Inventor · disambiguated record
Tze Ho Simon Chan
Also filed as: CHAN TZE H · CHAN TZE HO · CHAN TZE HO SEMON · CHAN TZE HO SIMON
22 granted patents·2 pending applications·329 citations·filing 1999–2022
95Inventor score
Top patents by PatentIndex Score
24 records- 0197US7902548B2Planar voltage contrast test structureCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Mar 8, 2011·84 cites·10 claims
- 0296US9583167B2Low power memory cell with high sensing marginGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Feb 28, 2017·54 cites·20 claims
- 0394US9589616B2Energy efficient three-terminal voltage controlled memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Mar 7, 2017·23 cites·18 claims
- 0490US7081378B2Horizontal TRAM and method for the fabrication thereofCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Jul 25, 2006·45 cites·15 claims
- 0589US9349772B2Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAMGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted May 24, 2016·8 cites·17 claims
- 0689US9165610B1Non-volatile memory cell arrays and methods of fabricating semiconductor devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Oct 20, 2015·8 cites·20 claims
- 0788US9076962B2Nonvolative memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jul 7, 2015·12 cites·20 claims
- 0883US9082964B2Nonvolative memory with filamentGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Jul 14, 2015·5 cites·19 claims
- 0983US6703659B2Low voltage programmable and erasable flash EEPROMCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Mar 9, 2004·21 cites·6 claims
- 1080US6518122B1Low voltage programmable and erasable flash EEPROMCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Feb 11, 2003·43 cites·24 claims
- 1176US7183590B2Horizontal tramCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Feb 27, 2007·5 cites·10 claims
- 1266US6828194B2Low voltage programmable and erasable flash EEPROMCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Dec 7, 2004·7 cites·4 claims
- 1365US11942415B2Thin film based passive devices and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Mar 26, 2024·0 cites·19 claims
- 1459US9218875B2Resistive non-volatile memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Dec 22, 2015·2 cites·22 claims
- 1555US6760258B2Means to erase a low voltage programmable and erasable flash EEPROMCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Jul 6, 2004·3 cites·7 claims
- 1655US2021098363A1Thin film based passive devices and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Application pending·0 cites
- 1751US11119917B2Neuromorphic memories with split gate flash multi-level cell and method of making the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Sep 14, 2021·0 cites·18 claims
- 1851US7160741B2Planar voltage contrast test structure and methodCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Jan 9, 2007·4 cites·10 claims
- 1951US7101746B2Method to lower work function of gate electrode through Ge implantationCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Sep 5, 2006·3 cites·18 claims
- 2044US6872608B1Method to selectively form poly SiGe P type electrode and polysilicon N type electrode through planarizationCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Mar 29, 2005·2 cites·15 claims
- 2137US9196356B2Stackable non-volatile memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Nov 24, 2015·0 cites·23 claims
- 2237US2006205138A1Method to selectively form SiGe P type electrode and polysilicon N type electrode through planarizationCHARTERED SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 2331US8236646B2Non-volatile memory manufacturing method using STI trench implantationCHAN TZE HO SIMON·Filed 2003·Granted Aug 7, 2012·0 cites·10 claims
- 2430US10236057B2Memory cells and methods for writing data to memory cellsGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Mar 19, 2019·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →