Inventor · disambiguated record
Mark Simpson
Also filed as: SIMPSON MARK · SIMPSON MARK R
26 granted patents·6 pending applications·1,298 citations·filing 1995–2021
97Inventor score
Files withPHILIPS ELECTRONICS NA10KONINKL PHILIPS ELECTRONICS NV9JUNIPER NETWORKS INC2BOROCZKY LILLA1COMPAQ COMPUTER CORP1
Top patents by PatentIndex Score
32 records- 0194US9585259B1Apparatus and methods for placement of discrete components on internal printed circuit board layersJUNIPER NETWORKS INC·Filed 2015·Granted Feb 28, 2017·32 cites·20 claims
- 0294US6346451B1Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrodePHILIPS ELECTRONICS NA·Filed 1999·Granted Feb 12, 2002·234 cites·11 claims
- 0392US6313489B1Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a devicePHILIPS ELECTRONICS NA·Filed 1999·Granted Nov 6, 2001·137 cites·4 claims
- 0490US9185794B1Apparatus and methods for placement of discrete components on internal printed circuit board layersJUNIPER NETWORKS INC·Filed 2013·Granted Nov 10, 2015·14 cites·20 claims
- 0590US6468878B1SOI LDMOS structure with improved switching characteristicsKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Oct 22, 2002·56 cites·13 claims
- 0690US6310378B1High voltage thin film transistor with improved on-state characteristics and method for making samePHILIPS ELECTRONICS NA·Filed 2000·Granted Oct 30, 2001·57 cites·9 claims
- 0790US6127703ALateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension regionPHILIPS ELECTRONICS NA·Filed 1999·Granted Oct 3, 2000·97 cites·6 claims
- 0889US9202783B1Selective antipad backdrilling for printed circuit boardsSIMPSON MARK R·Filed 2011·Granted Dec 1, 2015·61 cites·18 claims
- 0988US5606521AElectrically erasable and programmable read only memory with non-uniform dielectric thicknessPHILIPS ELECTRONICS NA·Filed 1995·Granted Feb 25, 1997·84 cites·10 claims
- 1084US5634006ASystem and method for ensuring QOS in a token ring network utilizing an access regulator at each node for allocating frame size for plural transmitting applications based upon negotiated information and priority in the networkIBM·Filed 1995·Granted May 27, 1997·188 cites·19 claims
- 1183US6794719B2HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggednessKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Sep 21, 2004·32 cites·5 claims
- 1282US7113418B2Memory systems and methodsHEWLETT PACKARD DEVELOPMENT CO·Filed 2003·Granted Sep 26, 2006·39 cites·29 claims
- 1380US8494871B2Decision support system for acute dynamic diseasesSCHAFFER JAMES DAVID·Filed 2008·Granted Jul 23, 2013·9 cites·20 claims
- 1479US6023090ALateral thin-film Silicon-On-Insulator (SOI) device having multiple zones in the drift regionPHILIPS ELECTRONICS NA·Filed 1998·Granted Feb 8, 2000·46 cites·9 claims
- 1570US6927103B2Method and apparatus of terminating a high voltage solid state deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2003·Granted Aug 9, 2005·15 cites·5 claims
- 1669US2022114213A1System and method for clinical decision support for therapy planning using case-based reasoningKONINKLIJKE PHILIPS NV·Filed 2021·Application pending·0 cites
- 1766US5969387ALateral thin-film SOI devices with graded top oxide and graded drift regionPHILIPS ELECTRONICS NA·Filed 1998·Granted Oct 19, 1999·27 cites·10 claims
- 1865US6414365B1Thin-layer silicon-on-insulator (SOI) high-voltage device structureKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Jul 2, 2002·14 cites·18 claims
- 1963US6314516B1Method and apparatus for configuring communications settings in a computer systemCOMPAQ COMPUTER CORP·Filed 1999·Granted Nov 6, 2001·60 cites·26 claims
- 2063US6028337ALateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift regionPHILIPS NORTH AMERICA CORP·Filed 1998·Granted Feb 22, 2000·26 cites·6 claims
- 2162US2010332250A1Pre-examination medical data acquisition systemKONINKL PHILIPS ELECTRONICS NV·Filed 2008·Application pending·0 cites
- 2259US6221737B1Method of making semiconductor devices with graded top oxide and graded drift regionPHILIPS ELECTRONICS NA·Filed 1999·Granted Apr 24, 2001·25 cites·17 claims
- 2358US6642558B1Method and apparatus of terminating a high voltage solid state deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Nov 4, 2003·8 cites·11 claims
- 2455US6232636B1Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift regionPHILIPS ELECTRONICS NA·Filed 1998·Granted May 15, 2001·16 cites·8 claims
- 2553US7268046B2Dual gate oxide high-voltage semiconductor device and method for forming the sameKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Granted Sep 11, 2007·4 cites·8 claims
- 2652US6847081B2Dual gate oxide high-voltage semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Jan 25, 2005·4 cites·13 claims
- 2751US6362504B1Contoured nonvolatile memory cellPHILIPS ELECTRONICS NA·Filed 1995·Granted Mar 26, 2002·13 cites·9 claims
- 2847US2013268547A1System and method for clinical decision support for therapy planning using case-based reasoningBOROCZKY LILLA·Filed 2011·Application pending·0 cites
- 2941US9798778B2System and method for dynamic growing of a patient database with cases demonstrating special characteristicsXU YE·Filed 2011·Granted Oct 24, 2017·0 cites·15 claims
- 3040US2004232510A1HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggednessFiled 2004·Application pending·0 cites
- 3137US2003107050A1High frequency high voltage silicon-on-insulator device with mask variable inversion channel and method for forming the sameKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Application pending·0 cites
- 3233US2005259368A1Method and apparatus of terminating a high voltage solid state deviceLETAVIC TED·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →