Inventor · disambiguated record
Danny Chi Nim
Also filed as: NIM DANNY · NIM DANNY C · NIM DANNY CHI
13 granted patents·996 citations·filing 1996–1998
95Inventor score
Top patents by PatentIndex Score
13 records- 0197US5929481AHigh density trench DMOS transistor with trench bottom implantSILICONIX INC·Filed 1997·Granted Jul 27, 1999·254 cites·6 claims
- 0297US5895951AMOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenchesMEGAMOS CORP·Filed 1996·Granted Apr 20, 1999·239 cites·11 claims
- 0392US5763915ADMOS transistors having trenched gate oxideMAGEMOS CORP·Filed 1996·Granted Jun 9, 1998·149 cites·7 claims
- 0481US6048759AGate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdownMAGEPOWER SEMICONDUCTOR CORP·Filed 1998·Granted Apr 11, 2000·49 cites·19 claims
- 0581US5930630AMethod for device ruggedness improvement and on-resistance reduction for power MOSFET achieved by novel source contact structureMEGAMOS CORP·Filed 1997·Granted Jul 27, 1999·72 cites·7 claims
- 0671US5763914ACell topology for power transistors with increased packing densityMEGAMOS CORP·Filed 1997·Granted Jun 9, 1998·32 cites·37 claims
- 0770US5973361ADMOS transistors with diffusion merged body regions manufactured with reduced number of masks and enhanced ruggednessMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Oct 26, 1999·42 cites·13 claims
- 0870US5729037AMOSFET structure and fabrication process for decreasing threshold voltageMEGAMOS CORP·Filed 1996·Granted Mar 17, 1998·30 cites·7 claims
- 0969US5923065APower MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savingsMEGAMOS CORP·Filed 1996·Granted Jul 13, 1999·30 cites·6 claims
- 1067US5668026ADMOS fabrication process implemented with reduced number of masksMEGAMOS CORP·Filed 1996·Granted Sep 16, 1997·34 cites·7 claims
- 1165US5877529AMosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggednessMEGAMOS CORP·Filed 1997·Granted Mar 2, 1999·24 cites·16 claims
- 1265US5747853ASemiconductor structure with controlled breakdown protectionMEGAMOS CORP·Filed 1996·Granted May 5, 1998·30 cites·18 claims
- 1349US5883410AEdge wrap-around protective extension for covering and protecting edges of thick oxide layerMEGAMOS CORP·Filed 1997·Granted Mar 16, 1999·11 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →