Inventor · disambiguated record
Lukas Czornomaz
Also filed as: CZORNOMAZ LUKAS
56 granted patents·4 pending applications·186 citations·filing 2011–2021
98Inventor score
Top patents by PatentIndex Score
60 records- 0198US9891112B1Radiation detectorIBM·Filed 2016·Granted Feb 13, 2018·36 cites·20 claims
- 0296US10810506B1Qubit biasing scheme using non-volatile devicesIBM·Filed 2020·Granted Oct 20, 2020·10 cites·18 claims
- 0396US10340661B2Electro-optical device with lateral current injection regionsIBM·Filed 2017·Granted Jul 2, 2019·13 cites·13 claims
- 0495US9570169B1Resistive memory deviceIBM·Filed 2016·Granted Feb 14, 2017·30 cites·20 claims
- 0594US9129863B2Method to form dual channel group III-V and Si/Ge FINFET CMOSIBM·Filed 2014·Granted Sep 8, 2015·18 cites·15 claims
- 0693US9735010B1Fabrication of semiconductor fin structuresIBM·Filed 2016·Granted Aug 15, 2017·9 cites·25 claims
- 0792US9748098B2Controlled confined lateral III-V epitaxyIBM·Filed 2016·Granted Aug 29, 2017·6 cites·20 claims
- 0892US9239424B2Semiconductor device and method for fabricating the sameIBM·Filed 2014·Granted Jan 19, 2016·7 cites·25 claims
- 0991US9864134B2Semiconductor structure and method for manufacturing a semiconductor structureIBM·Filed 2013·Granted Jan 9, 2018·9 cites·8 claims
- 1089US9984929B1Fabricating contacts of a CMOS structureIBM·Filed 2017·Granted May 29, 2018·4 cites·19 claims
- 1187US9459405B2Method for fabricating a semiconductor device for use in an optical applicationIBM·Filed 2015·Granted Oct 4, 2016·2 cites·24 claims
- 1287US9437427B1Controlled confined lateral III-V epitaxyIBM·Filed 2015·Granted Sep 6, 2016·4 cites·13 claims
- 1385US9870953B2System on chip material co-integrationIBM·Filed 2015·Granted Jan 16, 2018·4 cites·15 claims
- 1482US9515090B2Method to form dual channel group III-V and Si/Ge FINFET CMOS and integrated circuit fabricated using the methodIBM·Filed 2015·Granted Dec 6, 2016·3 cites·8 claims
- 1580US9881921B2Fabricating a dual gate stack of a CMOS structureIBM·Filed 2017·Granted Jan 30, 2018·2 cites·20 claims
- 1680US9513436B2Semiconductor deviceIBM·Filed 2013·Granted Dec 6, 2016·5 cites·30 claims
- 1778US9786664B2Fabricating a dual gate stack of a CMOS structureIBM·Filed 2016·Granted Oct 10, 2017·2 cites·16 claims
- 1878US9704757B1Fabrication of semiconductor structuresIBM·Filed 2016·Granted Jul 11, 2017·2 cites·21 claims
- 1977US10734787B2Electro-optical device with lateral current injection regionsIBM·Filed 2019·Granted Aug 4, 2020·1 cites·16 claims
- 2077US10249492B2Fabrication of compound semiconductor structuresIBM·Filed 2016·Granted Apr 2, 2019·2 cites·6 claims
- 2177US9640394B2Method for fabricating a semiconductor structureIBM·Filed 2015·Granted May 2, 2017·2 cites·17 claims
- 2275US10447006B2Electro-optical device with asymmetric, vertical current injection ohmic contactsIBM·Filed 2017·Granted Oct 15, 2019·2 cites·22 claims
- 2375US10304934B2Fabricating raised source drain contacts of a CMOS structureIBM·Filed 2018·Granted May 28, 2019·1 cites·20 claims
- 2473US9997409B1Fabricating contacts of a CMOS structureIBM·Filed 2017·Granted Jun 12, 2018·1 cites·1 claims
- 2573US9917164B1Fabricating raised source drain contacts of a CMOS structureIBM·Filed 2017·Granted Mar 13, 2018·1 cites·1 claims
- 2670US9436215B2Touch surface and method of manufacturing sameNANOMADE CONCEPT·Filed 2015·Granted Sep 6, 2016·3 cites·13 claims
- 2768US10395732B2Resistive memory apparatus using variable-resistance channels with high- and low-resistance regionsIBM·Filed 2018·Granted Aug 27, 2019·2 cites·18 claims
- 2868US9953125B2Design/technology co-optimization platform for high-mobility channels CMOS technologyIBM·Filed 2016·Granted Apr 24, 2018·1 cites·18 claims
- 2967US9252157B2Method to form group III-V and Si/Ge FINFET on insulator and integrated circuit fabricated using the methodIBM·Filed 2015·Granted Feb 2, 2016·1 cites·8 claims
- 3067US9123585B1Method to form group III-V and Si/Ge FINFET on insulatorIBM·Filed 2014·Granted Sep 1, 2015·1 cites·12 claims
- 3166US11070029B2Method of forming an electro-optical device with lateral current injection regionsIBM·Filed 2019·Granted Jul 20, 2021·0 cites·10 claims
- 3265US10840264B2Ultra-thin-body GaN on insulator deviceIBM·Filed 2017·Granted Nov 17, 2020·1 cites·9 claims
- 3364US10763644B2Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystalsIBM·Filed 2019·Granted Sep 1, 2020·0 cites·10 claims
- 3463US10897121B2Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystalsIBM·Filed 2019·Granted Jan 19, 2021·0 cites·7 claims
- 3563US9337265B2Compound semiconductor structureGLOBALFOUNDRIES INC·Filed 2014·Granted May 10, 2016·1 cites·15 claims
- 3662US11270999B2Capacitorless DRAM cellIBM·Filed 2021·Granted Mar 8, 2022·0 cites·20 claims
- 3761US10410926B2Fabricating contacts of a CMOS structureIBM·Filed 2018·Granted Sep 10, 2019·0 cites·15 claims
- 3859US10103234B1Fabricating raised source drain contacts of a CMOS structureIBM·Filed 2017·Granted Oct 16, 2018·0 cites·18 claims
- 3958US10594111B2Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystalsIBM·Filed 2017·Granted Mar 17, 2020·0 cites·10 claims
- 4058US10529771B2Array of optoelectronic structures and fabrication thereofIBM·Filed 2018·Granted Jan 7, 2020·0 cites·19 claims
- 4158US9823414B2Method for fabricating a semiconductor device for use in an optical applicationIBM·Filed 2016·Granted Nov 21, 2017·0 cites·24 claims
- 4256US10529562B2Fabrication of compound semiconductor structuresIBM·Filed 2019·Granted Jan 7, 2020·0 cites·2 claims
- 4355US9923022B2Array of optoelectronic structures and fabrication thereofIBM·Filed 2016·Granted Mar 20, 2018·0 cites·19 claims
- 4453US10424478B2Fabrication of semiconductor fin structuresIBM·Filed 2017·Granted Sep 24, 2019·0 cites·23 claims
- 4553US10256092B2Fabrication of semiconductor structuresIBM·Filed 2017·Granted Apr 9, 2019·0 cites·13 claims
- 4650US11031402B1Capacitorless dram cellIBM·Filed 2019·Granted Jun 8, 2021·0 cites·19 claims
- 4749US11183978B2Low-noise amplifier with quantized conduction channelIBM·Filed 2019·Granted Nov 23, 2021·0 cites·23 claims
- 4848US2017011913A1Method for fabricating a semiconductor structureIBM·Filed 2016·Application pending·0 cites
- 4946US11674237B2Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layersIBM·Filed 2019·Granted Jun 13, 2023·0 cites·11 claims
- 5046US11075307B2Compact electro-optical devices with laterally grown contact layersIBM·Filed 2019·Granted Jul 27, 2021·0 cites·9 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →