Inventor · disambiguated record
Jan Hoentschel
Also filed as: HOENTSCHEL JAN
174 granted patents·45 pending applications·1,002 citations·filing 2006–2019
99Inventor score
Files withGLOBALFOUNDRIES INC99HOENTSCHEL JAN28FLACHOWSKY STEFAN25ADVANCED MICRO DEVICES INC20SCHEIPER THILO15
Top patents by PatentIndex Score
219 records- 0198US7855118B2Drive current increase in transistors by asymmetric amorphization implantationADVANCED MICRO DEVICES INC·Filed 2009·Granted Dec 21, 2010·95 cites·20 claims
- 0297US9425318B1Integrated circuits with fets having nanowires and methods of manufacturing the sameGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·32 cites·19 claims
- 0396US9793372B1Integrated circuit including a dummy gate structure and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 17, 2017·14 cites·10 claims
- 0496US8936977B2Late in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantationsHOENTSCHEL JAN·Filed 2012·Granted Jan 20, 2015·21 cites·14 claims
- 0596US8703578B2Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantationsHOENTSCHEL JAN·Filed 2012·Granted Apr 22, 2014·22 cites·15 claims
- 0695US9590118B1Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structureGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 7, 2017·14 cites·15 claims
- 0795US9224840B2Replacement gate FinFET structures with high mobility channelFLACHOWSKY STEFAN·Filed 2012·Granted Dec 29, 2015·27 cites·12 claims
- 0895US8975704B2Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantationsGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Mar 10, 2015·18 cites·20 claims
- 0995US8247275B2Strain engineering in three-dimensional transistors based on globally strained semiconductor base layersHOENTSCHEL JAN·Filed 2010·Granted Aug 21, 2012·24 cites·16 claims
- 1095US7399663B2Embedded strain layer in thin SOI transistors and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Jul 15, 2008·31 cites·18 claims
- 1194US9324869B1Method of forming a semiconductor device and resulting semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 26, 2016·12 cites·20 claims
- 1294US8357604B2Work function adjustment in high-k gate stacks for devices of different threshold voltageGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 22, 2013·19 cites·17 claims
- 1394US7586153B2Technique for forming recessed strained drain/source regions in NMOS and PMOS transistorsADVANCED MICRO DEVICES INC·Filed 2006·Granted Sep 8, 2009·25 cites·17 claims
- 1493US8815741B1Method of forming a semiconductor structure including an implantation of ions into a layer of spacer materialGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 26, 2014·13 cites·20 claims
- 1593US7608499B2Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Oct 27, 2009·23 cites·24 claims
- 1693US7579262B2Different embedded strain layers in PMOS and NMOS transistors and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 25, 2009·25 cites·23 claims
- 1792US9608112B2BULEX contacts in advanced FDSOI techniquesGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 28, 2017·12 cites·18 claims
- 1892US9449972B1Ferroelectric FinFETGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 20, 2016·7 cites·16 claims
- 1992US8574981B2Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising sameFLACHOWSKY STEFAN·Filed 2011·Granted Nov 5, 2013·13 cites·18 claims
- 2092US7943462B1Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacerGLOBALFOUNDRIES INC·Filed 2010·Granted May 17, 2011·14 cites·20 claims
- 2192US7329571B2Technique for providing multiple stress sources in NMOS and PMOS transistorsADVANCED MICRO DEVICES INC·Filed 2006·Granted Feb 12, 2008·24 cites·29 claims
- 2291US8598007B1Methods of performing highly tilted halo implantation processes on semiconductor devicesFLACHOWSKY STEFAN·Filed 2012·Granted Dec 3, 2013·11 cites·23 claims
- 2391US8409942B2Replacement gate approach based on a reverse offset spacer applied prior to work function metal depositionSCHEIPER THILO·Filed 2010·Granted Apr 2, 2013·13 cites·20 claims
- 2491US7763505B2Method for reducing crystal defects in transistors with re-grown shallow junctions by appropriately selecting crystalline orientationsGLOBALFOUNDRIES INC·Filed 2007·Granted Jul 27, 2010·18 cites·16 claims
- 2591US7659213B2Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the sameGLOBALFOUNDRIES INC·Filed 2006·Granted Feb 9, 2010·20 cites·21 claims
- 2690US8835936B2Source and drain doping using doped raised source and drain regionsGLOBALFOUNDRIES INC·Filed 2012·Granted Sep 16, 2014·11 cites·24 claims
- 2790US8574991B2Asymmetric transistor devices formed by asymmetric spacers and tilted implantationHOENTSCHEL JAN·Filed 2012·Granted Nov 5, 2013·10 cites·13 claims
- 2890US8158482B2Asymmetric transistor devices formed by asymmetric spacers and tilted implantationHOENTSCHEL JAN·Filed 2009·Granted Apr 17, 2012·15 cites·12 claims
- 2989US9391176B2Multi-gate FETs having corrugated semiconductor stacks and method of forming the sameGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 12, 2016·9 cites·17 claims
- 3089US8791509B2Multiple gate transistor having homogenously silicided fin end portionsBEYER SVEN·Filed 2009·Granted Jul 29, 2014·20 cites·20 claims
- 3189US8524563B2Semiconductor device with strain-inducing regions and method thereofFLACHOWSKY STEFAN·Filed 2012·Granted Sep 3, 2013·8 cites·12 claims
- 3288US9466717B1Complex semiconductor devices of the SOI typeGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 11, 2016·6 cites·17 claims
- 3388US8198152B2Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materialsBEYER SVEN·Filed 2010·Granted Jun 12, 2012·10 cites·14 claims
- 3487US9012956B2Channel SiGe removal from PFET source/drain region for improved silicide formation in HKMG technologies without embedded SiGeGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 21, 2015·8 cites·19 claims
- 3587US8338894B2Increased depth of drain and source regions in complementary transistors by forming a deep drain and source region prior to a cavity etchGRIEBENOW UWE·Filed 2010·Granted Dec 25, 2012·8 cites·19 claims
- 3687US8154084B2Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon materialHOENTSCHEL JAN·Filed 2009·Granted Apr 10, 2012·12 cites·18 claims
- 3786US9214396B1Transistor with embedded stress-inducing layersGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 15, 2015·8 cites·20 claims
- 3886US8809151B2Transistor comprising an embedded sigma shaped sequentially formed semiconductor alloyFLACHOWSKY STEFAN·Filed 2011·Granted Aug 19, 2014·8 cites·17 claims
- 3986US8471342B1Integrated circuits formed on strained substrates and including relaxed buffer layers and methods for the manufacture thereofFLACHOWSKY STEFAN·Filed 2011·Granted Jun 25, 2013·8 cites·20 claims
- 4086US7829421B2SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Nov 9, 2010·11 cites·8 claims
- 4186US7354836B2Technique for forming a strained transistor by a late amorphization and disposable spacersADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 8, 2008·10 cites·19 claims
- 4285US7696052B2Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regionsADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 13, 2010·10 cites·13 claims
- 4384US9698179B2Capacitor structure and method of forming a capacitor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 4, 2017·4 cites·20 claims
- 4484US8669151B2High-K metal gate electrode structures formed at different process stages of a semiconductor deviceHOENTSCHEL JAN·Filed 2010·Granted Mar 11, 2014·6 cites·17 claims
- 4584US8524566B2Methods for the fabrication of integrated circuits including back-etching of raised conductive structuresFLACHOWSKY STEFAN·Filed 2011·Granted Sep 3, 2013·7 cites·20 claims
- 4684US8508008B2Optical signal transfer in a semiconductor device by using monolithic opto-electronic componentsGRIEBENOW UWE·Filed 2010·Granted Aug 13, 2013·10 cites·17 claims
- 4784US8501601B2Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloyFLACHOWSKY STEFAN·Filed 2011·Granted Aug 6, 2013·6 cites·15 claims
- 4884US8426266B2Stress memorization with reduced fringing capacitance based on silicon nitride in MOS semiconductor devicesHOENTSCHEL JAN·Filed 2010·Granted Apr 23, 2013·6 cites·18 claims
- 4984US8404550B2Performance enhancement in PFET transistors comprising high-k metal gate stack by increasing dopant confinementSCHEIPER THILO·Filed 2010·Granted Mar 26, 2013·7 cites·16 claims
- 5083US9412859B2Contact geometry having a gate silicon length decoupled from a transistor lengthGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 9, 2016·5 cites·24 claims
Showing the top 50 of 219 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →