Assignee
TOBA RYUICHI
JP·3 granted patents·1 citations·filing 2009–2010
Top patents by PatentIndex Score
3 records- 0159US8963290B2Semiconductor device and manufacturing method thereforTOBA RYUICHI·Filed 2010·Granted Feb 24, 2015·1 cites·13 claims
- 0247US8736025B2III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinityTOBA RYUICHI·Filed 2009·Granted May 27, 2014·0 cites·8 claims
- 0343US8878189B2Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the sameTOBA RYUICHI·Filed 2010·Granted Nov 4, 2014·0 cites·8 claims
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