Inventor · disambiguated record
Won-Cheol Jeong
Also filed as: JEONG WON CHEOL
38 granted patents·15 pending applications·557 citations·filing 2003–2024
98Inventor score
Top patents by PatentIndex Score
53 records- 0198US7372722B2Methods of operating magnetic random access memory devices including heat-generating structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 13, 2008·102 cites·30 claims
- 0297US7440308B2Phase-change random access memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 21, 2008·88 cites·19 claims
- 0396US7442602B2Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each otherSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 28, 2008·39 cites·14 claims
- 0495US7651906B2Integrated circuit devices having a stress buffer spacer and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 26, 2010·27 cites·43 claims
- 0594US7544565B2Semiconductor devices having a convex active region and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 9, 2009·30 cites·17 claims
- 0693US7598112B2Phase change memory devices and their methods of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 6, 2009·24 cites·12 claims
- 0790US7164598B2Methods of operating magnetic random access memory device using spin injection and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 16, 2007·25 cites·42 claims
- 0888US7671395B2Phase change memory cells having a cell diode and a bottom electrode self-aligned with each otherSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 2, 2010·14 cites·35 claims
- 0987US7534723B2Methods of forming fine patterns, and methods of forming trench isolation layers using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·12 cites·11 claims
- 1087US7369428B2Methods of operating a magnetic random access memory device and related devices and structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 6, 2008·19 cites·36 claims
- 1183US11024631B2Integrated circuit device including field isolation layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 1, 2021·3 cites·20 claims
- 1283US7307874B2Methods of operating magnetic random access memory devices including magnets adjacent magnetic tunnel junction structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 11, 2007·12 cites·3 claims
- 1382US7092283B2Magnetic random access memory devices including heat generating layers and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 15, 2006·29 cites·63 claims
- 1480US7521706B2Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 21, 2009·22 cites·11 claims
- 1580US7508699B2Magnetic memory device and methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 24, 2009·9 cites·15 claims
- 1680US7123505B2Method of reading information in a magnetic memory by a reversible resistance change in a magnetic tunnel junctionSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·27 cites·20 claims
- 1779US7262989B2Magnetic memory device having flux focusing layer thereinSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 28, 2007·5 cites·10 claims
- 1873US2025133787A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1972US8120005B2Phase change memory devices and their methods of fabricationPARK JAE-HYUN·Filed 2009·Granted Feb 21, 2012·3 cites·20 claims
- 2071US8119478B2Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the sameJEONG WON-CHEOL·Filed 2009·Granted Feb 21, 2012·7 cites·19 claims
- 2171US7622307B2Semiconductor devices having a planarized insulating layer and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 24, 2009·4 cites·23 claims
- 2269US7577016B2Twin-cell semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 18, 2009·6 cites·8 claims
- 2369US6943420B2Magnetic random access memory (MRAM) devices having nonparallel main and reference magnetic resistorsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 13, 2005·16 cites·37 claims
- 2467US7667998B2Phase change memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 23, 2010·6 cites·16 claims
- 2565US7569401B2Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 4, 2009·2 cites·14 claims
- 2664US7989869B2Non-volatile memory devices having improved operational characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 2, 2011·2 cites·20 claims
- 2764US7522447B2Magnetic memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·5 cites·17 claims
- 2862US8314457B2Non-volatile memory devicesKIM HYUN-SUK·Filed 2011·Granted Nov 20, 2012·1 cites·7 claims
- 2961US12224315B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 11, 2025·0 cites·20 claims
- 3060US7910912B2Semiconductor devices having a planarized insulating layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 22, 2011·1 cites·12 claims
- 3160US7057222B2Magnetic memories with bit lines and digit lines that intersect at oblique angles and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 6, 2006·10 cites·17 claims
- 3258US7639771B2Memory device with external magnetic field generator and method of operating and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 29, 2009·0 cites·23 claims
- 3357US2024234417A9Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3456US7488981B2Memory devices having sharp-tipped phase change layer patternsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 10, 2009·4 cites·26 claims
- 3553US7589994B2Methods of writing data to magnetic random access memory devices with bit line and/or digit line magnetic layersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 15, 2009·2 cites·10 claims
- 3652US7973357B2Non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 5, 2011·0 cites·9 claims
- 3752US2009236651A1Semiconductor devices having a convex active regionKWAK DONG HWA·Filed 2009·Application pending·0 cites
- 3849US8422275B2Magnetic memory device and methodHWANG IN-JUN·Filed 2009·Granted Apr 16, 2013·1 cites·16 claims
- 3948US2014061772A1Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active regionJEONG WON-CHEOL·Filed 2013·Application pending·0 cites
- 4047US8610192B2Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active regionsJEONG WON-CHEOL·Filed 2011·Granted Dec 17, 2013·0 cites·26 claims
- 4147US2005205952A1Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the samePARK JAE-HYUN·Filed 2005·Application pending·0 cites
- 4244US7821820B2Magnetic memory device and methodSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 26, 2010·0 cites·6 claims
- 4342US7414882B2Magnetic memory devices having rotationally offset magnetic storage elements thereinSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 19, 2008·0 cites·15 claims
- 4441US2006228853A1Memory devices including spacers on sidewalls of memory storage elements and related methodsJEONG WON-CHEOL·Filed 2006·Application pending·0 cites
- 4541US2008062750A1Magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4639US2009268515A1Twin-Cell Semiconductor Memory DevicesJEONG WON-CHEOL·Filed 2009·Application pending·0 cites
- 4737US2006098498A1Methods of reading data including comparing multiple measurements of a characteristic of a data storage element and related devicesJEONG WON-CHEOL·Filed 2005·Application pending·0 cites
- 4837US2007155093A1Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the sameJEONG WON-CHEOL·Filed 2006·Application pending·0 cites
- 4936US2015315768A1Construction machine with floating functionVOLVO CONSTR EQUIP AB·Filed 2012·Application pending·0 cites
- 5035US2012238067A1Methods of Fabricating Semiconductor Devices Having Gate TrenchesJEONG WON-CHEOL·Filed 2012·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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