Inventor · disambiguated record
Seshadri Ramaswami
Also filed as: RAMASWAMI SESHADRI
39 granted patents·16 pending applications·752 citations·filing 1992–2025
98Inventor score
Files withAPPLIED MATERIALS INC43ADVANCED MICRO DEVICES INC6LEI WEI-SHENG2APPLIED MATERIAL INC1SCHUEGRAF KLAUS1
Top patents by PatentIndex Score
55 records- 0191US6627542B1Continuous, non-agglomerated adhesion of a seed layer to a barrier layerAPPLIED MATERIALS INC·Filed 2000·Granted Sep 30, 2003·64 cites·42 claims
- 0290US11094573B2Method and apparatus for thin wafer carrierAPPLIED MATERIALS INC·Filed 2018·Granted Aug 17, 2021·3 cites·18 claims
- 0389US6139701ACopper target for sputter depositionAPPLIED MATERIALS INC·Filed 1999·Granted Oct 31, 2000·85 cites·40 claims
- 0488US6391163B1Method of enhancing hardness of sputter deposited copper filmsAPPLIED MATERIALS INC·Filed 2000·Granted May 21, 2002·37 cites·20 claims
- 0583US6420260B1Ti/Tinx underlayer which enables a highly <111> oriented aluminum interconnectAPPLIED MATERIALS INC·Filed 2000·Granted Jul 16, 2002·34 cites·8 claims
- 0683US6086725ATarget for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through lifeAPPLIED MATERIALS INC·Filed 1998·Granted Jul 11, 2000·48 cites·31 claims
- 0782US6001227ATarget for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such targetAPPLIED MATERIALS INC·Filed 1997·Granted Dec 14, 1999·40 cites·30 claims
- 0880US5925225AMethod of producing smooth titanium nitride films having low resistivityAPPLIED MATERIALS INC·Filed 1997·Granted Jul 20, 1999·41 cites·10 claims
- 0980US5451545AProcess for forming stable local interconnect/active area silicide structure VLSI applicationsADVANCED MICRO DEVICES INC·Filed 1994·Granted Sep 19, 1995·54 cites·5 claims
- 1079US12211947B2Copper, indium, gallium, selenium (CIGS) films with improved quantum efficiencyAPPLIED MATERIALS INC·Filed 2023·Granted Jan 28, 2025·0 cites·13 claims
- 1179US8940619B2Method of diced wafer transportationLEI WEI-SHENG·Filed 2013·Granted Jan 27, 2015·3 cites·15 claims
- 1279US5456756AHolding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor waferADVANCED MICRO DEVICES INC·Filed 1994·Granted Oct 10, 1995·58 cites·18 claims
- 1379US2025098363A1Copper, indium, gallium, selenium (cigs) films with improved quantum efficiencyAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1477US10665494B2Automated apparatus to temporarily attach substrates to carriers without adhesives for processingAPPLIED MATERIALS INC·Filed 2018·Granted May 26, 2020·3 cites·20 claims
- 1576US6599399B2Sputtering method to generate ionized metal plasma using electron beams and magnetic fieldAPPLIED MATERIALS INC·Filed 1997·Granted Jul 29, 2003·29 cites·22 claims
- 1676US5882399AMethod of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnectAPPLIED MATERIALS INC·Filed 1997·Granted Mar 16, 1999·52 cites·30 claims
- 1775US6475356B1Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Nov 5, 2002·20 cites·33 claims
- 1870US6521107B2Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through lifeAPPLIED MATERIALS INC·Filed 2001·Granted Feb 18, 2003·8 cites·12 claims
- 1969US5614446AHolding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor waferADVANCED MICRO DEVICES INC·Filed 1995·Granted Mar 25, 1997·30 cites·7 claims
- 2067US10879094B2Electrostatic chucking force measurement tool for process chamber carriersAPPLIED MATERIALS INC·Filed 2016·Granted Dec 29, 2020·1 cites·19 claims
- 2167US6228186B1Method for manufacturing metal sputtering target for use in DC magnetron so that target has reduced number of conduction anomaliesAPPLIED MATERIALS INC·Filed 1999·Granted May 8, 2001·23 cites·37 claims
- 2266US12262559B2Monolithic complementary field-effect transistors having carbon-doped release layersAPPLIED MATERIALS INC·Filed 2022·Granted Mar 25, 2025·0 cites·13 claims
- 2365US6046100AMethod of fabricating a fabricating plug and near-zero overlap interconnect lineAPPLIED MATERIALS INC·Filed 1996·Granted Apr 4, 2000·27 cites·17 claims
- 2465US2025194243A1Monolithic complementary field-effect transistors having carbon-doped release layersAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2564US11728449B2Copper, indium, gallium, selenium (CIGS) films with improved quantum efficiencyAPPLIED MATERIALS INC·Filed 2019·Granted Aug 15, 2023·0 cites·18 claims
- 2664US11088293B2Methods and apparatus for producing copper-indium-gallium-selenium (CIGS) filmAPPLIED MATERIALS INC·Filed 2019·Granted Aug 10, 2021·0 cites·20 claims
- 2764US6436207B1Manufacture of target for use in magnetron sputtering of nickel and like magnetic metals for forming metallization films having consistent uniformity through lifeAPPLIED MATERIAL INC·Filed 2000·Granted Aug 20, 2002·4 cites·28 claims
- 2862US11018275B2Method of creating CIGS photodiode for image sensor applicationsAPPLIED MATERIALS INC·Filed 2019·Granted May 25, 2021·0 cites·20 claims
- 2961US2025338641A1Deep trench sidewall passivation using conformal plasma doping and low-temperature thermal treatmentsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3061US2025204061A1Complementary metal oxide semiconductor image sensor with reduced p-type region widthAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3160US8580615B2Method and system for wafer level singulationSCHUEGRAF KLAUS·Filed 2012·Granted Nov 12, 2013·1 cites·9 claims
- 3258US6899799B2Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasmaAPPLIED MATERIALS INC·Filed 2002·Granted May 31, 2005·6 cites·16 claims
- 3358US6171455B1Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such targetAPPLIED MATERIALS INC·Filed 1999·Granted Jan 9, 2001·15 cites·24 claims
- 3457US6472867B1Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through lifeAPPLIED MATERIALS INC·Filed 2001·Granted Oct 29, 2002·3 cites·19 claims
- 3555US6126791ATarget for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such targetAPPLIED MATERIALS INC·Filed 1999·Granted Oct 3, 2000·12 cites·25 claims
- 3655US2015102467A1Method of diced wafer transportationLEI WEI-SHENG·Filed 2014·Application pending·0 cites
- 3754US9502294B2Method and system for wafer level singulationAPPLIED MATERIALS INC·Filed 2013·Granted Nov 22, 2016·0 cites·10 claims
- 3853US6455921B1Fabricating plug and near-zero overlap interconnect lineAPPLIED MATERIALS INC·Filed 2000·Granted Sep 24, 2002·4 cites·23 claims
- 3953US6059872ASmooth titanium nitride films having low resistivityAPPLIED MATERIALS INC·Filed 1998·Granted May 9, 2000·11 cites·3 claims
- 4048US2021111222A1PROCESS TO IMPROVE INTERFACE STATE DENSITY Dit ON DEEP TRENCH ISOLATION (DTI) FOR CMOS IMAGE SENSORAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 4147US5539247ASelective metal via plug growth technology for deep sub-micrometer ULSIADVANCED MICRO DEVICES INC·Filed 1995·Granted Jul 23, 1996·13 cites·16 claims
- 4246US5365111AStable local interconnect/active area silicide structure for VLSI applicationsADVANCED MICRO DEVICES INC·Filed 1992·Granted Nov 15, 1994·12 cites·3 claims
- 4346US2018281151A1Adhesive-less carriers for chemical mechanical polishingAPPLIED MATERIALS INC·Filed 2017·Application pending·0 cites
- 4445US2005205414A1Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasmaAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 4545US2021151949A1Bonding vertical cavity surface emitting laser die onto a silicon waferAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 4644US2020006412A1Methods and apparatus for image sensor semiconductorsAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 4743US2002125123A1Method of producing smooth titanium nitride films having low resistivityFiled 2002·Application pending·0 cites
- 4843US2019362965A1Methods of patterning a wafer substrateAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 4942US6149777AMethod of producing smooth titanium nitride films having low resistivityAPPLIED MATERIALS INC·Filed 1999·Granted Nov 21, 2000·6 cites·6 claims
- 5040US2002088716A1Method of enhancing hardness of sputter deposited copper filmsFiled 2002·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →