Inventor · disambiguated record
Chuan-Li Chang
Also filed as: CHANG CHUAN · CHANG CHUAN-LI
9 granted patents·3 pending applications·165 citations·filing 1998–2025
88Inventor score
Top patents by PatentIndex Score
12 records- 0192US6403494B1Method of forming a floating gate self-aligned to STI on EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 11, 2002·55 cites·13 claims
- 0289US12040233B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·2 cites·20 claims
- 0379US6468863B2Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 22, 2002·31 cites·9 claims
- 0478US12389667B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 0577US2025301768A1Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0671US6110782AMethod to combine high voltage device and salicide processTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 29, 2000·32 cites·20 claims
- 0769US6387757B1Sacrificial self aligned spacer layer ion implant mask method for forming a split gate field effect transistor (FET) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 14, 2002·15 cites·13 claims
- 0867US6417046B1Modified nitride spacer for solving charge retention issue in floating gate memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·12 cites·24 claims
- 0960US7370441B2Hobnail structureCHANG CHUAN-LI·Filed 2006·Granted May 13, 2008·1 cites·5 claims
- 1056US6117732AUse of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 12, 2000·17 cites·19 claims
- 1144US2010257756A1Thin-type spike intensifying structureCHANG CHUAN-LI·Filed 2008·Application pending·0 cites
- 1237US2002142535A1Modified nitride spacer for solving charge retention issue in floating gate memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →