Thin film based passive devices and methods of forming the same

Abstract

A device may include a substrate, and an interlevel dielectric arranged over the substrate. The interlevel dielectric may include a first interlevel dielectric layer in an interconnect level i, the first interlevel dielectric layer having a first interconnect and a second interconnect therein. A nitride block insulator may be arranged over the first interlevel dielectric layer and over the first interconnect and the second interconnect. An opening may be arranged in the nitride block insulator, the opening extending through the nitride block insulator to expose a surface of the first interconnect in the first interlevel dielectric layer. A contact plug may be arranged in the opening of the nitride block insulator. The contact plug at least lines the opening and prevents out-diffusion of conductive material from the first interconnect. A thin film of a passive component may be arranged over the nitride block insulator and over the contact plug.

1 . A device comprising:
 a substrate;   an interlevel dielectric arranged over the substrate, the interlevel dielectric comprising:
 a first interlevel dielectric layer in an interconnect level i, the first interlevel dielectric layer having a first interconnect and a second interconnect therein; 
 a nitride block insulator arranged over the first interlevel dielectric layer and over the first interconnect and the second interconnect; 
 an opening arranged in the nitride block insulator, the opening extending through the nitride block insulator to expose a surface of the first interconnect in the first interlevel dielectric layer; 
 a contact plug arranged in the opening of the nitride block insulator, 
 wherein the contact plug at least lines the opening and prevents out-diffusion of conductive material from the first interconnect; and 
 a thin film of a passive component arranged over the nitride block insulator and over the contact plug. 
   
     
     
         2 . The device of  claim 1 , wherein the contact plug and the nitride block insulator have a substantially planar top surface. 
     
     
         3 . The device of  claim 1 , wherein the thin film conforms to a topography of the nitride block insulator and the contact plug. 
     
     
         4 . The device of  claim 1 , further comprising:
 a second opening arranged in the nitride block insulator, the second opening extending through the nitride block insulator to expose a surface of the second interconnect in the first interlevel dielectric layer;   a second contact plug arranged in the second opening of the nitride block insulator, wherein the second contact plug at least lines the second opening and prevents out-diffusion of conductive material from the second interconnect; and   wherein the thin film further covers the second contact plug and serves as a thin film resistor, the thin film resistor electrically connects the first interconnect and the second interconnect.   
     
     
         5 . The device of  claim 1 , wherein the thin film, nitride block insulator, and the first interconnect and the second interconnect form a metal-insulating-metal (MIM) capacitor. 
     
     
         6 . The device of  claim 5 , further comprising:
 a second opening arranged in the nitride block insulator, the second opening extending through the nitride block insulator to expose a surface of the second interconnect in the first interlevel dielectric layer;   a second contact plug arranged in the second opening of the nitride block insulator, wherein the second contact plug at least lines the second opening and prevents out-diffusion of conductive material from the second interconnect;   a second thin film of the passive component arranged over the nitride block insulator and over the second contact plug; and   wherein the thin film comprises a plurality of interconnected first film fingers coupled to the first interconnect, and the second thin film comprises a plurality of interconnected second film fingers coupled to the second interconnect, wherein each first film finger is arranged alternately with a second film finger for forming an alternating polarity MIM capacitor.   
     
     
         7 . The device of  claim 1 , further comprising a second thin film of the passive component arranged over the first interlevel dielectric layer and beneath the nitride block insulator, wherein the second thin film covers a surface of the second interconnect. 
     
     
         8 . The device of  claim 1 , wherein a material of the contact plug comprises tungsten, tantalum, titanium, tantalum nitride, titanium nitride, or combinations thereof. 
     
     
         9 . The device of  claim 8 , wherein the first interconnect and the second interconnect each comprises a copper metal line. 
     
     
         10 . The device of  claim 1 , wherein the nitride block insulator comprises one or more layers of silicon nitride, silicon oxynitride, or combinations thereof. 
     
     
         11 . A method of forming a device, comprising:
 providing a substrate;   arranging an interlevel dielectric over the substrate, wherein arranging the interlevel dielectric comprises:
 forming a nitride block insulator over a first interlevel dielectric layer in an interconnect level i of the interlevel dielectric, wherein the first interlevel dielectric layer comprises a first interconnect and a second interconnect therein; 
 forming an opening in the nitride block insulator, the opening extending through the nitride block insulator to expose a surface of the first interconnect in the first interlevel dielectric layer; 
 forming a contact plug in the opening of the nitride block insulator, wherein the contact plug at least lines the opening and prevents out-diffusion of conductive material from the first interconnect; and 
 forming a thin film of a passive component over the nitride block insulator and over the contact plug. 
   
     
     
         12 . The method of  claim 11 , wherein forming the contact plug comprises:
 depositing contact plug material over the nitride block insulator to fill the opening in the nitride block insulator, and   performing planarization to provide a substantially planar top surface between the contact plug and the nitride block insulator.   
     
     
         13 . The method of  claim 11 , wherein forming the contact plug comprises depositing contact plug material to at least line the opening in the nitride block insulator, and wherein the thin film is conformal to a topography of the nitride block insulator and the contact plug. 
     
     
         14 . The method of  claim 11 , further comprising:
 forming a second opening in the nitride block insulator, the second opening extending through the nitride block insulator to expose a surface of the second interconnect in the first interlevel dielectric layer;   forming a second contact plug in the second opening of the nitride block insulator, wherein the second contact plug at least lines the second opening and prevents out-diffusion of conductive material from the second interconnect; and   wherein the thin film further covers the second contact plug and serves as a thin film resistor, the thin film resistor electrically connects the first interconnect and the second interconnect.   
     
     
         15 . The method of  claim 11 , wherein the thin film, nitride block insulator, and the first interconnect and the second interconnect form a metal-insulating-metal (MIM) capacitor. 
     
     
         16 . The method of  claim 15 , further comprising:
 forming a second opening in the nitride block insulator, the second opening extending through the nitride block insulator to expose a surface of the second interconnect in the first interlevel dielectric layer;   forming a second contact plug in the second opening of the nitride block insulator, wherein the second contact plug at least lines the second opening and prevents out-diffusion of conductive material from the second interconnect;   forming a second thin film of the passive component arranged over the nitride block insulator and over the second contact plug; and   wherein the thin film further comprises a plurality of interconnected first film fingers coupled to the first interconnect, and the second thin film comprises a plurality of interconnected second film fingers coupled to the second interconnect, wherein each first film finger is arranged alternately with a second film finger for forming an alternating polarity MIM capacitor.   
     
     
         17 . The method of  claim 11 , further comprising forming a second thin film of the passive component over the first interlevel dielectric layer and beneath the nitride block insulator, wherein the second thin film covers a surface of the second interconnect. 
     
     
         18 . The method of  claim 11 , wherein a material of the contact plug is comprises tungsten, tantalum, titanium, tantalum nitride, titanium nitride, or combinations thereof. 
     
     
         19 . The method of  claim 18 , wherein the first interconnect and the second interconnect each comprises a copper metal line. 
     
     
         20 . The method of  claim 11 , wherein the nitride block insulator comprises one or more layers of silicon nitride, silicon oxynitride, or combinations thereof.