Inventor · disambiguated record
Tat Ngai
Also filed as: NGAI TAT
3 granted patents·6 pending applications·109 citations·filing 2001–2015
71Inventor score
Top patents by PatentIndex Score
9 records- 0193US6518106B2Semiconductor device and a method thereforMOTOROLA INC·Filed 2001·Granted Feb 11, 2003·100 cites·12 claims
- 0278US8039877B2(110)-oriented p-channel trench MOSFET having high-K gate dielectricFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Oct 18, 2011·7 cites·25 claims
- 0360US8237195B2Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrateNGAI TAT·Filed 2008·Granted Aug 7, 2012·2 cites·22 claims
- 0441US2012196414A1Power MOSFET Having a Strained Channel in a Semiconductor Heterostructure on Metal SubstrateNGAI TAT·Filed 2012·Application pending·0 cites
- 0540US2006076046A1Thermoelectric device structure and apparatus incorporating sameNANOCOOLERS INC·Filed 2005·Application pending·0 cites
- 0637US2005150535A1Method for forming a thin-film thermoelectric device including a phonon-blocking thermal conductorNANOCOOLERS INC·Filed 2004·Application pending·0 cites
- 0737US2005150539A1Monolithic thin-film thermoelectric device including complementary thermoelectric materialsNANOCOOLERS INC·Filed 2004·Application pending·0 cites
- 0837US2005150536A1Method for forming a monolithic thin-film thermoelectric device including complementary thermoelectric materialsNANOCOOLERS INC·Filed 2004·Application pending·0 cites
- 0931US2015340228A1Germanium-containing semiconductor device and method of formingTOKYO ELECTRON LTD·Filed 2015·Application pending·0 cites
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