Inventor · disambiguated record
Sukesh Sandhu
Also filed as: SANDHU SUKESH
31 granted patents·9 pending applications·485 citations·filing 1996–2013
97Inventor score
Top patents by PatentIndex Score
40 records- 0198US7052972B2Method for forming sublithographic features during the manufacture of a semiconductor device and a resulting in-process apparatusMICRON TECHNOLOGY INC·Filed 2003·Granted May 30, 2006·217 cites·10 claims
- 0296US7179717B2Methods of forming integrated circuit devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 20, 2007·39 cites·48 claims
- 0391US7811935B2Isolation regions and their formationMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 12, 2010·20 cites·93 claims
- 0488US6323085B1High coupling split-gate transistor and method for its formationMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 27, 2001·46 cites·75 claims
- 0586US7375004B2Method of making an isolation trench and resulting isolation trenchMICRON TECHNOLOGY INC·Filed 2006·Granted May 20, 2008·12 cites·28 claims
- 0686US6924186B2Method of forming a memory device and semiconductor deviceMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 2, 2005·29 cites·23 claims
- 0785US6677640B1Memory cell with tight couplingMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 13, 2004·28 cites·39 claims
- 0880US7271060B2Semiconductor processing methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 18, 2007·10 cites·25 claims
- 0980US6614072B2High coupling split-gate transistorMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 2, 2003·16 cites·8 claims
- 1077US8963279B2Semiconductor device isolation structuresMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 24, 2015·3 cites·4 claims
- 1175US7999328B2Isolation trench having first and second trench areas of different widthsMICRON TECHNOLOGY INC·Filed 2007·Granted Aug 16, 2011·5 cites·17 claims
- 1273US7473615B2Semiconductor processing methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 6, 2009·4 cites·10 claims
- 1372US7413962B2Method for forming sublithographic features during the manufacture of a semiconductor device and a resulting in-process apparatusMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 19, 2008·3 cites·11 claims
- 1472US6830975B2Method of forming field effect transistor comprising at least one of a conductive metal or metal compound in electrical connection with transistor gate semiconductor materialMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 14, 2004·12 cites·32 claims
- 1569US8269306B2Isolation regionsSANDHU SUKESH·Filed 2010·Granted Sep 18, 2012·3 cites·19 claims
- 1667US7781860B2Semiconductor constructions, and electronic systemsMICRON TECHNOLOGY INC·Filed 2008·Granted Aug 24, 2010·2 cites·25 claims
- 1766US7935610B2Semiconductor device isolation structuresMICRON TECHNOLOGY INC·Filed 2006·Granted May 3, 2011·2 cites·36 claims
- 1863US7396720B2High coupling memory cellMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 8, 2008·7 cites·8 claims
- 1959US6750502B1Technique to quench electrical defects in aluminum oxide filmMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 15, 2004·5 cites·18 claims
- 2058US6398923B1Multiple species sputtering methodMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 4, 2002·7 cites·37 claims
- 2154US8304322B2Methods of filling isolation trenches for semiconductor devices and resulting structuresRUDECK PAUL J·Filed 2006·Granted Nov 6, 2012·1 cites·13 claims
- 2252US8378446B2Semiconductor device isolation structuresMICRON TECHNOLOGY INC·Filed 2011·Granted Feb 19, 2013·0 cites·18 claims
- 2351US8035189B2Semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2010·Granted Oct 11, 2011·0 cites·9 claims
- 2450US7749837B2High coupling memory cellMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 6, 2010·0 cites·18 claims
- 2550US7453134B2Integrated circuit device with a circuit element formed on an active region having rounded cornersMICRON TECHNOLOGY INC·Filed 2007·Granted Nov 18, 2008·0 cites·21 claims
- 2650US7358139B2Method of forming a field effect transistor including depositing and removing insulative material effective to expose transistor gate conductive material but not transistor gate semiconductor materialMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 15, 2008·0 cites·10 claims
- 2749US7271064B2Method of forming a field effect transistor using conductive masking materialMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 18, 2007·0 cites·20 claims
- 2849US2011073929A1High coupling memory cellMICRON TECHNOLOGY INC·Filed 2010·Application pending·0 cites
- 2949US2006211201A1High coupling memory cellMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3048US5750012AMultiple species sputtering for improved bottom coverage and improved sputter rateMICRON TECHNOLOGY INC·Filed 1996·Granted May 12, 1998·13 cites·37 claims
- 3148US2006246655A1Memory of forming a coupling dielectric ta2o5 in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3247US2006043368A1Flash cell structures and methods of formationMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
- 3343US2013009276A1Methods of filling isolation trenches for semiconductor devices and resulting structuresRUDECK PAUL J·Filed 2012·Application pending·0 cites
- 3442US2007212874A1Method for filling shallow isolation trenches and other recesses during the formation of a semiconductor device and electronic systems including the semiconductor deviceMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3541US7112491B2Methods of forming field effect transistors including floating gate field effect transistorsMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 26, 2006·0 cites·20 claims
- 3641US2007194402A1Shallow trench isolation structureMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3740US7241661B2Method of forming a coupling dielectric Ta2O5 in a memory deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 10, 2007·0 cites·35 claims
- 3838US2006046402A1Flash cell structures and methods of formationMICRON TECHNOLOGY INC·Filed 2004·Application pending·0 cites
- 3938US2004106259A1High coupling split-gate transistorFiled 2003·Application pending·0 cites
- 4029US6083358AMultiple species sputtering for improved bottom coverage and improved sputter rateMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 4, 2000·1 cites·32 claims
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