Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell

Abstract

The present invention relates to a magnetoresistive hybrid memory cell comprising a first stacked structure comprising a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein said first magnetic region being provided with a fixed first magnetic moment vector and said second magnetic region being provided with a free second magnetic moment vector which is free to be switched between the same and opposite directions with respect to said fixed first magnetic moment vector of said first magnetic region, a second stacked structure being at least partly arranged in a lateral relationship as to said first stacked structure and comprising a third magnetic region being provided with a fixed third magnetic moment vector and said second magnetic region; wherein said first and second structures being arranged in between at least two electrodes in electrical contact therewith. It further relates to a method of writing to and reading of a magnetoresistive hybrid memory cell, wherein a writing voltage pulse is applied to electrodes on both sides of only said second structure, and wherein a reading voltage pulse is applied to electrodes on both sides of only said first structure.

1 . A method of writing to and reading of a magnetoresistive hybrid memory cell, comprising the following steps: 
 providing of a magnetoresistive hybrid memory cell comprising:    a first stacked structure comprising a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein said first magnetic region being provided with a fixed first magnetic moment vector and said second magnetic region being provided with a second free magnetic moment vector which is free to be switched between the same and opposite directions with respect to said fixed first magnetic moment vector of said first magnetic region;    a second stacked structure being arranged in a lateral relationship to said first stacked structure and comprising a third magnetic region being provided with a fixed third magnetic moment vector and said second magnetic region; wherein said first and second structures being arranged in between at least two electrodes in electrical contact therewith;    applying of a writing voltage pulse resulting in a writing current pulse flowing trough said second magnetic region for switching of its free magnetic moment vector to electrodes on both sides of only said second structure;    applying of a reading voltage pulse resulting in a reading current pulse flowing through said magnetic tunnel junction to electrodes on both sides of only said first structure.    
   
   
       2 . The method of switching a magnetoresistive hybrid memory cell as claimed in  claim 7 , wherein said writing voltage pulse is applied adapted to result in a coherent rotation over half a full turn in total.  
   
   
       3 . A method of writing to and reading of a magnetoresistive hybrid memory cell, comprising the following steps: 
 providing of a magnetoresistive hybrid memory cell comprising: a first stacked structure comprising a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein said first magnetic region being provided with a fixed first magnetic moment vector and said second magnetic region being provided with a second free magnetic moment vector which is free to be switched between the same and opposite directions with respect to said fixed first magnetic moment vector of said first magnetic region;    a second stacked structure being at least partly arranged in a lateral relationship to said first stacked structure and comprising a third magnetic region being provided with a fixed third magnetic moment vector and said second magnetic region; wherein said first and second structures being arranged in between at least two electrodes in electrical contact therewith;    applying of a writing voltage pulse resulting in a writing current pulse flowing trough said second magnetic region for switching of its free magnetic moment vector to electrodes on both sides of only said second structure, wherein said switching voltage pulse is applied adapted to result in a coherent rotation over half a full turn in total having a slow rise time and a fast fall time;    applying of a reading voltage pulse resulting in a reading current pulse flowing through said magnetic tunnel junction to electrodes on both sides of only said first structure.    
   
   
       4 . The method as claimed in  claim 7 , wherein said fixed magnetic moment vector of said third magnetic region being perpendicularly aligned to said free magnetic moment vector of said second magnetic region.  
   
   
       5 . The method as claimed in  claim 7 , wherein one of said electrodes arranged on one side of said first and second structures is a common electrode connecting said first and second structures.  
   
   
       6 . The method as claimed in claim  11 , wherein said common electrode is positioned adjacent said second magnetic region.  
   
   
       7 . The method as claimed in claim  12 , wherein separate electrodes for each one of said first and second structures are provided on the other side of said first and second structures.  
   
   
       8 . The magnetoresistive hybrid memory cell as claimed in  claim 7 , wherein separate electrodes for each one of said first and second structures are provided on both sides of said first and second structures.