US2023261101A1PendingUtilityA1

Gallium nitride epitaxial structures for power devices

79
Assignee: QROMIS INCPriority: Jan 18, 2017Filed: Apr 17, 2023Published: Aug 17, 2023
Est. expiryJan 18, 2037(~10.5 yrs left)· nominal 20-yr term from priority
Inventors:Vladimir OdnoblyudovSteve LesterOzgur Aktas
H10P 90/00H10P 14/69433H10P 14/3416H10P 14/3251H10P 14/3246H10P 14/3238H10P 14/3216H10P 14/3211H10P 14/2921H10P 14/24H10P 14/20H10D 62/8503H10D 62/82H10D 62/824H10D 30/475H10D 30/015H10D 30/4732H10D 62/8171H10D 30/4755H10D 62/124H01L 29/7787H01L 21/0254H01L 21/02634H01L 29/66462H01L 21/02458H01L 21/0242H01L 21/0262H01L 21/02488H01L 29/205H01L 21/0217H01L 21/0245H01L 21/02499H01L 21/02505H01L 29/7786H01L 21/02002H01L 29/267
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Claims

Abstract

An epitaxial semiconductor structure includes an engineered substrate having a substrate coefficient of thermal expansion. The engineered substrate includes a polycrystalline ceramic core, a barrier layer encapsulating the polycrystalline ceramic core, a bonding layer coupled to the barrier layer, and a single crystalline layer coupled to the bonding layer. The epitaxial semiconductor structure also includes an epitaxial layer coupled to the single crystalline layer. The epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An epitaxial semiconductor structure comprising:
 an engineered substrate having a substrate coefficient of thermal expansion, the engineered substrate comprising:
 a polycrystalline ceramic core; 
 a barrier layer encapsulating the polycrystalline ceramic core; 
 a bonding layer coupled to the barrier layer; and 
 a single crystalline layer coupled to the bonding layer; and 
   an epitaxial layer coupled to the single crystalline layer, wherein the epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion.   
     
     
         2 . The epitaxial semiconductor structure of  claim 1  wherein the single crystalline layer comprises a silicon carbide (SiC) layer. 
     
     
         3 . The epitaxial semiconductor structure of  claim 1  wherein the single crystalline layer comprises a gallium nitride (GaN) layer. 
     
     
         4 . The epitaxial semiconductor structure of  claim 1  wherein the single crystalline layer comprises a silicon germanium (SiGe) layer. 
     
     
         5 . The epitaxial semiconductor structure of  claim 1  wherein the single crystalline layer and the epitaxial layer are substantially lattice-matched. 
     
     
         6 . The epitaxial semiconductor structure of  claim 1  further comprising a buffer layer disposed between the single crystalline layer and the epitaxial layer. 
     
     
         7 . The epitaxial semiconductor structure of  claim 6  further comprising a silicon nitride layer disposed between the buffer layer and the epitaxial layer. 
     
     
         8 . The epitaxial semiconductor structure of  claim 1  wherein the epitaxial layer comprises gallium nitride (GaN). 
     
     
         9 . The epitaxial semiconductor structure of  claim 8  wherein the epitaxial layer comprises one or more doped GaN layers. 
     
     
         10 . The epitaxial semiconductor structure of  claim 9  wherein the one or more doped GaN layers comprise an n-type GaN layer. 
     
     
         11 . The epitaxial semiconductor structure of  claim 9  wherein the one or more doped GaN layers comprise a p-type GaN layer. 
     
     
         12 . The epitaxial semiconductor structure of  claim 8  wherein the epitaxial layer comprises one or more layers of undoped GaN and n-type GaN. 
     
     
         13 . The epitaxial semiconductor structure of  claim 8  wherein the epitaxial layer comprises one or more layers of undoped GaN and p-type GaN. 
     
     
         14 . The epitaxial semiconductor structure of  claim 8  wherein the epitaxial layer comprises one or more layers of undoped GaN, n-type GaN, and p-type GaN. 
     
     
         15 . The epitaxial semiconductor structure of  claim 8  wherein the epitaxial layer comprises unintentionally doped GaN. 
     
     
         16 . The epitaxial semiconductor structure of  claim 1  wherein the epitaxial layer comprises alternating layers of undoped GaN and doped GaN. 
     
     
         17 . The epitaxial semiconductor structure of  claim 16  wherein the doped GaN comprises carbon-doped GaN (C—GaN) or iron-doped GaN (Fe—GaN). 
     
     
         18 . The epitaxial semiconductor structure of  claim 1  wherein the epitaxial layer comprises:
 a doped gallium nitride (GaN) layer; and 
 an undoped GaN layer; 
 the epitaxial semiconductor structure further comprising:
 a buffer layer disposed between the single crystalline layer and the epitaxial layer; 
 an aluminum gallium nitride (AlGaN) layer coupled to the epitaxial layer; and 
 a cap layer. 
 
 
     
     
         19 . The epitaxial semiconductor structure of  claim 1  wherein the epitaxial layer comprises an aluminum gallium nitride (AlGaN) layer. 
     
     
         20 . The epitaxial semiconductor structure of  claim 19  wherein the AlGaN layer has an aluminum mole fraction less than 10%.

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