Inventor · disambiguated record
Minjoo L. Lee
Also filed as: LEE MINJOO L · LEE MINJOO LARRY
8 granted patents·3 pending applications·163 citations·filing 2002–2008
87Inventor score
Top patents by PatentIndex Score
11 records- 0195US6730551B2Formation of planar strained layersMASSACHUSETTS INST TECHNOLOGY·Filed 2002·Granted May 4, 2004·93 cites·23 claims
- 0280US8063413B2Tensile strained GE for electronic and optoelectronic applicationsBAI YU·Filed 2008·Granted Nov 22, 2011·7 cites·6 claims
- 0377US6916727B2Enhancement of P-type metal-oxide-semiconductor field effect transistorsMASSACHUSETTS INST TECHNOLOGY·Filed 2002·Granted Jul 12, 2005·20 cites·47 claims
- 0473US7791107B2Strained tri-channel layer for semiconductor-based electronic devicesMASSACHUSETTS INST TECHNOLOGY·Filed 2004·Granted Sep 7, 2010·18 cites·22 claims
- 0573US7301180B2Structure and method for a high-speed semiconductor device having a Ge channel layerMASSACHUSETTS INST TECHNOLOGY·Filed 2002·Granted Nov 27, 2007·15 cites·17 claims
- 0667US7141820B2Structures with planar strained layersMASSACHUSETTS INST TECHNOLOGY·Filed 2004·Granted Nov 28, 2006·10 cites·34 claims
- 0747US2007072354A1Structures with planar strained layersMASSACHUSETTS INST TECHNOLOGY·Filed 2006·Application pending·0 cites
- 0843US8436336B2Structure and method for a high-speed semiconductor device having a Ge channel layerLEE MINJOO L·Filed 2007·Granted May 7, 2013·0 cites·18 claims
- 0943US2005151164A1Enhancement of p-type metal-oxide-semiconductor field effect transistorsAMBERWAVE SYSTEMS CORP·Filed 2005·Application pending·0 cites
- 1040US2007252223A1Insulated gate devices and method of making sameMASSACHUSETTS INST TECHNOLOGY·Filed 2006·Application pending·0 cites
- 1137US7005668B2Method for improving hole mobility enhancement in strained silicon p-type MOSFETSMASSACHUSETTS INST TECHNOLOGY·Filed 2003·Granted Feb 28, 2006·0 cites·37 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →