Inventor · disambiguated record
Won-Seok Cho
Also filed as: CHO WON SEOK
52 granted patents·9 pending applications·514 citations·filing 1999–2023
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD36HWANG SUNG-MIN4JEONG JAE-HUN3SAMSUNG DISPLAY CO LTD3LG ELECTRONICS INC2
Top patents by PatentIndex Score
61 records- 0198US8295089B2Non-volatile memory device having vertical structure and method of operating the sameJEONG JAE-HUN·Filed 2010·Granted Oct 23, 2012·140 cites·10 claims
- 0295US9306041B2Vertical type semiconductor devicesHWANG SUNG-MIN·Filed 2014·Granted Apr 5, 2016·22 cites·20 claims
- 0395US7683404B2Stacked memory and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 23, 2010·32 cites·20 claims
- 0494US9299716B2Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 29, 2016·9 cites·20 claims
- 0592US8879321B2Vertical non-volatile memory device and electric-electronic system having the same deviceHWANG SUNG-MIN·Filed 2010·Granted Nov 4, 2014·9 cites·19 claims
- 0691US7602028B2NAND flash memory devices having 3-dimensionally arranged memory cells and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·23 cites·18 claims
- 0790US7719033B2Semiconductor devices having thin film transistors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 18, 2010·20 cites·15 claims
- 0890US6806180B2Unitary interconnection structures integral with a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 19, 2004·52 cites·26 claims
- 0988US9711188B2Vertical non-volatile memory device including plural word line stacksSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 18, 2017·4 cites·16 claims
- 1088US9087861B2Methods of manufacturing a semiconductor deviceHWANG SUNG-MIN·Filed 2014·Granted Jul 21, 2015·8 cites·19 claims
- 1188US8563378B2Manufacturing semiconductor devicesSHIM JAE-JOO·Filed 2011·Granted Oct 22, 2013·9 cites·13 claims
- 1288US7387919B2Methods of fabricating a semiconductor device having a node contact structure of a CMOS inverterSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 17, 2008·18 cites·12 claims
- 1384US9336884B2Non-volatile memory device having vertical structure and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 10, 2016·4 cites·19 claims
- 1481US7417286B2Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·9 cites·11 claims
- 1581US7276421B2Method of forming single crystal semiconductor thin film on insulator and semiconductor device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 2, 2007·9 cites·7 claims
- 1680US9478291B2Non-volatile memory device having vertical structure and method of operating the sameJEONG JAE-HUN·Filed 2016·Granted Oct 25, 2016·2 cites·8 claims
- 1780US7312144B2Unitary interconnection structures integral with a dielectric layer and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 25, 2007·24 cites·21 claims
- 1878US8492831B2Vertical non-volatile memory device and method of fabricating the sameHWANG SUNG-MIN·Filed 2009·Granted Jul 23, 2013·5 cites·17 claims
- 1978US7432560B2Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 7, 2008·8 cites·11 claims
- 2077US10147739B2Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 4, 2018·1 cites·16 claims
- 2177US8343812B2Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·4 cites·9 claims
- 2276US8324675B2Flash memory device having vertical channel structureMOON HUI-CHANG·Filed 2009·Granted Dec 4, 2012·7 cites·20 claims
- 2376US7247528B2Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniquesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·4 cites·33 claims
- 2474US7312110B2Methods of fabricating semiconductor devices having thin film transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 25, 2007·6 cites·50 claims
- 2573US8974858B2Method of depositing organic materialSAMSUNG DISPLAY CO LTD·Filed 2013·Granted Mar 10, 2015·2 cites·20 claims
- 2671US12352703B2Electrode quality evaluation method and electrode manufacturing methodLG ENERGY SOLUTION LTD·Filed 2021·Granted Jul 8, 2025·0 cites·13 claims
- 2771US9881934B2Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 30, 2018·1 cites·10 claims
- 2871US9564221B2Non-volatile memory device having vertical structure and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 7, 2017·1 cites·19 claims
- 2970US11973035B2Semiconductor memory device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 30, 2024·0 cites·20 claims
- 3070US8034668B2Method for forming semiconductor device having metallization comprising select lines, bit lines and word linesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·3 cites·14 claims
- 3169US6430635B1Protocol interfacing methodLG ELECTRONICS INC·Filed 1999·Granted Aug 6, 2002·38 cites·18 claims
- 3268US12298229B2Dry quality evaluation device for electrode and dry quality evaluation method for electrodeLG ENERGY SOLUTION LTD·Filed 2020·Granted May 13, 2025·0 cites·17 claims
- 3368US7554140B2Nand-type non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 30, 2009·3 cites·15 claims
- 3465US11177274B2Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 16, 2021·0 cites·28 claims
- 3564US11652056B2Semiconductor memory device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 3664US8632854B2Substrate centering device and organic material deposition systemSAMSUNG DISPLAY CO LTD·Filed 2013·Granted Jan 21, 2014·1 cites·15 claims
- 3759US7193276B2Semiconductor devices with a source/drain regions formed on a recessed portion of an isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 20, 2007·5 cites·23 claims
- 3858US7601998B2Semiconductor memory device having metallization comprising select lines, bit lines and word linesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·1 cites·10 claims
- 3957US9966115B2Vertical non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 8, 2018·0 cites·11 claims
- 4056US7135746B2SRAM cells having landing pad in contact with upper and lower cell gate patterns and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 14, 2006·4 cites·12 claims
- 4155US2013279233A1Vertical non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 4254US2013044545A1Non-volatile memory device having vertical structure and method of operating the sameJEONG JAE-HUN·Filed 2012·Application pending·0 cites
- 4353US7709323B2Methods of forming nand-type nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 4, 2010·0 cites·11 claims
- 4453US7170133B2Transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 30, 2007·4 cites·9 claims
- 4552US7485535B2Methods of fabricating semiconductor devices with a source/drain formed on a recessed portion of an isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 3, 2009·0 cites·29 claims
- 4652US7276404B2Methods of forming SRAM cells having landing pad in contact with upper and lower cell gate patternsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 2, 2007·3 cites·12 claims
- 4751US2022336711A1Light-emitting element and display device including the sameSAMSUNG DISPLAY CO LTD·Filed 2022·Application pending·0 cites
- 4850US2007241335A1Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques and semiconductor integrated circuits fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4949US7563683B2Transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 21, 2009·0 cites·17 claims
- 5049US2014048873A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
Showing the top 50 of 61 patent records by PatentIndex Score.
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