Inventor · disambiguated record
Paul Chang
Also filed as: CHANG PAUL · CHANG PAUL C · CHANG PAUL C T · CHANG PAUL CHUNG-CHEN
75 granted patents·9 pending applications·2,069 citations·filing 1984–2020
99Inventor score
Top patents by PatentIndex Score
84 records- 0199US7892945B2Nanowire mesh device and method of fabricating sameIBM·Filed 2010·Granted Feb 22, 2011·97 cites·13 claims
- 0298US8785981B1Non-replacement gate nanomesh field effect transistor with pad regionsIBM·Filed 2013·Granted Jul 22, 2014·49 cites·10 claims
- 0397US8395220B2Nanomesh SRAM cellCHANG JOSEPHINE·Filed 2012·Granted Mar 12, 2013·33 cites·19 claims
- 0497US8084308B2Single gate inverter nanowire meshCHANG JOSEPHINE·Filed 2009·Granted Dec 27, 2011·83 cites·9 claims
- 0597US7893492B2Nanowire mesh device and method of fabricating sameIBM·Filed 2009·Granted Feb 22, 2011·76 cites·10 claims
- 0697US7508868B2Systems and methods for testing the performance of and simulating a wireless communication deviceKYOCERA WIRELESS CORP·Filed 2005·Granted Mar 24, 2009·65 cites·75 claims
- 0796US8778768B1Non-replacement gate nanomesh field effect transistor with epitixially grown source and drainIBM·Filed 2013·Granted Jul 15, 2014·89 cites·14 claims
- 0896US8216902B2Nanomesh SRAM cellCHANG JOSEPHINE·Filed 2009·Granted Jul 10, 2012·50 cites·5 claims
- 0995US8900959B2Non-replacement gate nanomesh field effect transistor with pad regionsIBM·Filed 2013·Granted Dec 2, 2014·18 cites·15 claims
- 1095US8586449B1Raised isolation structure self-aligned to fin structuresCHANG JOSEPHINE B·Filed 2012·Granted Nov 19, 2013·23 cites·22 claims
- 1195US8422273B2Nanowire mesh FET with multiple threshold voltagesCHANG JOSEPHINE·Filed 2009·Granted Apr 16, 2013·39 cites·9 claims
- 1295US6448160B1Method of fabricating power rectifier device to vary operating parameters and resulting deviceAPD SEMICONDUCTOR INC·Filed 2000·Granted Sep 10, 2002·99 cites·17 claims
- 1395US4577391AMethod of manufacturing CMOS devicesMONOLITHIC MEMORIES INC·Filed 1984·Granted Mar 25, 1986·100 cites·10 claims
- 1494US9559284B2Silicided nanowires for nanobridge weak linksGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 31, 2017·8 cites·12 claims
- 1594US6399996B1Schottky diode having increased active surface area and method of fabricationAPD SEMICONDUCTOR INC·Filed 2000·Granted Jun 4, 2002·99 cites·19 claims
- 1693US10867106B1Routing for length-matched nets in interposer designsSYNOPSYS INC·Filed 2020·Granted Dec 15, 2020·5 cites·20 claims
- 1793US8466451B2Single gate inverter nanowire meshCHANG JOSEPHINE·Filed 2011·Granted Jun 18, 2013·17 cites·15 claims
- 1893US6498367B1Discrete integrated circuit rectifier deviceAPD SEMICONDUCTOR INC·Filed 2000·Granted Dec 24, 2002·88 cites·7 claims
- 1992US8513099B2Epitaxial source/drain contacts self-aligned to gates for deposited FET channelsCHANG JOSEPHINE B·Filed 2010·Granted Aug 20, 2013·10 cites·11 claims
- 2092US8472239B2Nanowire mesh FET with multiple threshold voltagesCHANG JOSEPHINE·Filed 2012·Granted Jun 25, 2013·14 cites·15 claims
- 2192US6420225B1Method of fabricating power rectifier deviceAPD SEMICONDUCTOR INC·Filed 2001·Granted Jul 16, 2002·86 cites·20 claims
- 2292US5367643AGeneric high bandwidth adapter having data packet memory configured in three level hierarchy for temporary storage of variable length data packetsIBM·Filed 1991·Granted Nov 22, 1994·202 cites·24 claims
- 2391US9000530B26T SRAM architecture for gate-all-around nanowire devicesIBM·Filed 2013·Granted Apr 7, 2015·11 cites·14 claims
- 2491US8741722B2Formation of dividers between gate ends of field effect transistor devicesCHANG JOSEPHINE B·Filed 2012·Granted Jun 3, 2014·11 cites·14 claims
- 2591US6743703B2Power diode having improved on resistance and breakdown voltageAPD SEMICONDUCTOR INC·Filed 2002·Granted Jun 1, 2004·74 cites·7 claims
- 2691US6404033B1Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabricationAPD SEMICONDUCTOR INC·Filed 2000·Granted Jun 11, 2002·68 cites·18 claims
- 2790US8779414B2Collapsable gate for deposited nanostructuresIBM·Filed 2013·Granted Jul 15, 2014·10 cites·20 claims
- 2889US8796742B1Non-replacement gate nanomesh field effect transistor with epitixially grown source and drainIBM·Filed 2013·Granted Aug 5, 2014·9 cites·20 claims
- 2989US8637371B2Non-planar MOSFET structures with asymmetric recessed source drains and methods for making the sameCHANG JOSEPHINE B·Filed 2012·Granted Jan 28, 2014·11 cites·10 claims
- 3089US8492748B2Collapsable gate for deposited nanostructuresCHANG JOSEPHINE B·Filed 2011·Granted Jul 23, 2013·10 cites·11 claims
- 3189US6426541B2Schottky diode having increased forward current with improved reverse bias characteristics and method of fabricationAPD SEMICONDUCTOR INC·Filed 2000·Granted Jul 30, 2002·55 cites·13 claims
- 3288US6624030B2Method of fabricating power rectifier device having a laterally graded P-N junction for a channel regionADVANCED POWER DEVICES INC·Filed 2000·Granted Sep 23, 2003·45 cites·18 claims
- 3387US11361140B1Routing for length-matched nets in interposer designsSYNOPSYS INC·Filed 2020·Granted Jun 14, 2022·2 cites·9 claims
- 3487US8940595B2Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levelsIBM·Filed 2013·Granted Jan 27, 2015·8 cites·20 claims
- 3587US8626480B2Compact model for device/circuit/chip leakage current (IDDQ) calculation including process induced uplift factorsCHANG PAUL·Filed 2009·Granted Jan 7, 2014·20 cites·23 claims
- 3687US7250668B2Integrated circuit including power diodeDIODES INC·Filed 2005·Granted Jul 31, 2007·14 cites·17 claims
- 3786US7554523B2Peripheral device for image display apparatusINVENTEC CORP·Filed 2005·Granted Jun 30, 2009·17 cites·9 claims
- 3885US6515330B1Power device having vertical current path with enhanced pinch-off for current limitingAPD SEMICONDUCTOR INC·Filed 2002·Granted Feb 4, 2003·40 cites·17 claims
- 3984US9034704B26T SRAM architecture for gate-all-around nanowire devicesIBM·Filed 2013·Granted May 19, 2015·6 cites·14 claims
- 4083US9287399B2Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levelsIBM·Filed 2014·Granted Mar 15, 2016·5 cites·16 claims
- 4183US8554282B2Methods, devices and computer program products for presenting screen contentCHANG PAUL·Filed 2010·Granted Oct 8, 2013·8 cites·17 claims
- 4282US9443951B2Embedded planar source/drain stressors for a finFET including a plurality of finsGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 13, 2016·5 cites·14 claims
- 4382US6765264B1Method of fabricating power rectifier device to vary operating parameters and resulting deviceADVANCED POWER DEVICES·Filed 2003·Granted Jul 20, 2004·32 cites·4 claims
- 4481US9024355B2Embedded planar source/drain stressors for a finFET including a plurality of finsCHANG JOSEPHINE B·Filed 2012·Granted May 5, 2015·5 cites·20 claims
- 4580US9761679B2Performance optimized gate structures having memory device and logic device, the memory device with silicided source/drain regions that are raised with respect to silicided source/drain regions of the logic deviceIBM·Filed 2016·Granted Sep 12, 2017·2 cites·13 claims
- 4680US7709910B2Semiconductor structure for low parasitic gate capacitanceIBM·Filed 2007·Granted May 4, 2010·8 cites·4 claims
- 4778US7434285B1Adjustable flow pulsating pool sweepCHANG PAUL C·Filed 2008·Granted Oct 14, 2008·11 cites·19 claims
- 4877US6186408B1High cell density power rectifierADVANCED POWER DEVICES INC·Filed 1999·Granted Feb 13, 2001·43 cites·18 claims
- 4976US6979861B2Power device having reduced reverse bias leakage currentAPD SEMICONDUCTOR INC·Filed 2002·Granted Dec 27, 2005·25 cites·14 claims
- 5072US6331455B1Power rectifier device and method of fabricating power rectifier devicesADVANCED POWER DEVICES INC·Filed 1999·Granted Dec 18, 2001·29 cites·24 claims
Showing the top 50 of 84 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →