Inventor · disambiguated record
Fumitake Nakanishi
Also filed as: NAKANISHI FUMITAKE
17 granted patents·5 pending applications·38 citations·filing 2005–2022
90Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES12YOSHIZUMI YUSUKE2ENYA YOHEI1FUJIWARA SHINSUKE1ISHIBASHI KEIJI1
Top patents by PatentIndex Score
22 records- 0192US7873088B2Group III nitride semiconductor element and epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Jan 18, 2011·11 cites·21 claims
- 0292US7863609B2Compound semiconductor substrate, semiconductor device, and processes for producing themSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Jan 4, 2011·8 cites·9 claims
- 0384US9136337B2Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 15, 2015·7 cites·10 claims
- 0481US10600676B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 24, 2020·2 cites·14 claims
- 0577US7932114B2Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwaferSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Apr 26, 2011·2 cites·4 claims
- 0674US9917004B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 13, 2018·2 cites·9 claims
- 0774US8107507B2Group III nitride semiconductor element and epitaxial waferYOSHIZUMI YUSUKE·Filed 2010·Granted Jan 31, 2012·2 cites·23 claims
- 0867US11094537B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Aug 17, 2021·0 cites·15 claims
- 0965US11891720B2Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Feb 6, 2024·0 cites·11 claims
- 1065US9312340B2Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Apr 12, 2016·1 cites·10 claims
- 1157US8605769B2Semiconductor laser device and manufacturing method thereofYOSHIMOTO SUSUMU·Filed 2005·Granted Dec 10, 2013·3 cites·4 claims
- 1257US8471264B2Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwaferNAKANISHI FUMITAKE·Filed 2011·Granted Jun 25, 2013·0 cites·1 claims
- 1354US8242498B2Compound semiconductor substrate, semiconductor device, and processes for producing themISHIBASHI KEIJI·Filed 2010·Granted Aug 14, 2012·0 cites·20 claims
- 1453US8391327B2Group III nitride semiconductor element and epitaxial waferYOSHIZUMI YUSUKE·Filed 2012·Granted Mar 5, 2013·0 cites·23 claims
- 1552US2024426024A1Group iii-v compound semiconductor single crystal substrate and production method thereforSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 1651US8253162B2GaN substrate and light-emitting deviceFUJIWARA SHINSUKE·Filed 2010·Granted Aug 28, 2012·0 cites·4 claims
- 1748US8173458B2Method for forming quantum well structure and method for manufacturing semiconductor light emitting elementENYA YOHEI·Filed 2009·Granted May 8, 2012·0 cites·20 claims
- 1847US2011236175A1Processing method and fabrication method of semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 1946US2010013058A1Semiconductor Wafer and Semiconductor Wafer Inspection MethodSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 2043US2012305933A1Group iii nitride semiconductor light-emitting deviceNAKAHATA SEIJI·Filed 2012·Application pending·0 cites
- 2141US2012034763A1Method of Manufacturing Nitride Semiconductor SubstrateOSADA HIDEKI·Filed 2011·Application pending·0 cites
- 2238US8274088B2Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereofMATSUBARA HIDEKI·Filed 2007·Granted Sep 25, 2012·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →