Inventor · disambiguated record
Ryu Ogiwara
Also filed as: OGIWARA RYU
74 granted patents·11 pending applications·549 citations·filing 1994–2025
99Inventor score
Top patents by PatentIndex Score
85 records- 0197US8514627B2Nonvolatile semiconductor memory deviceITAGAKI KIYOTARO·Filed 2011·Granted Aug 20, 2013·38 cites·20 claims
- 0295US9966136B2Semiconductor memory device including variable resistance elementTOSHIBA MEMORY CORP·Filed 2017·Granted May 8, 2018·12 cites·16 claims
- 0395US9437307B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2014·Granted Sep 6, 2016·17 cites·11 claims
- 0493US11765916B2Memory device and method of manufacturing memory deviceKIOXIA CORP·Filed 2021·Granted Sep 19, 2023·2 cites·22 claims
- 0591US7679412B2Power supply circuitTOSHIBA KK·Filed 2008·Granted Mar 16, 2010·25 cites·15 claims
- 0689US8873296B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2013·Granted Oct 28, 2014·9 cites·7 claims
- 0789US7233536B2Semiconductor memory device having memory cells to store cell data and reference dataTOSHIBA KK·Filed 2005·Granted Jun 19, 2007·21 cites·17 claims
- 0888US8531901B2Three dimensional NAND type memory device having selective charge pump activation to minimize noiseOGIWARA RYU·Filed 2011·Granted Sep 10, 2013·12 cites·10 claims
- 0988US6473330B1Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuitTOSHIBA KK·Filed 2000·Granted Oct 29, 2002·32 cites·16 claims
- 1084US11120866B1Memory deviceKIOXIA CORP·Filed 2020·Granted Sep 14, 2021·2 cites·15 claims
- 1183US2025344407A1Memory device with memory strings using variable resistance memory regionsKIOXIA CORP·Filed 2025·Application pending·0 cites
- 1280US6898104B2Semiconductor device having semiconductor memory with sense amplifierINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 24, 2005·25 cites·10 claims
- 1377US12069872B2Memory device and method of manufacturing memory deviceKIOXIA CORP·Filed 2023·Granted Aug 20, 2024·0 cites·16 claims
- 1477US6023438ASemiconductor memory device for reading charges stored in capacitor in memory cell and data reading method thereofTOSHIBA KK·Filed 1998·Granted Feb 8, 2000·33 cites·27 claims
- 1576US7589513B2Reference voltage generator circuitTOSHIBA KK·Filed 2007·Granted Sep 15, 2009·9 cites·11 claims
- 1676US5892724ANAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit linesTOSHIBA KK·Filed 1997·Granted Apr 6, 1999·32 cites·10 claims
- 1774US5418750ASemiconductor memory device for suppressing noises occurring on bit and word linesTOSHIBA KK·Filed 1994·Granted May 23, 1995·34 cites·15 claims
- 1873US10410720B2Multi-layer resistive memory device with variable resistance elementsTOSHIBA MEMORY CORP·Filed 2017·Granted Sep 10, 2019·2 cites·9 claims
- 1973US7746164B2Voltage generating circuitTOSHIBA KK·Filed 2008·Granted Jun 29, 2010·8 cites·5 claims
- 2072US9607693B2Semiconductor storage deviceTOSHIBA KK·Filed 2015·Granted Mar 28, 2017·3 cites·20 claims
- 2172US9460785B2Semiconductor storage deviceTOSHIBA KK·Filed 2014·Granted Oct 4, 2016·4 cites·19 claims
- 2272US7053431B2Phase-change memory device using chalcogenide compound as the material of memory cellsTOSHIBA KK·Filed 2004·Granted May 30, 2006·16 cites·9 claims
- 2372US6671200B2Ferroelectric random access memory with isolation transistors coupled between a sense amplifier and an equalization circuitTOSHIBA KK·Filed 2003·Granted Dec 30, 2003·12 cites·15 claims
- 2471US7795953B2Voltage step-down circuitTOSHIBA KK·Filed 2008·Granted Sep 14, 2010·7 cites·12 claims
- 2571US7046541B2Semiconductor integrated circuit deviceTOSHIBA KK·Filed 2004·Granted May 16, 2006·17 cites·17 claims
- 2670US12389610B2Memory device with memory strings using variable resistance memory regionsKIOXIA CORP·Filed 2022·Granted Aug 12, 2025·0 cites·13 claims
- 2770US7295456B2Chain ferroelectric random access memory (CFRAM) having an intrinsic transistor connected in parallel with a ferroelectric capacitorTOSHIBA KK·Filed 2006·Granted Nov 13, 2007·4 cites·5 claims
- 2870US7057917B2Ferroelectric memory with an intrinsic access transistor coupled to a capacitorTOSHIBA KK·Filed 2003·Granted Jun 6, 2006·10 cites·6 claims
- 2968US7092304B2Semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 15, 2006·15 cites·20 claims
- 3067US7633330B2Reference voltage generation circuitTOSHIBA KK·Filed 2007·Granted Dec 15, 2009·5 cites·7 claims
- 3166US7142473B2Semiconductor device having semiconductor memory with sense amplifierINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 28, 2006·5 cites·9 claims
- 3265US9311996B2Semiconductor storage device having resistance-change storage elementsTOSHIBA KK·Filed 2015·Granted Apr 12, 2016·2 cites·19 claims
- 3364US7426147B2Power supply voltage control circuitTOSHIBA KK·Filed 2006·Granted Sep 16, 2008·5 cites·20 claims
- 3463US7816976B2Power supply circuit using insulated-gate field-effect transistorsTOSHIBA KK·Filed 2008·Granted Oct 19, 2010·5 cites·13 claims
- 3563US7061788B2Semiconductor storage deviceTOSHIBA KK·Filed 2005·Granted Jun 13, 2006·5 cites·19 claims
- 3663US6288961B1Semiconductor memory device for reading charges stored in capacitor in memory cell and data reading method thereofTOSHIBA KK·Filed 1999·Granted Sep 11, 2001·18 cites·4 claims
- 3763US6111777AFerroelectric memoryTOSHIBA KK·Filed 1999·Granted Aug 29, 2000·22 cites·7 claims
- 3861US8159285B2Current supply circuitHIOKA TAKESHI·Filed 2010·Granted Apr 17, 2012·2 cites·20 claims
- 3961US5625602ANAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit linesTOSHIBA KK·Filed 1995·Granted Apr 29, 1997·18 cites·6 claims
- 4060US7902913B2Reference voltage generation circuitTOSHIBA KK·Filed 2009·Granted Mar 8, 2011·3 cites·5 claims
- 4160US7852142B2Reference voltage generating circuit for use of integrated circuitTOSHIBA KK·Filed 2008·Granted Dec 14, 2010·4 cites·7 claims
- 4260US7750723B2Voltage generation circuit provided in a semiconductor integrated deviceTOSHIBA KK·Filed 2007·Granted Jul 6, 2010·4 cites·17 claims
- 4360US7733683B2Semiconductor memory deviceTOSHIBA KK·Filed 2008·Granted Jun 8, 2010·4 cites·14 claims
- 4460US7411809B2Ferroelectric memory to be tested by applying disturbance voltage to a plurality of ferroelectric capacitors at once in direction to weaken polarization, and method of testing the sameTOSHIBA KK·Filed 2006·Granted Aug 12, 2008·4 cites·16 claims
- 4558US6552922B2Chain-type ferroelectric random access memory (FRAM) with rewrite transistors coupled between a sense amplifier and a bit line pairTOSHIBA KK·Filed 2002·Granted Apr 22, 2003·6 cites·3 claims
- 4658US2020403035A1Memory deviceKIOXIA CORP·Filed 2020·Application pending·0 cites
- 4756US9412449B2Semiconductor storage deviceTOSHIBA KK·Filed 2015·Granted Aug 9, 2016·1 cites·20 claims
- 4855US7763991B2Voltage generating circuitTOSHIBA KK·Filed 2008·Granted Jul 27, 2010·3 cites·14 claims
- 4954US11744088B2Memory deviceKIOXIA CORP·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 5054US9418740B2Semiconductor storage device writing data into memory cells using a half selected state and a write stateTOSHIBA KK·Filed 2015·Granted Aug 16, 2016·1 cites·20 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →