Inventor · disambiguated record
James R. Elliott
Also filed as: ELLIOTT JAMES R · ELLIOTT JAMES RANDALL
16 granted patents·69 citations·filing 2003–2020
92Inventor score
Top patents by PatentIndex Score
16 records- 0191US10217852B1Heterojunction bipolar transistors with a controlled undercut formed beneath the extrinsic baseGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·6 cites·20 claims
- 0289US9240448B2Bipolar junction transistors with reduced base-collector junction capacitanceIBM·Filed 2015·Granted Jan 19, 2016·5 cites·9 claims
- 0388US11362201B1Heterojunction bipolar transistors with undercut extrinsic base regionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
- 0486US9093491B2Bipolar junction transistors with reduced base-collector junction capacitanceIBM·Filed 2012·Granted Jul 28, 2015·7 cites·13 claims
- 0584US7804151B2Integrated circuit structure, design structure, and method having improved isolation and harmonicsIBM·Filed 2008·Granted Sep 28, 2010·13 cites·20 claims
- 0681US9274277B2Waveguide devices with supporting anchorsIBM·Filed 2014·Granted Mar 1, 2016·3 cites·20 claims
- 0779US7927963B2Integrated circuit structure, design structure, and method having improved isolation and harmonicsIBM·Filed 2008·Granted Apr 19, 2011·9 cites·7 claims
- 0878US9059234B2Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation regionIBM·Filed 2013·Granted Jun 16, 2015·3 cites·19 claims
- 0972US7446007B2Multi-layer spacer with inhibited recess/undercut and method for fabrication thereofIBM·Filed 2006·Granted Nov 4, 2008·5 cites·13 claims
- 1066US9231087B2Bipolar junction transistors with self-aligned terminalsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 5, 2016·1 cites·9 claims
- 1163US6838396B2Bilayer ultra-thin gate dielectric and process for semiconductor metal contamination reductionIBM·Filed 2003·Granted Jan 4, 2005·8 cites·12 claims
- 1262US7888142B2Copper contamination detection method and system for monitoring copper contaminationIBM·Filed 2007·Granted Feb 15, 2011·1 cites·15 claims
- 1358US7342290B2Semiconductor metal contamination reduction for ultra-thin gate dielectricsIBM·Filed 2004·Granted Mar 11, 2008·6 cites·12 claims
- 1450US9224843B2Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation regionIBM·Filed 2015·Granted Dec 29, 2015·0 cites·20 claims
- 1545US7957917B2Copper contamination detection method and system for monitoring copper contaminationIBM·Filed 2007·Granted Jun 7, 2011·0 cites·18 claims
- 1640US8236580B2Copper contamination detection method and system for monitoring copper contaminationBURNHAM JAY SANFORD·Filed 2010·Granted Aug 7, 2012·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →