Inventor · disambiguated record
Vijayakumar Ramachandrarao
Also filed as: RAMACHANDRARAO VIJAYAKUMAR · RAMACHANDRARAO VIJAYAKUMAR S · RAMACHANDRARAO VIJAYAKUMAR SUBRAMANYARAO
24 granted patents·12 pending applications·320 citations·filing 2002–2009
96Inventor score
Files withINTEL CORP25RAMACHANDRARAO VIJAYAKUMAR S2BRISTOL ROBERT1IYER SUBRAMANYAM A1RAMACHANDRARAO VIJAYAKUMAR1
Top patents by PatentIndex Score
36 records- 0190US7005390B2Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materialsINTEL CORP·Filed 2002·Granted Feb 28, 2006·52 cites·17 claims
- 0289US7238604B2Forming thin hard mask over air gap or porous dielectricINTEL CORP·Filed 2003·Granted Jul 3, 2007·42 cites·26 claims
- 0389US6624127B1Highly polar cleans for removal of residues from semiconductor structuresINTEL CORP·Filed 2002·Granted Sep 23, 2003·28 cites·10 claims
- 0488US7335586B2Sealing porous dielectric material using plasma-induced surface polymerizationINTEL CORP·Filed 2005·Granted Feb 26, 2008·12 cites·33 claims
- 0587US7220668B2Method of patterning a porous dielectric materialINTEL CORP·Filed 2005·Granted May 22, 2007·11 cites·18 claims
- 0687US6812132B2Filling small dimension vias using supercritical carbon dioxideINTEL CORP·Filed 2003·Granted Nov 2, 2004·40 cites·22 claims
- 0786US8080475B2Removal chemistry for selectively etching metal hard maskRAMACHANDRARAO VIJAYAKUMAR SUBRAMANYARAO·Filed 2009·Granted Dec 20, 2011·16 cites·16 claims
- 0886US7374867B2Enhancing photoresist performance using electric fieldsINTEL CORP·Filed 2003·Granted May 20, 2008·21 cites·10 claims
- 0986US7022655B2Highly polar cleans for removal of residues from semiconductor structuresINTEL CORP·Filed 2003·Granted Apr 4, 2006·21 cites·5 claims
- 1080US6974762B2Adhesion of carbon doped oxides by silanizationINTEL CORP·Filed 2002·Granted Dec 13, 2005·19 cites·23 claims
- 1179US7605073B2Sealants for metal interconnect protection in microelectronic devices having air gap interconnect structuresINTEL CORP·Filed 2006·Granted Oct 20, 2009·9 cites·12 claims
- 1277US7977228B2Methods for the formation of interconnects separated by air gapsINTEL CORP·Filed 2006·Granted Jul 12, 2011·5 cites·16 claims
- 1370US6620741B1Method for controlling etch bias of carbon doped oxide filmsINTEL CORP·Filed 2002·Granted Sep 16, 2003·12 cites·30 claims
- 1467US7179757B2Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materialsINTEL CORP·Filed 2004·Granted Feb 20, 2007·11 cites·10 claims
- 1566US7422020B2Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectricINTEL CORP·Filed 2006·Granted Sep 9, 2008·1 cites·10 claims
- 1660US7268015B2Method for wafer stacking using copper structures of substantially uniform heightINTEL CORP·Filed 2006·Granted Sep 11, 2007·1 cites·11 claims
- 1756US7101443B2Supercritical carbon dioxide-based cleaning of metal linesINTEL CORP·Filed 2003·Granted Sep 5, 2006·1 cites·11 claims
- 1855US8017568B2Cleaning residues from semiconductor structuresINTEL CORP·Filed 2003·Granted Sep 13, 2011·1 cites·4 claims
- 1955US7214605B2Deposition of diffusion barrierINTEL CORP·Filed 2003·Granted May 8, 2007·6 cites·8 claims
- 2054US2008220380A1Enhancing photoresist performance using electric fieldsBRISTOL ROBERT·Filed 2008·Application pending·0 cites
- 2153US7038324B2Wafer stacking using interconnect structures of substantially uniform heightINTEL CORP·Filed 2004·Granted May 2, 2006·4 cites·14 claims
- 2247US7303648B2Via etch processINTEL CORP·Filed 2004·Granted Dec 4, 2007·2 cites·10 claims
- 2347US7233068B2Filling small dimension vias using supercritical carbon dioxideINTEL CORP·Filed 2004·Granted Jun 19, 2007·2 cites·15 claims
- 2447US7049053B2Supercritical carbon dioxide to reduce line edge roughnessINTEL CORP·Filed 2003·Granted May 23, 2006·3 cites·16 claims
- 2547US2009324928A1Forming ultra low dielectric constant porous dielectric films and structures formed therebyRAMACHANDRARAO VIJAYAKUMAR·Filed 2008·Application pending·0 cites
- 2645US2009241988A1Photoresist and antireflective layer removal solution and method thereofINTEL CORP·Filed 2008·Application pending·0 cites
- 2744US2006108067A1Controlled use of photochemically susceptible chemistries for etching, cleaning and surface conditioningIYER SUBRAMANYAM A·Filed 2006·Application pending·0 cites
- 2840US2009001594A1Airgap interconnect systemYOO HUI JAE·Filed 2007·Application pending·0 cites
- 2939US2004261816A1Using bidentate chelators to clean semiconductor wafersFiled 2003·Application pending·0 cites
- 3038US7018938B2Controlled use of photochemically susceptible chemistries for etching, cleaning and surface conditioningINTEL CORP·Filed 2002·Granted Mar 28, 2006·0 cites·9 claims
- 3138US2004266184A1Post-deposition modification of interlayer dielectricsRAMACHANDRARAO VIJAYAKUMAR S·Filed 2003·Application pending·0 cites
- 3237US2004079388A1Removing fluorine-based plasma etch residuesFiled 2002·Application pending·0 cites
- 3336US2006102204A1Method for removing a residue from a substrate using supercritical carbon dioxide processingINTEL CORP·Filed 2004·Application pending·0 cites
- 3436US2004072448A1Protecting delicate semiconductor features during wet etchingFiled 2002·Application pending·0 cites
- 3532US2004134885A1Etching and cleaning of semiconductors using supercritical carbon dioxideFiled 2003·Application pending·0 cites
- 3631US2007155161A1Selective removal of sacrificial light absorbing material over porous dielectricRAMACHANDRARAO VIJAYAKUMAR S·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →