Inventor · disambiguated record
James Fiorenza
Also filed as: FIORENZA JAMES · FIORENZA JAMES G
44 granted patents·22 pending applications·566 citations·filing 2006–2024
98Inventor score
Files withANALOG DEVICES INC31TAIWAN SEMICONDUCTOR MFG11TAIWAN SEMICONDUCTOR MFG CO LTD9AMBERWAVE SYSTEMS CORP5CHENG ZHIYUAN2
Top patents by PatentIndex Score
66 records- 0198US8629477B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 14, 2014·35 cites·20 claims
- 0298US8324660B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationLOCHTEFELD ANTHONY J·Filed 2010·Granted Dec 4, 2012·85 cites·24 claims
- 0398US7626246B2Solutions for integrated circuit integration of alternative active area materialsAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Dec 1, 2009·121 cites·14 claims
- 0497US8384196B2Formation of devices by epitaxial layer overgrowthTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 26, 2013·39 cites·16 claims
- 0597US8034697B2Formation of devices by epitaxial layer overgrowthTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Oct 11, 2011·76 cites·28 claims
- 0696US8796734B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·16 cites·20 claims
- 0796US8519436B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 27, 2013·17 cites·20 claims
- 0896US8344242B2Multi-junction solar cellsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jan 1, 2013·29 cites·11 claims
- 0996US8253211B2Semiconductor sensor structures with reduced dislocation defect densitiesCHENG ZHIYUAN·Filed 2009·Granted Aug 28, 2012·36 cites·15 claims
- 1094US9984872B2Fabrication and structures of crystalline materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 29, 2018·9 cites·20 claims
- 1193US11393806B2Gallium nitride and silicon carbide hybrid power deviceANALOG DEVICES INC·Filed 2020·Granted Jul 19, 2022·3 cites·18 claims
- 1293US9431243B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·5 cites·21 claims
- 1391US12009207B2Gallium nitride device for high frequency and high power applicationsANALOG DEVICES INC·Filed 2022·Granted Jun 11, 2024·1 cites·16 claims
- 1491US11569182B2Aluminum-based gallium nitride integrated circuitsANALOG DEVICES INC·Filed 2020·Granted Jan 31, 2023·4 cites·15 claims
- 1591US8329541B2InP-based transistor fabricationYE PEIDE·Filed 2008·Granted Dec 11, 2012·34 cites·16 claims
- 1690US7897493B2Inducement of strain in a semiconductor layerTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 1, 2011·12 cites·18 claims
- 1788US8981427B2Polishing of small composite semiconductor materialsHYDRICK JENNIFER M·Filed 2009·Granted Mar 17, 2015·20 cites·15 claims
- 1887US12087713B2Gallium nitride integrated circuits including non-gold-based metallic materialsANALOG DEVICES INC·Filed 2022·Granted Sep 10, 2024·1 cites·20 claims
- 1987US9219112B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Dec 22, 2015·3 cites·21 claims
- 2085US8987028B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 24, 2015·3 cites·20 claims
- 2183US9934967B2Formation of devices by epitaxial layer overgrowthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 3, 2018·5 cites·20 claims
- 2281US11355598B2Field managed group III-V field effect device with epitaxial back-side field plateANALOG DEVICES INC·Filed 2019·Granted Jun 7, 2022·3 cites·30 claims
- 2380US11508821B2Gallium nitride device for high frequency and high power applicationsANALOG DEVICES INC·Filed 2018·Granted Nov 22, 2022·2 cites·10 claims
- 2479US12249631B2Gallium nitride device for high frequency and high power applicationsANALOG DEVICES INC·Filed 2023·Granted Mar 11, 2025·0 cites·19 claims
- 2574US2025098200A1Gallium nitride enhancement mode deviceANALOG DEVICES INC·Filed 2024·Application pending·0 cites
- 2673US9780190B2InP-based transistor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Oct 3, 2017·2 cites·20 claims
- 2773US2024420957A1Electric field management in semiconductor devicesANALOG DEVICES INC·Filed 2024·Application pending·0 cites
- 2870US12261134B2Aluminum-based gallium nitride integrated circuitsANALOG DEVICES INC·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 2969US9607846B2Polishing of small composite semiconductor materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 28, 2017·1 cites·20 claims
- 3068US10522389B2Transfer printing methodANALOG DEVICES INC·Filed 2015·Granted Dec 31, 2019·2 cites·20 claims
- 3167US11637096B2Gallium nitride and silicon carbide hybrid power deviceANALOG DEVICES INC·Filed 2022·Granted Apr 25, 2023·0 cites·16 claims
- 3264US12106960B2Electric field management in semiconductor devicesANALOG DEVICES INC·Filed 2021·Granted Oct 1, 2024·0 cites·9 claims
- 3360US10284194B2High gain load circuit for a differential pair using depletion mode transistorsANALOG DEVICES INC·Filed 2015·Granted May 7, 2019·1 cites·24 claims
- 3460US9105549B2Semiconductor sensor structures with reduced dislocation defect densitiesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 11, 2015·0 cites·20 claims
- 3560US2025212462A1Silicon compatible high temperature gallium nitride processANALOG DEVICES INC·Filed 2024·Application pending·0 cites
- 3659US2025393277A1Transistor device with metal backside field plateANALOG DEVICES INC·Filed 2024·Application pending·0 cites
- 3758US12230699B2Modification of electric fields of compound semiconductor devicesANALOG DEVICES INC·Filed 2020·Granted Feb 18, 2025·0 cites·20 claims
- 3857US10541315B2INP-based transistor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 21, 2020·0 cites·20 claims
- 3957US9484434B2Inducement of strain in a semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 1, 2016·0 cites·21 claims
- 4057US9455299B2Methods for semiconductor sensor structures with reduced dislocation defect densitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 27, 2016·0 cites·20 claims
- 4157US2024258383A1Soft switching by active backside field plateANALOG DEVICES INC·Filed 2024·Application pending·0 cites
- 4256US8927984B2Rotated channel semiconductor field effect transistorRAMGOSS INC·Filed 2013·Granted Jan 6, 2015·1 cites·18 claims
- 4356US8809106B2Method for semiconductor sensor structures with reduced dislocation defect densitiesCHENG ZHIYUAN·Filed 2012·Granted Aug 19, 2014·0 cites·20 claims
- 4455US2023377882A1Low defect semiconductor formation techniquesANALOG DEVICES INC·Filed 2023·Application pending·0 cites
- 4555US2010072515A1Fabrication and structures of crystalline materialAMBERWAVE SYSTEMS CORP·Filed 2009·Application pending·0 cites
- 4654US10002981B2Multi-junction solar cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Jun 19, 2018·0 cites·20 claims
- 4754US2022093779A1Gallium nitride enhancement mode deviceANALOG DEVICES INC·Filed 2019·Application pending·0 cites
- 4853US12356698B2Method of forming a sealed cavity embedded in a semiconductor waferANALOG DEVICES INC·Filed 2022·Granted Jul 8, 2025·0 cites·10 claims
- 4953US9287128B2Polishing of small composite semiconductor materialsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 15, 2016·0 cites·20 claims
- 5052US2024213362A1Enhancement mode gallium nitride transistorANALOG DEVICES INC·Filed 2022·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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