Inventor · disambiguated record
Johannes Groschopf
Also filed as: GROSCHOPF JOHANNES · GROSCHOPF JOHANNES F · GROSCHOPF JOHANNES FRIEDRICH
16 granted patents·7 pending applications·150 citations·filing 2000–2012
92Inventor score
Files withADVANCED MICRO DEVICES INC7GLOBALFOUNDRIES INC2ADVANCED MICRO DEVICES INC AMD1AMD INC1BAARS PETER1
Top patents by PatentIndex Score
23 records- 0191US8021942B2Method of forming CMOS device having gate insulation layers of different type and thicknessGLOBALFOUNDRIES INC·Filed 2008·Granted Sep 20, 2011·23 cites·22 claims
- 0290US8247281B2Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayersHEMPEL KLAUS·Filed 2010·Granted Aug 21, 2012·13 cites·18 claims
- 0388US6720264B2Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting propertiesADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 13, 2004·45 cites·15 claims
- 0482US8679924B2Self-aligned multiple gate transistor formed on a bulk substrateWEI ANDY·Filed 2011·Granted Mar 25, 2014·7 cites·14 claims
- 0576US8748302B2Replacement gate approach for high-k metal gate stacks by using a multi-layer contact levelPRINDLE CHRISTOPHER M·Filed 2012·Granted Jun 10, 2014·6 cites·9 claims
- 0672US7091106B2Method of reducing STI divot formation during semiconductor device fabricationADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 15, 2006·18 cites·7 claims
- 0770US8506770B2Electrochemical planarization system comprising enhanced electrolyte flowKIESEL AXEL·Filed 2009·Granted Aug 13, 2013·3 cites·17 claims
- 0869US6720242B2Method of forming a substrate contact in a field effect transistor formed over a buried insulator layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 13, 2004·18 cites·15 claims
- 0963US8338306B2Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistorsHEINRICH JENS·Filed 2010·Granted Dec 25, 2012·2 cites·16 claims
- 1057US7387970B2Method of using an aqueous solution and composition thereofFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jun 17, 2008·6 cites·6 claims
- 1157US7223698B1Method of forming a semiconductor arrangement with reduced field-to active step heightADVANCED MICRO DEVICES INC·Filed 2005·Granted May 29, 2007·2 cites·16 claims
- 1254US8585465B2Planarization of a material system in a semiconductor device by using a non-selective in situ prepared slurryGROSCHOPF JOHANNES·Filed 2010·Granted Nov 19, 2013·2 cites·13 claims
- 1353US7528059B2Method for reducing polish-induced damage in a contact structure by forming a capping layerADVANCED MICRO DEVICES INC·Filed 2006·Granted May 5, 2009·1 cites·17 claims
- 1451US7456105B1CMP metal polishing slurry and process with reduced solids concentrationAMD INC·Filed 2002·Granted Nov 25, 2008·4 cites·12 claims
- 1549US8357575B2Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayersGLOBALFOUNDRIES INC·Filed 2012·Granted Jan 22, 2013·0 cites·12 claims
- 1643US7767508B2Method for forming offset spacers for semiconductor device arrangementsADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 3, 2010·0 cites·13 claims
- 1739US2007049184A1Retaining ring structure for enhanced removal rate during fixed abrasive chemical mechanical polishingADVANCED MICRO DEVICES INC AMD·Filed 2005·Application pending·0 cites
- 1838US2006223320A1Polishing technique to minimize abrasive removal of material and composition thereforCOOPER KEVIN E·Filed 2005·Application pending·0 cites
- 1937US2004000234A1System and method for reducing the chemical reactivity of water and other chemicals used in the fabrication of integrated circuitsFiled 2002·Application pending·0 cites
- 2037US2013049123A1Semiconductor Device with DRAM Word Lines and Gate Electrodes in Non-Memory Regions of the Device Comprised of a Metal, and Methods of Making SameBAARS PETER·Filed 2011·Application pending·0 cites
- 2137US2004009670A1Apparatus and method for reducing oxidation of polished metal surfaces in a chemical mechanical polishing processFiled 2003·Application pending·0 cites
- 2236US2008070356A1Trench replacement gate process for transistors having elevated source and drain regionsADVANCED MICRO DEVICES INC·Filed 2006·Application pending·0 cites
- 2336US2003232466A1Diffusion barrier layer in semiconductor substrates to reduce copper contamination from the back sideFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →