Inventor · disambiguated record
Li-Shian Jeng
Also filed as: JENG LI-SHIAN
22 granted patents·12 pending applications·158 citations·filing 2005–2011
95Inventor score
Top patents by PatentIndex Score
34 records- 0195US7288822B1Semiconductor structure and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Oct 30, 2007·48 cites·14 claims
- 0291US7700450B2Method for forming MOS transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Apr 20, 2010·18 cites·45 claims
- 0388US7524716B2Fabricating method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 28, 2009·16 cites·8 claims
- 0487US7622344B2Method of manufacturing complementary metal oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2007·Granted Nov 24, 2009·14 cites·22 claims
- 0587US7410875B2Semiconductor structure and fabrication thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Aug 12, 2008·12 cites·21 claims
- 0685US7618856B2Method for fabricating strained-silicon CMOS transistorsUNITED MICROELECTRONICS CORP·Filed 2006·Granted Nov 17, 2009·13 cites·21 claims
- 0775US7875520B2Method of forming CMOS transistorUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jan 25, 2011·6 cites·17 claims
- 0872US7888194B2Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Feb 15, 2011·3 cites·10 claims
- 0972US7888223B2Method for fabricating P-channel field-effect transistor (FET)UNITED MICROELECTRONICS CORP·Filed 2007·Granted Feb 15, 2011·3 cites·17 claims
- 1071US7494878B2Metal-oxide-semiconductor transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 24, 2009·4 cites·14 claims
- 1169US7485517B2Fabricating method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 3, 2009·3 cites·5 claims
- 1268US7642166B2Method of forming metal-oxide-semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jan 5, 2010·3 cites·20 claims
- 1366US8222113B2Method of forming MOS deviceTING SHYH-FANN·Filed 2009·Granted Jul 17, 2012·3 cites·13 claims
- 1463US7453120B2Semiconductor structureUNITD MICROELECTRONICS CORP·Filed 2007·Granted Nov 18, 2008·3 cites·13 claims
- 1562US8664073B2Method for fabricating field-effect transistorLEE KUN-HSIEN·Filed 2011·Granted Mar 4, 2014·2 cites·19 claims
- 1662US7682890B2Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Mar 23, 2010·2 cites·10 claims
- 1762US7585790B2Method for forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Sep 8, 2009·2 cites·17 claims
- 1861US7927954B2Method for fabricating strained-silicon metal-oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 19, 2011·2 cites·27 claims
- 1957US7928512B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 19, 2011·1 cites·5 claims
- 2053US8039330B2Method for manufacturing semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Oct 18, 2011·0 cites·8 claims
- 2148US2011254064A1Semiconductor device with carbon atoms implanted under gate structureUNITED MICROELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 2247US2011104864A1Method of fabricating semiconductor deviceJENG LI-SHIAN·Filed 2011·Application pending·0 cites
- 2347US2009166625A1Mos device structureUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 2446US2011156156A1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 2541US7582520B2Method of fabricating complementary metal-oxide-semiconductor transistor and metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Sep 1, 2009·0 cites·27 claims
- 2641US2011097868A1Method for fabricating p-channel field-effect transistor (fet)LEE KUN-HSIEN·Filed 2011·Application pending·0 cites
- 2740US7294541B2Method of fabricating gate dielectric layer and method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Nov 13, 2007·0 cites·20 claims
- 2840US2007275530A1Semiconductor structure and fabricating method thereofHUNG WEN-HAN·Filed 2006·Application pending·0 cites
- 2940US2008179684A1Method of fabricating a strained silicon channel complementary metal oxide semiconductor transistor and structure thereofLIANG CHIA-WEN·Filed 2007·Application pending·0 cites
- 3039US2009224328A1Semiconductor deviceTING SHYH-FANN·Filed 2008·Application pending·0 cites
- 3139US2009186475A1Method of manufacturing a MOS transistorTING SHYH-FANN·Filed 2008·Application pending·0 cites
- 3239US2008237734A1Complementary metal-oxide-semiconductor transistor and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 3335US2009117701A1Method for manufacturing a mos transistorWU MENG-YI·Filed 2007·Application pending·0 cites
- 3435US2008242017A1Method of manufacturing semiconductor mos transistor devicesLEE KUN-HSIEN·Filed 2007·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →