Inventor · disambiguated record
Ozgur Aktas
Also filed as: AKTAS OZGUR · AKTAS ÖZGÜR
31 granted patents·6 pending applications·44 citations·filing 2013–2025
95Inventor score
Top patents by PatentIndex Score
37 records- 0194US10535547B2Methods of forming a vertical semiconductor diode using an engineered substrateQROMIS INC·Filed 2018·Granted Jan 14, 2020·6 cites·10 claims
- 0293US10355120B2Gallium nitride epitaxial structures for power devicesQROMIS INC·Filed 2018·Granted Jul 16, 2019·6 cites·23 claims
- 0391US10622468B2RF device integrated on an engineered substrateQROMIS INC·Filed 2018·Granted Apr 14, 2020·5 cites·16 claims
- 0489US10833186B2Gallium nitride epitaxial structures for power devicesQROMIS INC·Filed 2019·Granted Nov 10, 2020·3 cites·18 claims
- 0589US10734303B2Power and RF devices implemented using an engineered substrate structureQROMIS INC·Filed 2018·Granted Aug 4, 2020·4 cites·15 claims
- 0688US10181419B2Vertical semiconductor diode manufactured with an engineered substrateQROMIS INC·Filed 2017·Granted Jan 15, 2019·3 cites·7 claims
- 0787US10573516B2Methods for integrated devices on an engineered substrateQROMIS INC·Filed 2018·Granted Feb 25, 2020·4 cites·20 claims
- 0884US10395965B2Electronic power devices integrated with an engineered substrateQROMIS INC·Filed 2017·Granted Aug 27, 2019·2 cites·13 claims
- 0983US10204778B2Method and system for vertical power devicesQROMIS INC·Filed 2017·Granted Feb 12, 2019·3 cites·20 claims
- 1082US10755986B2Aluminum nitride based Silicon-on-Insulator substrate structureQROMIS INC·Filed 2017·Granted Aug 25, 2020·3 cites·24 claims
- 1180US10529613B2Electronic power devices integrated with an engineered substrateQROMIS INC·Filed 2019·Granted Jan 7, 2020·1 cites·7 claims
- 1279US2023261101A1Gallium nitride epitaxial structures for power devicesQROMIS INC·Filed 2023·Application pending·0 cites
- 1378US11735460B2Integrated circuit devices with an engineered substrateQROMIS INC·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 1478US2025316618A1Methods for fabrication of mmic and rf devices on engineered substratesQROMIS INC·Filed 2025·Application pending·0 cites
- 1577US10438792B2Methods for integration of elemental and compound semiconductors on a ceramic substrateQROMIS INC·Filed 2017·Granted Oct 8, 2019·2 cites·19 claims
- 1673US11699750B2Gallium nitride epitaxial structures for power devicesQROMIS INC·Filed 2020·Granted Jul 11, 2023·0 cites·22 claims
- 1771US12362296B2Systems for fabrication of MMIC and RF devices on engineered substratesQROMIS INC·Filed 2021·Granted Jul 15, 2025·0 cites·16 claims
- 1870US2025316824A1Cell separating element with mount, battery arrangement and method for producing a cell separating elementAUDI AG·Filed 2025·Application pending·0 cites
- 1970US2025316817A1Cell separating element with integrated structural pattern, as well as battery module with such a cell separating elementAUDI AG·Filed 2025·Application pending·0 cites
- 2069US11271101B2RF device integrated on an engineered substrateQROMIS INC·Filed 2020·Granted Mar 8, 2022·0 cites·19 claims
- 2169US11107720B2Methods of manufacturing vertical semiconductor diodes using an engineered substrateQROMIS INC·Filed 2019·Granted Aug 31, 2021·0 cites·8 claims
- 2268US11121244B2RF device integrated on an engineered substrateQROMIS INC·Filed 2020·Granted Sep 14, 2021·0 cites·19 claims
- 2367US10930576B2Gallium-nitride based devices implementing an engineered substrate structureQROMIS INC·Filed 2020·Granted Feb 23, 2021·0 cites·8 claims
- 2464US11164743B2Systems and method for integrated devices on an engineered substrateQROMIS INC·Filed 2020·Granted Nov 2, 2021·0 cites·18 claims
- 2562US9159799B2Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layerAVOGY INC·Filed 2013·Granted Oct 13, 2015·1 cites·12 claims
- 2662US9123799B2Gallium nitride field effect transistor with buried field plate protected lateral channelAVOGY INC·Filed 2013·Granted Sep 1, 2015·1 cites·13 claims
- 2758US11328927B2System for integration of elemental and compound semiconductors on a ceramic substrateQROMIS INC·Filed 2019·Granted May 10, 2022·0 cites·12 claims
- 2858US10734486B2Lateral high electron mobility transistor with integrated clamp diodeQROMIS INC·Filed 2019·Granted Aug 4, 2020·0 cites·11 claims
- 2956US11881404B2Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sourcesQROMIS INC·Filed 2021·Granted Jan 23, 2024·0 cites·20 claims
- 3056US2019334015A1Vertical gallium nitride schottky diodeQROMIS INC·Filed 2019·Application pending·0 cites
- 3154US10411108B2Vertical gallium nitride Schottky diodeQROMIS INC·Filed 2018·Granted Sep 10, 2019·0 cites·6 claims
- 3253US10490636B2Lateral high electron mobility transistor with integrated clamp diodeQROMIS INC·Filed 2017·Granted Nov 26, 2019·0 cites·8 claims
- 3352US9525039B2Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layerAVOGY INC·Filed 2015·Granted Dec 20, 2016·0 cites·7 claims
- 3449US10763110B2Method and system for forming doped regions by diffusion gallium nitride materialsQROMIS INC·Filed 2019·Granted Sep 1, 2020·0 cites·21 claims
- 3547US2015340449A1Gallium nitride field effect transistor with buried field plate protected lateral channelAVOGY INC·Filed 2015·Application pending·0 cites
- 3646US10312378B2Lateral gallium nitride JFET with controlled doping profileQROMIS INC·Filed 2018·Granted Jun 4, 2019·0 cites·10 claims
- 3738US10076972B2Vehicle-electrical-system assembly and method for operating a vehicle electrical system of an electrically drivable means of transportation having a fuel cellVOLKSWAGEN AG·Filed 2015·Granted Sep 18, 2018·0 cites·12 claims
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