Inventor · disambiguated record
Frank Wirbeleit
Also filed as: WIRBELEIT FRANK · WIRBELEIT FRANK W
26 granted patents·7 pending applications·437 citations·filing 2005–2012
96Inventor score
Files withADVANCED MICRO DEVICES INC10WIRBELEIT FRANK9GLOBALFOUNDRIES INC8FLACHOWSKY STEFAN2MIKALO RICARDO P1
Top patents by PatentIndex Score
33 records- 0198US8183096B2Static RAM cell design and multi-contact regime for connecting double channel transistorsWIRBELEIT FRANK·Filed 2009·Granted May 22, 2012·120 cites·6 claims
- 0296US7410859B1Stressed MOS device and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2005·Granted Aug 12, 2008·61 cites·16 claims
- 0395US7442971B2Self-biasing transistor structure and an SRAM cell having less than six transistorsADVANCED MICRO DEVICES INC·Filed 2005·Granted Oct 28, 2008·133 cites·25 claims
- 0491US7329599B1Method for fabricating a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 12, 2008·20 cites·18 claims
- 0590US7494906B2Technique for transferring strain into a semiconductor regionADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 24, 2009·22 cites·35 claims
- 0688US7811876B2Reduction of memory instability by local adaptation of re-crystallization conditions in a cache area of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2008·Granted Oct 12, 2010·14 cites·19 claims
- 0786US8664056B2Transistor with embedded strain-inducing material formed in diamond-shaped cavities based on a pre-amorphizationWIRBELEIT FRANK·Filed 2011·Granted Mar 4, 2014·7 cites·19 claims
- 0884US8164145B2Three-dimensional transistor with double channel configurationWIRBELEIT FRANK·Filed 2009·Granted Apr 24, 2012·11 cites·23 claims
- 0984US7547610B2Method of making a semiconductor device comprising isolation trenches inducing different types of strainADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 16, 2009·11 cites·12 claims
- 1080US7880239B2Body controlled double channel transistor and circuits comprising the sameGLOBALFOUNDRIES INC·Filed 2008·Granted Feb 1, 2011·7 cites·16 claims
- 1180US7569437B2Formation of transistor having a strained channel region including a performance enhancing material composition utilizing a mask patternADVANCED MICRO DEVICES INC·Filed 2007·Granted Aug 4, 2009·6 cites·11 claims
- 1280US7326601B2Methods for fabrication of a stressed MOS deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 5, 2008·9 cites·17 claims
- 1368US9117929B2Method for forming a strained transistor by stress memorization based on a stressed implantation maskWIRBELEIT FRANK·Filed 2011·Granted Aug 25, 2015·2 cites·18 claims
- 1467US7329606B1Semiconductor device having nanowire contact structures and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 12, 2008·2 cites·14 claims
- 1566US8003460B2Method of forming a semiconductor structure comprising a formation of at least one sidewall spacer structureGLOBALFOUNDRIES INC·Filed 2008·Granted Aug 23, 2011·3 cites·13 claims
- 1666US7906385B2Method for selectively forming strain in a transistor by a stress memorization technique without adding additional lithography stepsGLOBALFOUNDRIES INC·Filed 2008·Granted Mar 15, 2011·3 cites·6 claims
- 1765US7696534B2Stressed MOS deviceADVANCED MICRO DEVICES INC·Filed 2008·Granted Apr 13, 2010·2 cites·14 claims
- 1864US7727827B2Method of forming a semiconductor structureGLOBALFOUNDRIES INC·Filed 2007·Granted Jun 1, 2010·2 cites·15 claims
- 1959US7964458B2Method for forming a strained transistor by stress memorization based on a stressed implantation maskGLOBALFOUNDRIES INC·Filed 2007·Granted Jun 21, 2011·1 cites·14 claims
- 2056US8138571B2Semiconductor device comprising isolation trenches inducing different types of strainSCHWAN CHRISTOPH·Filed 2009·Granted Mar 20, 2012·1 cites·14 claims
- 2152US7787108B2Inline stress evaluation in microstructure devicesGLOBALFOUNDRIES INC·Filed 2007·Granted Aug 31, 2010·0 cites·20 claims
- 2251US8264020B2Static RAM cell design and multi-contact regime for connecting double channel transistorsWIRBELEIT FRANK·Filed 2012·Granted Sep 11, 2012·0 cites·19 claims
- 2347US8507953B2Body controlled double channel transistor and circuits comprising the sameWIRBELEIT FRANK·Filed 2010·Granted Aug 13, 2013·0 cites·12 claims
- 2446US2009026521A1Self-biasing transistor structure and an sram cell having less than six transistorsWIRBELEIT FRANK·Filed 2008·Application pending·0 cites
- 2545US2008299733A1Method of forming a semiconductor structure comprising an implantation of ions in a material layer to be etchedPRESS PATRICK·Filed 2008·Application pending·0 cites
- 2643US2010203698A1Method of forming a semiconductor structureGLOBALFOUNDRIES INC·Filed 2010·Application pending·0 cites
- 2742US8298924B2Method for differential spacer removal by wet chemical etch process and device with differential spacer structureWIATR MACIEJ·Filed 2007·Granted Oct 30, 2012·0 cites·13 claims
- 2840US2007176246A1SRAM cells including self-stabilizing transistor structuresADVANCED MICRO DEVICES INC·Filed 2006·Application pending·0 cites
- 2940US2006022197A1Technique for evaluating local electrical characteristics in semiconductor devicesWIRBELEIT FRANK·Filed 2005·Application pending·0 cites
- 3040US2013175610A1Transistor with stress enhanced channel and methods for fabricationFLACHOWSKY STEFAN·Filed 2012·Application pending·0 cites
- 3138US8642420B2Fabrication of a semiconductor device with extended epitaxial semiconductor regionsFLACHOWSKY STEFAN·Filed 2011·Granted Feb 4, 2014·0 cites·19 claims
- 3238US2006270202A1Technique for reducing silicide non-uniformities by adapting a vertical dopant profileWIRBELEIT FRANK·Filed 2006·Application pending·0 cites
- 3336US8536019B2Semiconductor devices having encapsulated isolation regions and related fabrication methodsMIKALO RICARDO P·Filed 2011·Granted Sep 17, 2013·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →