Inventor · disambiguated record
Kozo Makiyama
Also filed as: MAKIYAMA KOZO
73 granted patents·15 pending applications·205 citations·filing 1995–2023
98Inventor score
Top patents by PatentIndex Score
88 records- 0196US7718541B2Method of processing resist, semiconductor device, and method of producing the sameFUJITSU LTD·Filed 2005·Granted May 18, 2010·34 cites·20 claims
- 0291US8916459B2Compound semiconductor device with mesa structureFUJITSU LTD·Filed 2013·Granted Dec 23, 2014·9 cites·7 claims
- 0390US10263103B2Semiconductor apparatusFUJITSU LTD·Filed 2016·Granted Apr 16, 2019·7 cites·13 claims
- 0486US8183558B2Compound semiconductor device with T-shaped gate electrodeMAKIYAMA KOZO·Filed 2011·Granted May 22, 2012·7 cites·10 claims
- 0585US9412830B2Semiconductor device and method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2015·Granted Aug 9, 2016·3 cites·14 claims
- 0684US10992269B2Compound semiconductor device with high power and reduced off-leakage and method for manufacturing the sameFUJITSU LTD·Filed 2018·Granted Apr 27, 2021·3 cites·15 claims
- 0784US8587092B2Semiconductor device and manufacturing method of the sameMAKIYAMA KOZO·Filed 2008·Granted Nov 19, 2013·8 cites·14 claims
- 0884US8581261B2Compound semiconductor device and method of manufacturing the sameKANAMURA MASAHITO·Filed 2011·Granted Nov 12, 2013·5 cites·10 claims
- 0982US7429446B2Resist pattern forming method and semiconductor device fabrication methodFUJITSU LTD·Filed 2004·Granted Sep 30, 2008·19 cites·25 claims
- 1081US7419894B2Gate electrode and manufacturing method thereof, and semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2005·Granted Sep 2, 2008·7 cites·30 claims
- 1180US11024730B2Nitride semiconductor device and manufacturing method for the sameFUJITSU LTD·Filed 2019·Granted Jun 1, 2021·2 cites·27 claims
- 1280US7948062B2Semiconductor device and method for manufacturing semiconductor deviceFUJITSU LTD·Filed 2008·Granted May 24, 2011·6 cites·18 claims
- 1379US9035353B2Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the sameOHKI TOSHIHIRO·Filed 2012·Granted May 19, 2015·5 cites·17 claims
- 1479US6717271B2Semiconductor device with mushroom electrode and manufacture method thereofFUJITSU LTD·Filed 2002·Granted Apr 6, 2004·18 cites·5 claims
- 1576US10796917B2Method for manufacturing gate insulator for HEMTFUJITSU LTD·Filed 2019·Granted Oct 6, 2020·1 cites·6 claims
- 1673US12283922B2Manufacturing method for compound semiconductor deviceFUJITSU LTD·Filed 2023·Granted Apr 22, 2025·0 cites·1 claims
- 1773US9324821B2Compound semiconductor device and manufacturing method of the sameFUJITSU LTD·Filed 2012·Granted Apr 26, 2016·2 cites·3 claims
- 1872US7906417B2Compound semiconductor device with T-shaped gate electrode and its manufactureFUJITSU LTD·Filed 2008·Granted Mar 15, 2011·4 cites·10 claims
- 1971US8133775B2Semiconductor device with mushroom electrode and manufacture method thereofMAKIYAMA KOZO·Filed 2011·Granted Mar 13, 2012·2 cites·8 claims
- 2067US9368359B2Method of manufacturing compound semiconductor deviceFUJITSU LTD·Filed 2015·Granted Jun 14, 2016·1 cites·3 claims
- 2167US8410616B2Method of processing resist, semiconductor device, and method of producing the sameMAKIYAMA KOZO·Filed 2010·Granted Apr 2, 2013·1 cites·2 claims
- 2267US2023275001A1Semiconductor device, semiconductor device fabrication method, and electronic deviceFUJITSU LTD·Filed 2023·Application pending·0 cites
- 2366US7335542B2Semiconductor device with mushroom electrode and manufacture method thereofFUJITSU LTD·Filed 2007·Granted Feb 26, 2008·2 cites·6 claims
- 2465US8816408B2Compound semiconductor device and manufacturing method thereofMAKIYAMA KOZO·Filed 2010·Granted Aug 26, 2014·2 cites·18 claims
- 2564US11688663B2Semiconductor device, semiconductor device fabrication method, and electronic deviceFUJITSU LTD·Filed 2020·Granted Jun 27, 2023·0 cites·10 claims
- 2664US5818078ASemiconductor device having a regrowth crystal regionFUJITSU LTD·Filed 1995·Granted Oct 6, 1998·20 cites·17 claims
- 2762US8791465B2Compound semiconductor device and manufacturing thereforOKAMOTO NAOYA·Filed 2012·Granted Jul 29, 2014·1 cites·8 claims
- 2862US8709886B2Compound semiconductor device and manufacturing method thereforMAKIYAMA KOZO·Filed 2012·Granted Apr 29, 2014·1 cites·6 claims
- 2962US7319070B2Semiconductor device fabrication methodFUJITSU LTD·Filed 2005·Granted Jan 15, 2008·1 cites·15 claims
- 3062US6784036B2Method for making semiconductor deviceFUJITSU LTD·Filed 2003·Granted Aug 31, 2004·10 cites·14 claims
- 3161US8557645B2Semiconductor device with a gate electrode having a shape formed based on a slope and gate lower opening and method of manufacturing the sameKURAHASHI NAOKO·Filed 2010·Granted Oct 15, 2013·2 cites·10 claims
- 3260US8999772B2Compound semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2014·Granted Apr 7, 2015·0 cites·3 claims
- 3359US10002942B2Semiconductor device and method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2017·Granted Jun 19, 2018·0 cites·17 claims
- 3459US6998695B2Semiconductor device having a mushroom gate with hollow spaceEUDYNA DEVICES INC·Filed 2003·Granted Feb 14, 2006·8 cites·32 claims
- 3559US2020251585A1Compound semiconductor device, manufacturing method for compound semiconductor device, and amplifierFUJITSU LTD·Filed 2020·Application pending·0 cites
- 3658US7960763B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2008·Granted Jun 14, 2011·0 cites·5 claims
- 3758US7220628B2Semiconductor device and manufacturing method thereof, and gate electrode and manufacturing method thereofFUJITSU LTD·Filed 2004·Granted May 22, 2007·5 cites·50 claims
- 3857US9779933B2Semiconductor device and method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2016·Granted Oct 3, 2017·0 cites·14 claims
- 3957US8895378B2Compound semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2013·Granted Nov 25, 2014·0 cites·6 claims
- 4056US9941401B2Semiconductor device, power supply apparatus and high-frequency amplifierFUJITSU LTD·Filed 2016·Granted Apr 10, 2018·0 cites·6 claims
- 4156US9257514B2Semiconductor device with plural electrodes formed on substrateFUJITSU LTD·Filed 2014·Granted Feb 9, 2016·0 cites·3 claims
- 4256US8980768B2Semiconductor device and manufacturing method of the sameFUJITSU LTD·Filed 2013·Granted Mar 17, 2015·0 cites·5 claims
- 4355US11094813B2Compound semiconductor device, method of manufacturing compound semiconductor device, and amplifierFUJITSU LTD·Filed 2020·Granted Aug 17, 2021·0 cites·5 claims
- 4455US9224668B2Semiconductor HEMT device with stoichiometric silicon nitride layerFUJITSU LTD·Filed 2013·Granted Dec 29, 2015·0 cites·3 claims
- 4555US8399361B2Semiconductor device and method of manufacturing the sameMAKIYAMA KOZO·Filed 2012·Granted Mar 19, 2013·0 cites·6 claims
- 4654US9209042B2Compound semiconductor device and manufacturing method thereforOKAMOTO NAOYA·Filed 2014·Granted Dec 8, 2015·0 cites·5 claims
- 4754US8227838B2Semiconductor device and method of manufacturing the sameMAKIYAMA KOZO·Filed 2011·Granted Jul 24, 2012·0 cites·5 claims
- 4854US8163653B2Semiconductor device and method of manufacturing the sameMAKIYAMA KOZO·Filed 2011·Granted Apr 24, 2012·0 cites·5 claims
- 4954US2009057719A1Compound semiconductor device with mesa structureFUJITSU LTD·Filed 2008·Application pending·0 cites
- 5053US10727305B2Semiconductor device and fabrication method therefor, and high-frequency amplifierFUJITSU LTD·Filed 2018·Granted Jul 28, 2020·0 cites·5 claims
Showing the top 50 of 88 patent records by PatentIndex Score.
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