Inventor · disambiguated record
Kei-Yu Ko
Also filed as: KO KEI-YU
24 granted patents·359 citations·filing 1993–2017
96Inventor score
Top patents by PatentIndex Score
24 records- 0188US6337285B1Self-aligned contact (SAC) etch with dual-chemistry processMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 8, 2002·42 cites·44 claims
- 0287US6831019B1Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodesMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 14, 2004·33 cites·19 claims
- 0379US6117791AEtchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed therebyMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 12, 2000·41 cites·11 claims
- 0476US7094700B2Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodesMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 22, 2006·15 cites·51 claims
- 0574US6121671ASemiconductor device having a substrate, an undoped silicon oxide structure, and an overlying doped silicon oxide structure with a side wall terminating at the undoped silicon oxide structureMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 19, 2000·31 cites·12 claims
- 0672US6479864B1Semiconductor structure having a plurality of gate stacksMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 12, 2002·11 cites·20 claims
- 0771US6716766B2Process variation resistant self aligned contact etchMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 6, 2004·14 cites·92 claims
- 0867US6967408B1Gate stack structureMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 22, 2005·8 cites·29 claims
- 0967US6277758B1Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcherMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 21, 2001·29 cites·57 claims
- 1066US7273566B2Gas compositionsMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 25, 2007·1 cites·7 claims
- 1166US6849557B1Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxideMICRON TECHNOLOGY INC·Filed 1997·Granted Feb 1, 2005·23 cites·98 claims
- 1265US7470628B2Etching methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 30, 2008·1 cites·16 claims
- 1362US6458685B2Method of forming a self-aligned contact openingMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 1, 2002·16 cites·28 claims
- 1461US6989108B2Etchant gas compositionMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 24, 2006·5 cites·14 claims
- 1561US6551940B1Undoped silicon dioxide as etch mask for patterning of doped silicon dioxideMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 22, 2003·18 cites·60 claims
- 1660US6117788ASemiconductor etching methodsMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 12, 2000·23 cites·51 claims
- 1755US6444586B2Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcherMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 3, 2002·4 cites·57 claims
- 1855US6432833B1Method of forming a self aligned contact openingMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 13, 2002·20 cites·60 claims
- 1954US7173339B1Semiconductor device having a substrate an undoped silicon oxide structure and an overlaying doped silicon oxide structure with a sidewall terminating at the undoped silicon oxide structureMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 6, 2007·6 cites·13 claims
- 2053US6875371B1Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed therebyMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 5, 2005·5 cites·44 claims
- 2151US10811233B2Process chamber having tunable showerhead and tunable linerAPPLIED MATERIALS INC·Filed 2017·Granted Oct 20, 2020·0 cites·18 claims
- 2246US6537922B1Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed therebyMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 25, 2003·1 cites·23 claims
- 2342US5399900AIsolation region in a group III-V semiconductor device and method of making the sameEASTMAN KODAK CO·Filed 1993·Granted Mar 21, 1995·12 cites·26 claims
- 2441US7319075B2Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed therebyMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 15, 2008·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →