Inventor · disambiguated record
Yoshinobu Nakatani
Also filed as: NAKATANI YOSHINOBU
6 granted patents·1 pending application·34 citations·filing 2004–2019
79Inventor score
Files withINFINEON TECHNOLOGIES AG2UNIV KYOTO2ALTIS SEMICONDUCTOR SNC1MILTAT JACQUES1SAMSUNG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
7 records- 0191US10840435B2Magnetic tunnel junction device and magnetic resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 17, 2020·4 cites·20 claims
- 0275US7630231B2Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cellINFINEON TECHNOLOGIES AG·Filed 2007·Granted Dec 8, 2009·11 cites·25 claims
- 0367US7061797B1Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cellALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Jun 13, 2006·14 cites·6 claims
- 0461US7952915B2Core-rotating element of ferromagnetic dot and information memory element using the core of ferromagnetic dotUNIV KYOTO·Filed 2007·Granted May 31, 2011·5 cites·21 claims
- 0536US7315467B2Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cellINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jan 1, 2008·0 cites·7 claims
- 0635US8345473B2Ferromagnetic thin wire elementUNIV KYOTO·Filed 2008·Granted Jan 1, 2013·0 cites·18 claims
- 0733US2006146598A1Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cellMILTAT JACQUES·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →