Inventor · disambiguated record
Tae-Kyung Oh
Also filed as: OH TAE K · OH TAE KYUNG · OH TAE Y
14 granted patents·5 pending applications·167 citations·filing 1993–2016
93Inventor score
Top patents by PatentIndex Score
19 records- 0197US9704988B2Dual work function buried gate type transistor and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jul 11, 2017·26 cites·4 claims
- 0297US9508847B2Semiconductor device having dual work function gate structure, method for fabricating the same, transistor circuit having the same, memory cell having the same, and electronic device having the sameSK HYNIX INC·Filed 2015·Granted Nov 29, 2016·18 cites·15 claims
- 0397US9306022B1Semiconductor device having dual work function gate structure and electronic device having the sameSK HYNIX INC·Filed 2015·Granted Apr 5, 2016·37 cites·20 claims
- 0496US9634109B2Semiconductor device having dual work function gate structure, method for fabricating the same, transistor circuit having the same, memory cell having the same, and electronic device having the sameSK HYNIX INC·Filed 2016·Granted Apr 25, 2017·12 cites·11 claims
- 0594US9356029B2Semiconductor device having buried gate, method of fabricating the same, and module and system having the sameSK HYNIX INC·Filed 2015·Granted May 31, 2016·9 cites·12 claims
- 0693US9240453B2Dual work function buried gate type transistor and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jan 19, 2016·15 cites·10 claims
- 0790US9818843B2Transistor having dual work function buried gate electrode and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Nov 14, 2017·6 cites·7 claims
- 0890US9064956B2Semiconductor device having buried gate, method of fabricating the same, and module and system having the sameSK HYNIX INC·Filed 2012·Granted Jun 23, 2015·8 cites·13 claims
- 0989US9577052B2Method for fabricating semiconductor device having dual work function gate structureSK HYNIX INC·Filed 2016·Granted Feb 21, 2017·5 cites·20 claims
- 1089US9530849B2Transistor having dual work function buried gate electrode and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Dec 27, 2016·9 cites·11 claims
- 1178US9472646B2Dual work function buried gate type transistor and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Oct 18, 2016·2 cites·6 claims
- 1260US5491566AIntegrated input-output device having a reading and a printing section on a single substrateGOLD STAR CO·Filed 1993·Granted Feb 13, 1996·20 cites·7 claims
- 1351US7737492B2Semiconductor device for reducing interference between adjoining gates and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 15, 2010·0 cites·8 claims
- 1451US2016240538A1Semiconductor device having buried gate, method of fabricating the same, and module and system having the sameSK HYNIX INC·Filed 2016·Application pending·0 cites
- 1548US2007084367A1Printing device system and patterning method using the sameYOO HONG S·Filed 2006·Application pending·0 cites
- 1644US2008032466A1Method for Fabricating Semiconductor DeviceHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 1738US8124481B2Semiconductor device for reducing interference between adjoining gates and method for manufacturing the sameOH TAE KYUNG·Filed 2010·Granted Feb 28, 2012·0 cites·8 claims
- 1836US2009261459A1Semiconductor device having a floating body with increased size and method for manufacturing the sameOH TAE KYUNG·Filed 2008·Application pending·0 cites
- 1929US2012012925A1Semiconductor device and method for manufacturing the sameOH TAE KYUNG·Filed 2010·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Tae-Kyung Oh files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →