Inventor · disambiguated record
Eun-Jung Yun
Also filed as: YUN EUN-JUNG
48 granted patents·15 pending applications·1,065 citations·filing 2003–2022
98Inventor score
Top patents by PatentIndex Score
63 records- 0199US7402483B2Methods of forming a multi-bridge-channel MOSFETSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 22, 2008·284 cites·20 claims
- 0298US8179711B2Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cellKIM SUNG-MIN·Filed 2008·Granted May 15, 2012·122 cites·32 claims
- 0398US7696032B2Semiconductor device including a crystal semiconductor layer, its fabrication and its operationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 13, 2010·117 cites·20 claims
- 0497US7382018B23-Dimensional flash memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 3, 2008·59 cites·18 claims
- 0597US7265418B2Semiconductor devices having field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 4, 2007·70 cites·7 claims
- 0696US7253060B2Gate-all-around type of semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 7, 2007·56 cites·25 claims
- 0795US7972914B2Semiconductor device with FinFET and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·26 cites·17 claims
- 0894US7696046B2Method of manufacturing a semiconductor device having a multi-channel type MOS transistorSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 13, 2010·21 cites·20 claims
- 0993US8129777B2Semiconductor device having a multi-channel type MOS transistorKIM MIN-SANG·Filed 2010·Granted Mar 6, 2012·15 cites·7 claims
- 1093US8129800B2Gate-all-around integrated circuit devicesYUN EUN-JUNG·Filed 2006·Granted Mar 6, 2012·25 cites·14 claims
- 1192US7453716B2Semiconductor memory device with stacked control transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 18, 2008·28 cites·41 claims
- 1289US7800172B2Methods of forming semiconductor devices having multiple channel MOS transistors and related intermediate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 21, 2010·14 cites·7 claims
- 1388US7348246B2Methods of fabricating non-volatile memory devices including divided charge storage structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 25, 2008·13 cites·10 claims
- 1485US7473963B2Metal oxide semiconductor (MOS) transistors having three dimensional channelsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 6, 2009·8 cites·16 claims
- 1585US7285466B2Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channelsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 23, 2007·28 cites·31 claims
- 1684US7897463B2Methods of fabricating vertical twin-channel transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Mar 1, 2011·6 cites·14 claims
- 1784US7781290B2Complementary metal-oxide semiconductor (CMOS) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·9 cites·29 claims
- 1883US7662720B23-Dimensional flash memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 16, 2010·8 cites·14 claims
- 1981US6914316B2Semiconductor trench isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·30 cites·7 claims
- 2080US7943998B2Nonvolatile memory devices having stacked structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 17, 2011·7 cites·19 claims
- 2178US8168492B2Field effect transistors with vertically oriented gate electrodes and methods for fabricating the sameKIM SUNG-MIN·Filed 2010·Granted May 1, 2012·4 cites·48 claims
- 2278US7442987B2Non-volatile memory devices including divided charge storage structuresSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 28, 2008·6 cites·17 claims
- 2378US7122431B2Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·20 cites·18 claims
- 2477US7851287B2Method of fabricating Schottky barrier FinFET deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Dec 14, 2010·3 cites·10 claims
- 2577US7719068B2Multi-bit electro-mechanical memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 18, 2010·6 cites·13 claims
- 2675US7790494B2Method of fabricating a multi-bit electro-mechanical memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 7, 2010·6 cites·9 claims
- 2775US7768070B2Semiconductor devices having field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 3, 2010·5 cites·12 claims
- 2873US7723762B2Schottky barrier FinFET device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 25, 2010·3 cites·17 claims
- 2973US7511998B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·5 cites·20 claims
- 3072US8835993B2Gate-all-around integrated circuit devicesYUN EUN-JUNG·Filed 2012·Granted Sep 16, 2014·2 cites·14 claims
- 3172US7791936B2Multibit electro-mechanical memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 7, 2010·6 cites·20 claims
- 3272US7541645B2Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·4 cites·9 claims
- 3371US7129541B2Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 31, 2006·13 cites·18 claims
- 3470US8222067B2Method of manufacturing multibit electro-mechanical memory device having movable electrodeYUN EUN-JUNG·Filed 2011·Granted Jul 17, 2012·2 cites·15 claims
- 3570US7803697B2Highly integrated semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 28, 2010·3 cites·13 claims
- 3670US7285456B2Method of fabricating a fin field effect transistor having a plurality of protruding channelsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 23, 2007·3 cites·28 claims
- 3767US8198704B2Semiconductor device including a crystal semiconductor layerKIM SUNG-MIN·Filed 2010·Granted Jun 12, 2012·1 cites·12 claims
- 3867US7821821B2Multibit electro-mechanical device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 26, 2010·6 cites·7 claims
- 3966US7709356B2Methods of forming a pattern and methods of manufacturing a memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 4, 2010·2 cites·9 claims
- 4064US11719833B2Radon measuring apparatus and methodARIM SCIENCE CO·Filed 2022·Granted Aug 8, 2023·0 cites·10 claims
- 4164US7316968B2Methods of forming semiconductor devices having multiple channel MOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 8, 2008·9 cites·33 claims
- 4258US7187022B2Semiconductor device having a multi-bridge-channel and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 6, 2007·1 cites·10 claims
- 4357US7482649B2Multi-bit nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·1 cites·20 claims
- 4457US7037768B2Methods of etching intermediate silicon germanium layers using ion implantation to promote selectivitySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·5 cites·20 claims
- 4557US2006231907A1Semiconductor device with FinFET and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4656US2006240622A1Multi-channel semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4755US7973343B2Multibit electro-mechanical memory device having cantilever electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 5, 2011·1 cites·16 claims
- 4852US2012223373A1Semiconductor device including a crystal semiconductor layer, its fabrication and its operationKIM SUNG-MIN·Filed 2012·Application pending·0 cites
- 4951US2006175669A1Semiconductor device including FinFET having metal gate electrode and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 5047US2008029811A1Vertical Twin-Channel Transistors and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
Showing the top 50 of 63 patent records by PatentIndex Score.
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