Inventor · disambiguated record
Ryuichi Toba
Also filed as: TOBA RYUICHI
23 granted patents·5 pending applications·83 citations·filing 1999–2022
93Inventor score
Files withCHO MEOUNG WHAN8DOWA MINING CO5DOWA ELECTRONICS MATERIALS CO LTD4TOBA RYUICHI3WAVESQUARE INC3
Top patents by PatentIndex Score
28 records- 0187US6450567B2Structure of rear portion of automotive vehicle bodyNISSAN MOTOR·Filed 2001·Granted Sep 17, 2002·43 cites·16 claims
- 0277US9184338B2Semiconductor device and method of manufacturing the sameCHO MEOUNG WHAN·Filed 2011·Granted Nov 10, 2015·4 cites·13 claims
- 0373US7256478B2Notched compound semiconductor waferDOWA MINING CO·Filed 2005·Granted Aug 14, 2007·4 cites·5 claims
- 0470US7256476B2Notched compound semiconductor waferDOWA MINING CO·Filed 2005·Granted Aug 14, 2007·3 cites·5 claims
- 0565US9502603B2Vertically structured group III nitride semiconductor LED chip and method for manufacturing the sameCHO MEOUNG WHAN·Filed 2011·Granted Nov 22, 2016·1 cites·7 claims
- 0663US8921227B2Semiconductor device assembly and semiconductor device and method of manufacturing the sameDOWA ELECTRONICS MATERIALS CO LTD·Filed 2013·Granted Dec 30, 2014·1 cites·13 claims
- 0760US8216869B2Group III nitride semiconductor and a manufacturing method thereofYAO TAKAFUMI·Filed 2008·Granted Jul 10, 2012·1 cites·17 claims
- 0859US8963290B2Semiconductor device and manufacturing method thereforTOBA RYUICHI·Filed 2010·Granted Feb 24, 2015·1 cites·13 claims
- 0959US8962362B2Vertically structured group III nitride semiconductor LED chip and method for manufacturing the sameCHO MEOUNG WHAN·Filed 2009·Granted Feb 24, 2015·1 cites·5 claims
- 1057US12467160B2GaAs wafer and method of producing GaAs ingotDOWA ELECTRONICS MATERIALS CO LTD·Filed 2021·Granted Nov 11, 2025·0 cites·10 claims
- 1155US9537053B2III nitride semiconductor device and method of manufacturing the sameBBSA LTD·Filed 2012·Granted Jan 3, 2017·1 cites·3 claims
- 1255US9012935B2Vertically structured group III nitride semiconductor LED chip and method for manufacturing the sameWAVESQUARE INC·Filed 2013·Granted Apr 21, 2015·0 cites·4 claims
- 1354US2024392475A1Gaas wafer, gaas wafer group, and method of producing gaas ingotDOWA ELECTRONICS MATERIALS CO LTD·Filed 2022·Application pending·0 cites
- 1453US12349473B2Ultraviolet light receiving deviceDOWA HOLDINGS CO LTD·Filed 2021·Granted Jul 1, 2025·0 cites·2 claims
- 1553US6998700B2Notched compound semiconductor waferDOWA MINING CO·Filed 2002·Granted Feb 14, 2006·4 cites·5 claims
- 1649US2023243067A1GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFERDOWA ELECTRONICS MATERIALS CO LTD·Filed 2021·Application pending·0 cites
- 1748US7256477B2Notched compound semiconductor waferDOWA MINING CO·Filed 2005·Granted Aug 14, 2007·0 cites·5 claims
- 1848US2013137246A1Method of producing group iii nitride semiconductor growth substrateDOWA HOLDINGS CO LTD·Filed 2013·Application pending·0 cites
- 1947US8736025B2III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinityTOBA RYUICHI·Filed 2009·Granted May 27, 2014·0 cites·8 claims
- 2046USD703863SLighting elementsWAVESQUARE INC·Filed 2013·Granted Apr 29, 2014·6 cites·1 claims
- 2143US8878189B2Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the sameTOBA RYUICHI·Filed 2010·Granted Nov 4, 2014·0 cites·8 claims
- 2241USD711583SLighting elementCHO MEOUNG WHAN·Filed 2012·Granted Aug 19, 2014·4 cites·1 claims
- 2341US2014217457A1Light-emitting element chip and manufacturing method thereforCHO MEOUNG WHAN·Filed 2011·Application pending·0 cites
- 2438USD711581SLighting elementCHO MEOUNG WHAN·Filed 2012·Granted Aug 19, 2014·3 cites·1 claims
- 2538US2015187887A1Iii nitride semiconductor device and method of manufacturing the sameCHO MEOUNG WHAN·Filed 2012·Application pending·0 cites
- 2635US6336970B1Surface preparation method and semiconductor deviceDOWA MINING CO·Filed 1999·Granted Jan 8, 2002·5 cites·8 claims
- 2730USD703862SLighting elementsWAVESQUARE INC·Filed 2013·Granted Apr 29, 2014·1 cites·1 claims
- 2828USD711582SLighting elementCHO MEOUNG WHAN·Filed 2012·Granted Aug 19, 2014·0 cites·1 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →