Inventor · disambiguated record
Peijun Ding
Also filed as: DING PEIJUN
103 granted patents·28 pending applications·3,566 citations·filing 1994–2023
99Inventor score
Files withAPPLIED MATERIALS INC90BEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD10UNIV NEW YORK STATE RES FOUND4YE MENGQI4DING PEIJUN3
Top patents by PatentIndex Score
131 records- 0198US6350353B2Alternate steps of IMP and sputtering process to improve sidewall coverageAPPLIED MATERIALS INC·Filed 1999·Granted Feb 26, 2002·175 cites·21 claims
- 0297US7253109B2Method of depositing a tantalum nitride/tantalum diffusion barrier layer systemAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·44 cites·67 claims
- 0397US6919275B2Method of preventing diffusion of copper through a tantalum-comprising barrier layerAPPLIED MATERIALS INC·Filed 2004·Granted Jul 19, 2005·87 cites·4 claims
- 0497US5879523ACeramic coated metallic insulator particularly useful in a plasma sputter reactorAPPLIED MATERIALS INC·Filed 1997·Granted Mar 9, 1999·160 cites·18 claims
- 0596US6436267B1Method for achieving copper fill of high aspect ratio interconnect featuresAPPLIED MATERIALS INC·Filed 2000·Granted Aug 20, 2002·105 cites·35 claims
- 0696US6413383B1Method for igniting a plasma in a sputter reactorAPPLIED MATERIALS INC·Filed 2000·Granted Jul 2, 2002·92 cites·15 claims
- 0796US6328871B1Barrier layer for electroplating processesAPPLIED MATERIALS INC·Filed 1999·Granted Dec 11, 2001·161 cites·12 claims
- 0896US6066892ACopper alloy seed layer for copper metallization in an integrated circuitAPPLIED MATERIALS INC·Filed 1998·Granted May 23, 2000·185 cites·20 claims
- 0995US6582569B1Process for sputtering copper in a self ionized plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jun 24, 2003·75 cites·21 claims
- 1094US6758947B2Damage-free sculptured coating depositionAPPLIED MATERIALS INC·Filed 2001·Granted Jul 6, 2004·47 cites·29 claims
- 1194US6398929B1Plasma reactor and shields generating self-ionized plasma for sputteringAPPLIED MATERIALS INC·Filed 1999·Granted Jun 4, 2002·128 cites·22 claims
- 1294US6160315ACopper alloy via structureAPPLIED MATERIALS INC·Filed 2000·Granted Dec 12, 2000·73 cites·24 claims
- 1393US6627050B2Method and apparatus for depositing a tantalum-containing layer on a substrateAPPLIED MATERIALS INC·Filed 2001·Granted Sep 30, 2003·67 cites·54 claims
- 1493US6037257ASputter deposition and annealing of copper alloy metallizationAPPLIED MATERIALS INC·Filed 1997·Granted Mar 14, 2000·117 cites·15 claims
- 1593US5736021AElectrically floating shield in a plasma reactorAPPLIED MATERIALS INC·Filed 1996·Granted Apr 7, 1998·91 cites·20 claims
- 1692US8668816B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2007·Granted Mar 11, 2014·19 cites·16 claims
- 1792US7381639B2Method of depositing a metal seed layer on semiconductor substratesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 3, 2008·10 cites·13 claims
- 1892US6893541B2Multi-step process for depositing copper seed layer in a viaAPPLIED MATERIALS INC·Filed 2002·Granted May 17, 2005·51 cites·9 claims
- 1992US6841050B2Small planetary magnetronAPPLIED MATERIALS INC·Filed 2002·Granted Jan 11, 2005·36 cites·25 claims
- 2091US9390970B2Method for depositing a diffusion barrier layer and a metal conductive layerCHIANG TONY·Filed 2007·Granted Jul 12, 2016·10 cites·69 claims
- 2191US7569125B2Shields usable with an inductively coupled plasma reactorAPPLIED MATERIALS INC·Filed 2005·Granted Aug 4, 2009·16 cites·17 claims
- 2291US6911124B2Method of depositing a TaN seed layerAPPLIED MATERIALS INC·Filed 2002·Granted Jun 28, 2005·52 cites·26 claims
- 2391US6852202B2Small epicyclic magnetron with controlled radial sputtering profileAPPLIED MATERIALS INC·Filed 2003·Granted Feb 8, 2005·48 cites·36 claims
- 2491US6692617B1Sustained self-sputtering reactor having an increased density plasmaAPPLIED MATERIALS INC·Filed 1997·Granted Feb 17, 2004·79 cites·25 claims
- 2590US7074714B2Method of depositing a metal seed layer on semiconductor substratesAPPLIED MATERIALS INC·Filed 2004·Granted Jul 11, 2006·26 cites·3 claims
- 2690US6610184B2Magnet array in conjunction with rotating magnetron for plasma sputteringAPPLIED MATERIALS INC·Filed 2001·Granted Aug 26, 2003·44 cites·15 claims
- 2789US6790776B2Barrier layer for electroplating processesAPPLIED MATERIALS INC·Filed 2001·Granted Sep 14, 2004·34 cites·19 claims
- 2889US6566259B1Integrated deposition process for copper metallizationAPPLIED MATERIALS INC·Filed 2000·Granted May 20, 2003·41 cites·27 claims
- 2989US6458255B2Ultra-low resistivity tantalum films and methods for their depositionAPPLIED MATERIALS INC·Filed 2001·Granted Oct 1, 2002·32 cites·4 claims
- 3089US6139699ASputtering methods for depositing stress tunable tantalum and tantalum nitride filmsAPPLIED MATERIALS INC·Filed 1997·Granted Oct 31, 2000·72 cites·14 claims
- 3187US7041201B2Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewithAPPLIED MATERIALS INC·Filed 2003·Granted May 9, 2006·31 cites·18 claims
- 3287US6207558B1Barrier applications for aluminum planarizationAPPLIED MATERIALS INC·Filed 1999·Granted Mar 27, 2001·77 cites·34 claims
- 3386US11699541B2Magnetic thin film laminated structure deposition methodBEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD·Filed 2019·Granted Jul 11, 2023·2 cites·15 claims
- 3486US10047430B2Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2014·Granted Aug 14, 2018·5 cites·22 claims
- 3586US6368880B2Barrier applications for aluminum planarizationAPPLIED MATERIALS INC·Filed 2001·Granted Apr 9, 2002·33 cites·16 claims
- 3686US6235163B1Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performanceAPPLIED MATERIALS INC·Filed 1999·Granted May 22, 2001·54 cites·14 claims
- 3785US6605197B1Method of sputtering copper to fill trenches and viasAPPLIED MATERIALS INC·Filed 1997·Granted Aug 12, 2003·57 cites·14 claims
- 3885US6399479B1Processes to improve electroplating fillAPPLIED MATERIALS INC·Filed 1999·Granted Jun 4, 2002·74 cites·20 claims
- 3984US8500963B2Sputtering of thermally resistive materials including metal chalcogenidesYE MENGQI·Filed 2007·Granted Aug 6, 2013·7 cites·17 claims
- 4084US7294574B2Sputter deposition and etching of metallization seed layer for overhang and sidewall improvementAPPLIED MATERIALS INC·Filed 2004·Granted Nov 13, 2007·36 cites·40 claims
- 4184US6875321B2Auxiliary magnet array in conjunction with magnetron sputteringAPPLIED MATERIALS INC·Filed 2003·Granted Apr 5, 2005·26 cites·20 claims
- 4283US7884032B2Thin film depositionAPPLIED MATERIALS INC·Filed 2005·Granted Feb 8, 2011·10 cites·27 claims
- 4383US7807030B2Small scanned magentronAPPLIED MATERIALS INC·Filed 2006·Granted Oct 5, 2010·4 cites·9 claims
- 4483US7687909B2Metal / metal nitride barrier layer for semiconductor device applicationsAPPLIED MATERIALS INC·Filed 2007·Granted Mar 30, 2010·7 cites·13 claims
- 4583US6387805B2Copper alloy seed layer for copper metallizationAPPLIED MATERIALS INC·Filed 1997·Granted May 14, 2002·58 cites·38 claims
- 4683US5911113ASilicon-doped titanium wetting layer for aluminum plugAPPLIED MATERIALS INC·Filed 1997·Granted Jun 8, 1999·65 cites·13 claims
- 4781US12424363B2Magnetic thin film laminated structure and micro-inductive device thereofBEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 4881US10622224B2Precleaning chamber and plasma processing apparatusBEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD·Filed 2015·Granted Apr 14, 2020·4 cites·18 claims
- 4981US6579730B2Monitoring process for oxide removalAPPLIED MATERIALS INC·Filed 2001·Granted Jun 17, 2003·27 cites·31 claims
- 5081US6174811B1Integrated deposition process for copper metallizationAPPLIED MATERIALS INC·Filed 1998·Granted Jan 16, 2001·48 cites·7 claims
Showing the top 50 of 131 patent records by PatentIndex Score.
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