Assignee
NGAI TAT
US·1 granted patent·1 pending application·2 citations·filing 2008–2012
Top patents by PatentIndex Score
2 records- 0160US8237195B2Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrateNGAI TAT·Filed 2008·Granted Aug 7, 2012·2 cites·22 claims
- 0241US2012196414A1Power MOSFET Having a Strained Channel in a Semiconductor Heterostructure on Metal SubstrateNGAI TAT·Filed 2012·Application pending·0 cites
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