec 6, 2005·32 cites·8 claims
- 1180US7163883B2Edge seal for a semiconductor deviceIBM·Filed 2003·Granted Jan 16, 2007·27 cites·6 claims
- 1280US7138714B2Via barrier layers continuous with metal line barrier layers at notched or dielectric mesa portions in metal linesIBM·Filed 2005·Granted Nov 21, 2006·10 cites·10 claims
- 1379US7388224B2Structure for determining thermal cycle reliabilityIBM·Filed 2006·Granted Jun 17, 2008·4 cites·14 claims
- 1479US6133139ASelf-aligned composite insulator with sub-half-micron multilevel high density electrical interconnections and process thereofIBM·Filed 1997·Granted Oct 17, 2000·51 cites·33 claims
- 1578US7470613B2Dual damascene multi-level metallizationIBM·Filed 2007·Granted Dec 30, 2008·7 cites·19 claims
- 1673US6258710B1Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivityIBM·Filed 1999·Granted Jul 10, 2001·39 cites·9 claims
- 1772US8466056B2Method of forming metal interconnect structures in ultra low-k dielectricsAGARWALA BIRENDRA·Filed 2010·Granted Jun 18, 2013·4 cites·20 claims
- 1872US5976970AMethod of making and laterally filling key hole structure for ultra fine pitch conductor linesIBM·Filed 1996·Granted Nov 2, 1999·43 cites·11 claims
- 1970US7639032B2Structure for monitoring stress-induced degradation of conductive interconnectsIBM·Filed 2007·Granted Dec 29, 2009·2 cites·7 claims
- 2070US5434451ATungsten liner process for simultaneous formation of integral contact studs and interconnect linesIBM·Filed 1993·Granted Jul 18, 1995·44 cites·17 claims
- 2169US8053257B2Method for prediction of premature dielectric breakdown in a semiconductorIBM·Filed 2008·Granted Nov 8, 2011·5 cites·11 claims
- 2269US6825561B1Structure and method for eliminating time dependent dielectric breakdown failure of low-k materialIBM·Filed 2003·Granted Nov 30, 2004·15 cites·16 claims
- 2368US5981374ASub-half-micron multi-level interconnection structure and process thereofIBM·Filed 1997·Granted Nov 9, 1999·37 cites·30 claims
- 2465US6069051AMethod of producing planar metal-to-metal capacitor for use in integrated circuitsIBM·Filed 1996·Granted May 30, 2000·34 cites·17 claims
- 2564US6294835B1Self-aligned composite insulator with sub-half-micron multilevel high density electrical interconnections and process thereofIBM·Filed 1999·Granted Sep 25, 2001·26 cites·12 claims
- 2662US7098054B2Method and structure for determining thermal cycle reliabilityIBM·Filed 2004·Granted Aug 29, 2006·5 cites·16 claims
- 2758US5252516AMethod for producing interlevel stud viasIBM·Filed 1992·Granted Oct 12, 1993·26 cites·6 claims
- 2857US7692439B2Structure for modeling stress-induced degradation of conductive interconnectsIBM·Filed 2008·Granted Apr 6, 2010·0 cites·6 claims
- 2956US9443776B2Method and structure for determining thermal cycle reliabilityGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 13, 2016·0 cites·10 claims
- 3051US9287186B2Method and structure for determining thermal cycle reliabilityFILIPPI RONALD GENE·Filed 2008·Granted Mar 15, 2016·0 cites·10 claims
- 3151US2010176513A1Structure and method of forming metal interconnect structures in ultra low-k dielectricsIBM·Filed 2009·Application pending·0 cites
- 3249US5760595AHigh temperature electromigration stress test system, test socket, and use thereofIBM·Filed 1996·Granted Jun 2, 1998·15 cites·9 claims
- 3349US2007205515A1Device having a redundant structureIBM·Filed 2007·Application pending·0 cites
- 3446US6989282B2Control of liner thickness for improving thermal cycle reliabilityIBM·Filed 2004·Granted Jan 24, 2006·2 cites·13 claims
- 3546US2006014376A1Stacked via-stud with improved reliability in copper metallurgyIBM·Filed 2005·Application pending·0 cites
- 3644US7345305B2Control of liner thickness for improving thermal cycle reliabilityIBM·Filed 2005·Granted Mar 18, 2008·0 cites·15 claims
- 3741US2006281338A1Method for prediction of premature dielectric breakdown in a semiconductorIBM·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →