Inventor · disambiguated record
Su Chen Fan
Also filed as: FAN SU · FAN SU C · FAN SU CHEN
122 granted patents·27 pending applications·492 citations·filing 1999–2023
99Inventor score
Top patents by PatentIndex Score
149 records- 0198US9397049B1Gate tie-down enablement with inner spacerIBM·Filed 2015·Granted Jul 19, 2016·25 cites·14 claims
- 0298US9257348B2Methods of forming replacement gate structures for transistors and the resulting devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 9, 2016·43 cites·27 claims
- 0398US8084311B1Method of forming replacement metal gate with borderless contact and structure thereofHORAK DAVID V·Filed 2010·Granted Dec 27, 2011·57 cites·20 claims
- 0497US10020381B1Embedded bottom metal contact formed by a self-aligned contact process for vertical transistorsIBM·Filed 2017·Granted Jul 10, 2018·17 cites·4 claims
- 0597US9570573B1Self-aligned gate tie-down contacts with selective etch stop linerGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 14, 2017·15 cites·14 claims
- 0697US8772168B2Formation of the dielectric cap layer for a replacement gate structureXIE RUILONG·Filed 2012·Granted Jul 8, 2014·34 cites·7 claims
- 0796US11171051B1Contacts and liners having multi-segmented protective capsIBM·Filed 2020·Granted Nov 9, 2021·9 cites·20 claims
- 0895US9728462B2Stable multiple threshold voltage devices on replacement metal gate CMOS devicesIBM·Filed 2015·Granted Aug 8, 2017·12 cites·9 claims
- 0995US9576901B1Contact area structure and method for manufacturing the sameIBM·Filed 2016·Granted Feb 21, 2017·12 cites·18 claims
- 1094US9287130B1Method for single fin cuts using selective ion implantsGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 15, 2016·12 cites·23 claims
- 1194US8383490B2Borderless contact for ultra-thin body devicesIBM·Filed 2011·Granted Feb 26, 2013·15 cites·10 claims
- 1294US7371663B2Three dimensional IC device and alignment methods of IC device substratesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 13, 2008·22 cites·8 claims
- 1393US11810828B2Transistor boundary protection using reversible crosslinking reflowIBM·Filed 2021·Granted Nov 7, 2023·2 cites·19 claims
- 1493US9293551B2Integrated multiple gate length semiconductor device including self-aligned contactsIBM·Filed 2013·Granted Mar 22, 2016·12 cites·14 claims
- 1592US10971490B2Three-dimensional field effect deviceIBM·Filed 2018·Granted Apr 6, 2021·6 cites·20 claims
- 1692US9735054B2Gate tie-down enablement with inner spacerIBM·Filed 2016·Granted Aug 15, 2017·4 cites·20 claims
- 1792US8679909B2Recessing and capping of gate structures with varying metal compositionsXIE RUILONG·Filed 2012·Granted Mar 25, 2014·14 cites·15 claims
- 1892US8679968B2Method for forming a self-aligned contact opening by a lateral etchXIE RUILONG·Filed 2012·Granted Mar 25, 2014·19 cites·20 claims
- 1991US9570397B1Local interconnect structure including non-eroded contact via trenchesIBM·Filed 2015·Granted Feb 14, 2017·7 cites·14 claims
- 2089US11489111B2Reversible resistive memory logic gate deviceIBM·Filed 2021·Granted Nov 1, 2022·2 cites·20 claims
- 2189US10943990B2Gate contact over active enabled by alternative spacer scheme and claw-shaped capIBM·Filed 2018·Granted Mar 9, 2021·5 cites·15 claims
- 2289US9455254B2Methods of forming a combined gate and source/drain contact structure and the resulting deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 27, 2016·10 cites·23 claims
- 2388US10727317B2Bottom contact formation for vertical transistor devicesIBM·Filed 2018·Granted Jul 28, 2020·4 cites·14 claims
- 2488US9583442B2Interconnect structure including middle of line (MOL) metal layer local interconnect on etch stop layerIBM·Filed 2015·Granted Feb 28, 2017·5 cites·10 claims
- 2587US10312154B2Method of forming vertical FinFET device having self-aligned contactsGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 4, 2019·4 cites·16 claims
- 2687US9960078B1Reflow interconnect using RuIBM·Filed 2017·Granted May 1, 2018·4 cites·15 claims
- 2787US8124525B1Method of forming self-aligned local interconnect and structure formed therebyKOBURGER III CHARLES W·Filed 2010·Granted Feb 28, 2012·12 cites·25 claims
- 2886US11935929B2High aspect ratio shared contactsIBM·Filed 2021·Granted Mar 19, 2024·1 cites·14 claims
- 2986US10832943B2Gate contact over active region with self-aligned source/drain contactIBM·Filed 2019·Granted Nov 10, 2020·4 cites·15 claims
- 3085US11114382B2Middle-of-line interconnect having low metal-to-metal interface resistanceIBM·Filed 2018·Granted Sep 7, 2021·4 cites·10 claims
- 3185US9385123B2STI region for small fin pitch in FinFET devicesIBM·Filed 2014·Granted Jul 5, 2016·6 cites·8 claims
- 3284US10879375B2Gate tie-down enablement with inner spacerIBM·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 3384US8957465B2Formation of the dielectric cap layer for a replacement gate structureGLOBALFOUNFRIES SINGAPORE PTE LTD·Filed 2014·Granted Feb 17, 2015·8 cites·17 claims
- 3483US8796783B2Borderless contact structure employing dual etch stop layersIBM·Filed 2013·Granted Aug 5, 2014·5 cites·20 claims
- 3582US11164778B2Barrier-free vertical interconnect structureIBM·Filed 2019·Granted Nov 2, 2021·3 cites·6 claims
- 3682US10490667B1Three-dimensional field effect deviceIBM·Filed 2018·Granted Nov 26, 2019·2 cites·14 claims
- 3782US7781892B2Interconnect structure and method of fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 24, 2010·12 cites·20 claims
- 3881US11158543B2Silicide formation for source/drain contact in a vertical transport field-effect transistorIBM·Filed 2019·Granted Oct 26, 2021·2 cites·11 claims
- 3980US10497798B2Vertical field effect transistor with self-aligned contactsGLOBALFOUNDRIES INC·Filed 2019·Granted Dec 3, 2019·2 cites·17 claims
- 4079US11222981B2Three-dimensional field effect deviceIBM·Filed 2019·Granted Jan 11, 2022·1 cites·14 claims
- 4179US10615027B1Stack viabar structuresIBM·Filed 2018·Granted Apr 7, 2020·2 cites·20 claims
- 4279US9985027B2Stable multiple threshold voltage devices on replacement metal gate CMOS devicesIBM·Filed 2016·Granted May 29, 2018·2 cites·20 claims
- 4379US9786607B2Interconnect structure including middle of line (MOL) metal layer local interconnect on ETCH stop layerIBM·Filed 2016·Granted Oct 10, 2017·2 cites·10 claims
- 4478US10186599B1Forming self-aligned contact with spacer firstIBM·Filed 2017·Granted Jan 22, 2019·2 cites·17 claims
- 4578US9627257B2Gate tie-down enablement with inner spacerIBM·Filed 2016·Granted Apr 18, 2017·1 cites·20 claims
- 4678US9466680B2Integrated multiple gate length semiconductor device including self-aligned contactsGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 11, 2016·2 cites·17 claims
- 4777US11205590B2Self-aligned contacts for MOLIBM·Filed 2019·Granted Dec 21, 2021·2 cites·8 claims
- 4876US11817502B2Three-dimensional field effect deviceIBM·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 4976US9130029B2Recessing and capping of gate structures with varying metal compositionsGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Sep 8, 2015·3 cites·5 claims
- 5075US10490653B2Embedded bottom metal contact formed by a self-aligned contact process for vertical transistorsIBM·Filed 2018·Granted Nov 26, 2019·1 cites·20 claims
Showing the top 50 of 149 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →