Inventor · disambiguated record
Gowrisankar Damarla
Also filed as: DAMARLA GOWRISANKAR
12 granted patents·6 pending applications·76 citations·filing 2013–2023
89Inventor score
Top patents by PatentIndex Score
18 records- 0195US11088017B2Stair step structures including insulative materials, and related devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 10, 2021·4 cites·17 claims
- 0295US10269625B1Methods of forming semiconductor structures having stair step structuresMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 23, 2019·39 cites·7 claims
- 0389US10600682B2Semiconductor devices including a stair step structure, and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 24, 2020·6 cites·20 claims
- 0489US9263459B1Capping poly channel pillars in stacked circuitsLI HONGQI·Filed 2014·Granted Feb 16, 2016·11 cites·18 claims
- 0586US10096612B2Three dimensional memory device having isolated periphery contacts through an active layer exhume processINTEL CORP·Filed 2015·Granted Oct 9, 2018·4 cites·20 claims
- 0684US10318170B2Solid state memory componentINTEL CORP·Filed 2018·Granted Jun 11, 2019·3 cites·25 claims
- 0782US9857989B1Solid state memory componentINTEL CORP·Filed 2016·Granted Jan 2, 2018·3 cites·16 claims
- 0879US9577192B2Method for forming a metal cap in a semiconductor memory deviceSONY CORP·Filed 2014·Granted Feb 21, 2017·3 cites·20 claims
- 0976US9911643B2Semiconductor constructions and methods of forming intersecting lines of materialMICRON TECHNOLOGY INC·Filed 2016·Granted Mar 6, 2018·2 cites·13 claims
- 1060US10847442B2Interconnect assemblies with through-silicon vias and stress-relief featuresMICRON TECHNOLOGY INC·Filed 2014·Granted Nov 24, 2020·1 cites·17 claims
- 1159US2025185263A1Robust ono films and methods of making thereofTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1255US2024234130A1High quality insitu treated pecvd filmTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1353US9391001B2Semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 12, 2016·0 cites·16 claims
- 1453US2019051662A1Three dimensional memory device having isolated periphery contacts through an active layer exhume processINTEL CORP·Filed 2018·Application pending·0 cites
- 1551US2025113558A1Semiconductor device with self-aligned nitride for power isolationTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1650US2025176176A1Flash memory including self-aligned floating gatesTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1749US2017133585A1Method for forming a metal cap in a semiconductor memory deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2017·Application pending·0 cites
- 1848US10319678B2Capping poly channel pillars in stacked circuitsINTEL CORP·Filed 2015·Granted Jun 11, 2019·0 cites·18 claims
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