Compound semiconductor device, manufacturing method for compound semiconductor device, and amplifier

Abstract

A compound semiconductor device includes a semiconductor laminate structure including an electron transit layer and an electron supply layer that are formed from compound semiconductor, a source electrode, a gate electrode, and a drain electrode that are provided above the semiconductor laminate structure and arranged in a first direction, and a first insulating film having a first internal stress and formed over the semiconductor laminate structure and between the gate electrode and the drain electrode, wherein a slit extending in the first direction is defined in the first insulating film.

What is claimed is: 
     
         1 . A compound semiconductor device comprising:
 a semiconductor laminate structure including an electron transit layer and an electron supply layer that are formed from compound semiconductor;   a source electrode, a gate electrode, and a drain electrode that are provided above the semiconductor laminate structure and arranged in a first direction; and   a first insulating film having a first internal stress and formed over the semiconductor laminate structure and between the gate electrode and the drain electrode,   wherein a slit extending in the first direction is defined in the first insulating film.   
     
     
         2 . The compound semiconductor device according to  claim 1 , further comprising a second insulating film formed in the slit and having a second internal stress in a direction opposite to the first internal stress. 
     
     
         3 . The compound semiconductor device according to  claim 1 , wherein the first internal stress is a tensile stress. 
     
     
         4 . The compound semiconductor device according to  claim 1 , wherein the electron supply layer contains metal nitride, and 32% or more of metal atoms in the metal nitride are Al. 
     
     
         5 . The compound semiconductor device according to  claim 4 , wherein 50% or more of the metal atoms in the metal nitride are Al. 
     
     
         6 . The compound semiconductor device according to  claim 4 , wherein a thickness of the electron supply layer is 10 nm or less. 
     
     
         7 . The compound semiconductor device according to  claim 1 , wherein the slit is spaced apart from the gate electrode in the first direction. 
     
     
         8 . The compound semiconductor device according to  claim 7 , wherein the slit is spaced apart from the gate electrode by 0.2 μm or more in the first direction. 
     
     
         9 . The compound semiconductor device according to  claim 1 , further comprising a protective film formed between the semiconductor laminate structure and the first insulating film. 
     
     
         10 . The compound semiconductor device according to  claim 9 , wherein the protective film is also formed below the slit. 
     
     
         11 . A manufacturing method for a compound semiconductor device, the manufacturing method comprising:
 forming a semiconductor laminate structure including an electron transit layer and an electron supply layer that are from compound semiconductor;   forming a source electrode, a gate electrode, and a drain electrode arranged in a first direction above the semiconductor laminate structure; and   forming, above the semiconductor laminate structure and between the gate electrode and the drain electrode, a first insulating film which has a first internal stress and in which a slit extending in the first direction is defined.   
     
     
         12 . An amplifier comprising:
 a compensating circuit that compensates distortion of an input signal; and   a compound semiconductor device including   a semiconductor laminate structure including an electron transit layer and an electron supply layer that are formed from compound semiconductor,   a source electrode, a gate electrode, and a drain electrode that are provided above the semiconductor laminate structure and arranged in a first direction, and   a first insulating film having a first internal stress and formed above the semiconductor laminate structure and between the gate electrode and the drain electrode,   wherein a slit extending in the first direction is defined in the first insulating film.