Inventor · disambiguated record
Hyoung-Sub Kim
Also filed as: KIM HYOUNG SUB
27 granted patents·2 pending applications·404 citations·filing 1994–2020
96Inventor score
Top patents by PatentIndex Score
29 records- 0197US5574299ASemiconductor device having vertical conduction transistors and cylindrical cell gatesSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Nov 12, 1996·168 cites·11 claims
- 0295US9419000B2Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devicesKIM DAE-IK·Filed 2014·Granted Aug 16, 2016·17 cites·20 claims
- 0394US11705503B2Semiconductor device including non-sacrificial gate spacers and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 18, 2023·3 cites·18 claims
- 0494US9012321B1Method of manufacturing semiconductor deviceKIM DAE-IK·Filed 2014·Granted Apr 21, 2015·18 cites·20 claims
- 0592US10037999B2Semiconductor device including landing pad for connecting substrate and capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 31, 2018·10 cites·19 claims
- 0692US9953981B2Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 24, 2018·7 cites·11 claims
- 0792US8158976B2Thin-film transistor and method of manufacturing the sameSON KYOUNG-SEOK·Filed 2010·Granted Apr 17, 2012·35 cites·17 claims
- 0884US6939765B2Integration method of a semiconductor device having a recessed gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 6, 2005·25 cites·20 claims
- 0983US9349633B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 24, 2016·6 cites·16 claims
- 1079US11439222B2Shampoo assisting deviceKIM HYOUNG SUB·Filed 2020·Granted Sep 13, 2022·1 cites·9 claims
- 1175US5547889AMethod of forming a semiconductor device having vertical conduction transistors and cylindrical cell gatesSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Aug 20, 1996·26 cites·3 claims
- 1274US9613966B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 4, 2017·2 cites·18 claims
- 1366US7183600B2Semiconductor device with trench gate type transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 27, 2007·11 cites·10 claims
- 1463USD986502SShampoo headrestKIM HYOUNG SUB·Filed 2020·Granted May 16, 2023·3 cites·1 claims
- 1560US7709346B2Semiconductor device with trench gate type transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 4, 2010·2 cites·28 claims
- 1652US7135744B2Semiconductor device having self-aligned contact hole and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 14, 2006·4 cites·9 claims
- 1751US5753562AMethods of forming semiconductor devices in substrates having inverted-trench isolation regions thereinSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 19, 1998·17 cites·11 claims
- 1851US2019198639A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 1949US7592215B2Semiconductor device having self-aligned contact hole and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 22, 2009·0 cites·7 claims
- 2049US6218690B1Transistor having reverse self-aligned structureSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 17, 2001·11 cites·9 claims
- 2149US5476807AMethod for forming fine patterns in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Dec 19, 1995·21 cites·7 claims
- 2248US2005275014A1Integration method of a semiconductor device having a recessed gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 2346US10811541B2Semiconductor device having germanium containing active pattern and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 20, 2020·0 cites·20 claims
- 2446US9754944B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 5, 2017·0 cites·7 claims
- 2546US7057242B2Transistor structures having access gates with narrowed central portionsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 6, 2006·2 cites·3 claims
- 2645US6051492AMethod of manufacturing a wiring layer in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 18, 2000·12 cites·14 claims
- 2736US6696722B1Storage node of DRAM cellSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Feb 24, 2004·0 cites·9 claims
- 2833US11062818B2Stacking structure having material layer on graphene layer and method of forming material layer on graphene layerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 13, 2021·0 cites·4 claims
- 2933US6168990B1Method for fabricating Dram cell capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 2, 2001·3 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →