Inventor · disambiguated record
Scott Beasor
Also filed as: BEASOR SCOTT · BEASOR SCOTT H · BEASOR SCOTT HOWARD
33 granted patents·7 pending applications·114 citations·filing 2012–2020
96Inventor score
Top patents by PatentIndex Score
40 records- 0196US10373877B1Methods of forming source/drain contact structures on integrated circuit productsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·18 cites·20 claims
- 0296US9812453B1Self-aligned sacrificial epitaxial capping for trench silicideGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 7, 2017·22 cites·14 claims
- 0395US10326002B1Self-aligned gate contact and cross-coupling contact formationGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 18, 2019·11 cites·11 claims
- 0489US9984933B1Silicon liner for STI CMP stop in FinFETGLOBALFOUNDRIES INC·Filed 2017·Granted May 29, 2018·7 cites·20 claims
- 0589US9397004B2Methods for fabricating FinFET integrated circuits with simultaneous formation of local contact openingsGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 19, 2016·10 cites·14 claims
- 0686US10043708B2Structure and method for capping cobalt contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 7, 2018·4 cites·14 claims
- 0784US10586736B2Hybrid fin cut with improved fin profilesGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 10, 2020·4 cites·19 claims
- 0883US10049944B2Method of manufacturing selective nanostructures into finFET process flowGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 14, 2018·4 cites·8 claims
- 0983US9330971B2Method for fabricating integrated circuits including contacts for metal resistorsGLOBALFOUNDRIES INC·Filed 2014·Granted May 3, 2016·6 cites·19 claims
- 1081US10872979B2Spacer structures for a transistor deviceGLOBALFOUNDRIES INC·Filed 2020·Granted Dec 22, 2020·1 cites·17 claims
- 1180US10580701B1Methods of making a self-aligned gate contact structure and source/drain metallization structures on integrated circuit productsGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 3, 2020·2 cites·16 claims
- 1279US10707175B2Asymmetric overlay mark for overlay measurementGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 7, 2020·3 cites·19 claims
- 1379US10403742B2Field-effect transistors with fins formed by a damascene-like processGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 3, 2019·2 cites·14 claims
- 1478US10629694B1Gate contact and cross-coupling contact formationGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 21, 2020·2 cites·20 claims
- 1578US9419082B2Source/drain profile engineering for enhanced p-MOSFETGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 16, 2016·4 cites·5 claims
- 1677US10879180B2FinFET with etch-selective spacer and self-aligned contact capping layerGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 29, 2020·2 cites·13 claims
- 1777US10475890B2Scaled memory structures or other logic devices with middle of the line cutsGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 12, 2019·2 cites·14 claims
- 1877US10361289B1Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 23, 2019·2 cites·18 claims
- 1972US10629739B2Methods of forming spacers adjacent gate structures of a transistor deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 21, 2020·1 cites·19 claims
- 2071US10804379B2FinFET device and method of manufacturingGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 13, 2020·1 cites·5 claims
- 2170US10832966B2Methods and structures for a gate cutGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 10, 2020·1 cites·11 claims
- 2270US10818557B2Integrated circuit structure to reduce soft-fail incidence and method of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 27, 2020·1 cites·19 claims
- 2370US10741556B2Self-aligned sacrificial epitaxial capping for trench silicideGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 11, 2020·1 cites·12 claims
- 2469US10818659B2FinFET having upper spacers adjacent gate and source/drain contactsGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 27, 2020·1 cites·20 claims
- 2568US10832965B2Fin reveal forming STI regions having convex shape between finsGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 10, 2020·1 cites·14 claims
- 2663US10763176B2Transistor with a gate structure comprising a tapered upper surfaceGLOBALFOUNDRIES INC·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
- 2756US8962485B2Reusing active area mask for trench transfer exposureGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 24, 2015·1 cites·20 claims
- 2856US2019273148A1Field-effect transistors with fins formed by a damascene-like processGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 2952US10833067B1Metal resistor structure in at least one cavity in dielectric over TS contact and gate structureGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 3051US10832839B1Metal resistors with a non-planar configurationGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 3150US10797049B2FinFET structure with dielectric bar containing gate to reduce effective capacitance, and method of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 6, 2020·0 cites·17 claims
- 3250US2018277427A1Structure and method for capping cobalt contactsGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
- 3348US10522644B1Different upper and lower spacers for contactGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 31, 2019·0 cites·19 claims
- 3447US10636890B2Chamfered replacement gate structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 28, 2020·0 cites·19 claims
- 3545US10600914B2Isolation pillar first gate structures and methods of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 24, 2020·0 cites·19 claims
- 3641US2020303247A1Semiconductor structures with a protective liner and methods of forming the sameGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 3741US2014183720A1Methods of manufacturing integrated circuits having a compressive nitride layerGLOBALFOUNDRIES INC·Filed 2012·Application pending·0 cites
- 3840US2019221483A1Single work function enablement for silicon nanowire deviceGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
- 3936US2017338180A1Method of making vertical and bottom bias e-fuses and related devicesGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 4034US2016254345A1Metal-insulator-metal capacitor architectureGLOBAL FOUNDRIES INC·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →