Inventor · disambiguated record
Yoshiyuki Ishigaki
Also filed as: ISHIGAKI YOSHIYUKI
38 granted patents·7 pending applications·669 citations·filing 1991–2017
98Inventor score
Files withMITSUBISHI ELECTRIC CORP24RENESAS TECH CORP14RENESAS ELECTRONICS CORP3TOMITA HIDEMOTO2IMAI YUTAKA1
Top patents by PatentIndex Score
45 records- 0197US8422274B2Semiconductor storage device and method of fabricating the sameTOMITA HIDEMOTO·Filed 2011·Granted Apr 16, 2013·108 cites·9 claims
- 0297US6812574B2Semiconductor storage device and method of fabricating the sameRENESAS TECH CORP·Filed 2002·Granted Nov 2, 2004·150 cites·11 claims
- 0385US6774441B2Semiconductor device having an MIS transistorRENESAS TECH CORP·Filed 2003·Granted Aug 10, 2004·39 cites·7 claims
- 0471US5973548AInternal supply voltage generating circuit for generating internal supply voltage less susceptible to variation of external supply voltageMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 26, 1999·25 cites·5 claims
- 0571US5777920ASemiconductor memory device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 7, 1998·32 cites·22 claims
- 0668US8395932B2Semiconductor storage device and method of fabricating the sameTOMITA HIDEMOTO·Filed 2010·Granted Mar 12, 2013·3 cites·14 claims
- 0768US6853022B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2003·Granted Feb 8, 2005·17 cites·11 claims
- 0867US6097103ASemiconductor device having an improved interconnection and method for fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Aug 1, 2000·20 cites·18 claims
- 0966US6236117B1Semiconductor memory device including shunt interconnectionMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 22, 2001·22 cites·9 claims
- 1063US5471085ASemiconductor device with polycrystalline silicon emitter conductive layerMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 28, 1995·22 cites·5 claims
- 1160US6831852B2Semiconductor memory device having a latch circuit and storage capacitorRENESAS TECH CORP·Filed 2003·Granted Dec 14, 2004·11 cites·17 claims
- 1260US6812534B2Static semiconductor memory deviceRENESAS TECH CORP·Filed 2003·Granted Nov 2, 2004·16 cites·9 claims
- 1360US6242297B1Semiconductor device having an improved interconnection and method for fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 5, 2001·6 cites·2 claims
- 1459US7321152B2Thin-film transistor and method of fabricating the sameRENESAS TECH CORP·Filed 2006·Granted Jan 22, 2008·1 cites·4 claims
- 1558US6781869B2Semiconductor memoryRENESAS TECH CORP·Filed 2002·Granted Aug 24, 2004·10 cites·10 claims
- 1657US5659193ASemiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 19, 1997·17 cites·8 claims
- 1757US5480816AMethod of fabricating a bipolar transistor having a link baseMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 2, 1996·18 cites·13 claims
- 1855US6891743B2Semiconductor memory device having a capacitive plate to reduce soft errorsRENESAS TECH CORP·Filed 2002·Granted May 10, 2005·6 cites·12 claims
- 1954US8908419B2Semiconductor storage device and method of fabricating the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Dec 9, 2014·0 cites·3 claims
- 2053US5619056ASRAM semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 8, 1997·13 cites·11 claims
- 2153US5319234AC-BiCMOS semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 7, 1994·16 cites·57 claims
- 2252US6936878B2Semiconductor memory device with reduced memory cell areaRENESAS TECH CORP·Filed 2003·Granted Aug 30, 2005·6 cites·10 claims
- 2352US6271569B1Semiconductor device having memory cells and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Aug 7, 2001·12 cites·16 claims
- 2451US5841153ASRAM semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 24, 1998·12 cites·3 claims
- 2550US6268627B1Semiconductor device having impurity regions with varying impurity concentrationsMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 31, 2001·16 cites·8 claims
- 2650US5350939ASemiconductor device and method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Sep 27, 1994·14 cites·9 claims
- 2749US5600589AStatic random access memoryMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 4, 1997·12 cites·10 claims
- 2848US7187040B2Thin-film transistor and method of fabricating the sameRENESAS TECH CORP·Filed 2005·Granted Mar 6, 2007·0 cites·2 claims
- 2947US6404024B1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 11, 2002·7 cites·12 claims
- 3044US6198149B1Semiconductor device having novel insulating film structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 6, 2001·10 cites·5 claims
- 3144US5245209ASemiconductor device including complementary insulating gate field effect transistors and bipolar transistors in semiconductor substrateMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Sep 14, 1993·13 cites·12 claims
- 3244US2009034317A1Semiconductor storage device and method of fabricating the sameRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 3343US2010044773A1Semiconductor memory deviceRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 3442US2006125024A1Semiconductor device and a method of manufacturing the sameISHIGAKI YOSHIYUKI·Filed 2005·Application pending·0 cites
- 3539US6632716B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 14, 2003·0 cites·5 claims
- 3639US5994719ASRAM semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 30, 1999·5 cites·3 claims
- 3739US2007177416A1Semiconductor storage device and method of fabricating the sameRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 3839US2006194390A1Semiconductor device and method of manufacturing the sameIMAI YUTAKA·Filed 2006·Application pending·0 cites
- 3938US9312267B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Apr 12, 2016·0 cites·10 claims
- 4038US2018040365A1Semiconductor device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 4135US5731618ASemiconductor device and method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 24, 1998·4 cites·15 claims
- 4234US7112854B1Thin-film transistor and method of fabricating the sameRENESAS TECH CORP·Filed 1997·Granted Sep 26, 2006·2 cites·8 claims
- 4334US5355009ASemiconductor device and method of fabricating sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Oct 11, 1994·4 cites·6 claims
- 4434US2005083756A1Semiconductor storage device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 2004·Application pending·0 cites
- 4530US6147387AStatic random access memoryMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 14, 2000·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →