Inventor · disambiguated record
H. Peter W. Hey
Also filed as: HEY H PETER W
18 granted patents·4 pending applications·1,699 citations·filing 1989–2003
96Inventor score
Top patents by PatentIndex Score
22 records- 0196US5551982ASemiconductor wafer process chamber with susceptor back coatingAPPLIED MATERIALS INC·Filed 1994·Granted Sep 3, 1996·136 cites·22 claims
- 0296US4987856AHigh throughput multi station processor for multiple single wafersADVANCED SEMICONDUCTOR MAT·Filed 1989·Granted Jan 29, 1991·706 cites·27 claims
- 0395US5899752AMethod for in-situ cleaning of native oxide from silicon surfacesAPPLIED MATERIALS INC·Filed 1995·Granted May 4, 1999·288 cites·5 claims
- 0493US6881318B2Dynamic pulse plating for high aspect ratio featuresAPPLIED MATERIALS INC·Filed 2001·Granted Apr 19, 2005·38 cites·21 claims
- 0592US5421957ALow temperature etching in cold-wall CVD systemsAPPLIED MATERIALS INC·Filed 1993·Granted Jun 6, 1995·109 cites·22 claims
- 0688US6585876B2Flow diffuser to be used in electro-chemical plating system and methodAPPLIED MATERIALS INC·Filed 2000·Granted Jul 1, 2003·35 cites·38 claims
- 0788US6551488B1Segmenting of processing system into wet and dry areasAPPLIED MATERIALS INC·Filed 2000·Granted Apr 22, 2003·37 cites·31 claims
- 0886US6837978B1Deposition uniformity control for electroplating apparatus, and associated methodAPPLIED MATERIALS INC·Filed 2000·Granted Jan 4, 2005·36 cites·30 claims
- 0984US6551484B2Reverse voltage bias for electro-chemical plating system and methodAPPLIED MATERIALS INC·Filed 2001·Granted Apr 22, 2003·29 cites·30 claims
- 1084US6514671B1Interconnect line formed by dual damascene using dielectric layers having dissimilar etching characteristicsAPPLIED MATERIALS INC·Filed 2000·Granted Feb 4, 2003·39 cites·14 claims
- 1184US5599397ASemiconductor wafer process chamber with suspector back coatingAPPLIED MATERIALS INC·Filed 1996·Granted Feb 4, 1997·43 cites·10 claims
- 1281US7427338B2Flow diffuser to be used in electro-chemical plating systemAPPLIED MATERIALS INC·Filed 2003·Granted Sep 23, 2008·21 cites·2 claims
- 1378US5482739ASilicon nitride depositionAPPLIED MATERIALS INC·Filed 1995·Granted Jan 9, 1996·47 cites·11 claims
- 1476US5834059AProcess of depositing a layer of material on a wafer with susceptor back coatingAPPLIED MATERIALS INC·Filed 1996·Granted Nov 10, 1998·29 cites·16 claims
- 1568US5091217AMethod for processing wafers in a multi station common chamber reactorADVANCED SEMICONDUCTOR MAT·Filed 1990·Granted Feb 25, 1992·51 cites·29 claims
- 1662US6022587AMethod and apparatus for improving film deposition uniformity on a substrateAPPLIED MATERIALS INC·Filed 1997·Granted Feb 8, 2000·20 cites·20 claims
- 1759US6130105ADeposition rate control on wafers with varying characteristicsAPPLIED MATERIALS INC·Filed 1997·Granted Oct 10, 2000·21 cites·11 claims
- 1859US5725673ASemiconductor wafer process chamber with susceptor back coatingAPPLIED MATERIALS INC·Filed 1996·Granted Mar 10, 1998·14 cites·7 claims
- 1942US2003168346A1Segmenting of processing system into wet and dry areasAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 2038US2004020780A1Immersion bias for use in electro-chemical plating systemFiled 2003·Application pending·0 cites
- 2138US2003092266A1Gas inlets for wafer processing chamberFiled 2003·Application pending·0 cites
- 2230US2002020358A1Method and apparatus for improving film deposition uniformity on a substrateFiled 1999·Application pending·0 cites
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