Inventor · disambiguated record
Hong Yang
Also filed as: YANG HONG · YANG HONG S · YANG HONG SEON
69 granted patents·17 pending applications·488 citations·filing 1993–2024
99Inventor score
Files withTEXAS INSTRUMENTS INC37HYNIX SEMICONDUCTOR INC26HYUNDAI ELECTRONICS IND5SAMSUNG ELECTRONICS CO LTD5CHARTERED SEMICONDUCTOR MFG2
Top patents by PatentIndex Score
86 records- 0198US9299830B1Multiple shielding trench gate fetTEXAS INSTRUMENTS INC·Filed 2015·Granted Mar 29, 2016·30 cites·20 claims
- 0296US8748976B1Dual RESURF trench field plate in vertical MOSFETTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 10, 2014·48 cites·19 claims
- 0395US9397180B1Low resistance sinker contactTEXAS INSTRUMENTS INC·Filed 2015·Granted Jul 19, 2016·14 cites·11 claims
- 0492US10109717B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 23, 2018·8 cites·10 claims
- 0590US7045846B2Memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted May 16, 2006·17 cites·20 claims
- 0689US7968912B2Semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Jun 28, 2011·8 cites·9 claims
- 0787US11658241B2Vertical trench gate MOSFET with integrated Schottky diodeTEXAS INSTRUMENTS INC·Filed 2018·Granted May 23, 2023·4 cites·20 claims
- 0887US7112486B2Method for fabricating semiconductor device by using radical oxidationHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Sep 26, 2006·47 cites·18 claims
- 0985US7687357B2Semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 30, 2010·8 cites·27 claims
- 1084US9711639B2Multiple shielding trench gate FETTEXAS INSTRUMENTS INC·Filed 2016·Granted Jul 18, 2017·3 cites·10 claims
- 1184US9461131B1High quality deep trench oxideTEXAS INSTRUMENTS INC·Filed 2015·Granted Oct 4, 2016·3 cites·14 claims
- 1283US7842594B2Semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 30, 2010·8 cites·19 claims
- 1382US7029999B2Method for fabricating transistor with polymetal gate electrodeHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 18, 2006·30 cites·17 claims
- 1480US10720499B2Semiconductor device having polysilicon field plate for power MOSFETsTEXAS INSTRUMENTS INC·Filed 2018·Granted Jul 21, 2020·2 cites·18 claims
- 1580US6287910B2Method for forming a capacitor using tantalum nitride as a capacitor dielectricHYUNDAI ELECTRONICS IND·Filed 2000·Granted Sep 11, 2001·22 cites·20 claims
- 1680US5387539AMethod of manufacturing trench isolationHYUNDAI ELECTRONICS IND·Filed 1993·Granted Feb 7, 1995·67 cites·4 claims
- 1779US7915108B2Method for fabricating a semiconductor device with a FinFETHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 29, 2011·8 cites·23 claims
- 1878US11127852B2Vertical trench gate MOSFET with deep well region for junction terminationTEXAS INSTRUMENTS INC·Filed 2018·Granted Sep 21, 2021·2 cites·32 claims
- 1978US9991350B2Low resistance sinker contactTEXAS INSTRUMENTS INC·Filed 2016·Granted Jun 5, 2018·2 cites·20 claims
- 2078US8410547B2Semiconductor device and method for fabricating the sameCHO HEUNG-JAE·Filed 2010·Granted Apr 2, 2013·4 cites·18 claims
- 2177US9865718B1Power MOSFET with metal filled deep sinker contact for CSPTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 9, 2018·3 cites·20 claims
- 2277US9455222B1IC having failsafe fuse on field dielectricTEXAS INSTRUMENTS INC·Filed 2015·Granted Sep 27, 2016·3 cites·18 claims
- 2377US9230851B2Reduction of polysilicon residue in a trench for polysilicon trench filling processesTEXAS INSTRUMENTS INC·Filed 2014·Granted Jan 5, 2016·4 cites·12 claims
- 2477US8441079B2Semiconductor device with gate stack structureLIM KWAN-YONG·Filed 2011·Granted May 14, 2013·3 cites·15 claims
- 2576US7902614B2Semiconductor device with gate stack structureHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 8, 2011·4 cites·11 claims
- 2676US7687389B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 30, 2010·6 cites·10 claims
- 2775US7776694B2Method for fabricating a transistor having vertical channelHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Aug 17, 2010·5 cites·17 claims
- 2872US8048742B2Transistor including bulb-type recess channel and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 1, 2011·4 cites·11 claims
- 2972US8008178B2Method for fabricating semiconductor device with an intermediate stack structureHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 30, 2011·3 cites·25 claims
- 3071US10586852B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 10, 2020·1 cites·15 claims
- 3171US9825030B2High quality deep trench oxideTEXAS INSTRUMENTS INC·Filed 2016·Granted Nov 21, 2017·1 cites·4 claims
- 3271US6531372B2Method of manufacturing capacitor of semiconductor device using an amorphous TaONHYNIX SEMICONDUCTOR INC·Filed 2000·Granted Mar 11, 2003·14 cites·16 claims
- 3370US6096647AMethod to form CoSi2 on shallow junction by Si implantationCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Aug 1, 2000·32 cites·25 claims
- 3469US7781333B2Semiconductor device with gate structure and method for fabricating the semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·2 cites·16 claims
- 3568US7838364B2Semiconductor device with bulb-type recessed channel and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 23, 2010·3 cites·17 claims
- 3667US11791198B2Trench shield isolation layerTEXAS INSTRUMENTS INC·Filed 2022·Granted Oct 17, 2023·0 cites·17 claims
- 3767US9064854B2Semiconductor device with gate stack structureSK HYNIX INC·Filed 2013·Granted Jun 23, 2015·1 cites·19 claims
- 3867US7816209B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Oct 19, 2010·2 cites·18 claims
- 3967US2023246107A1Vertical trench gate mosfet with integrated schottky diodeTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 4064US6420236B1Hydrogen treatment for threshold voltage shift of metal gate MOSFET devicesTEXAS INSTRUMENTS INC·Filed 2000·Granted Jul 16, 2002·12 cites·23 claims
- 4161US2021272842A1Transistor device with sinker contacts and methods for manufacturing the sameTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 4259US8592899B2Transistor having vertical channelJANG SE-AUG·Filed 2010·Granted Nov 26, 2013·1 cites·14 claims
- 4359US2020335589A1Semiconductor device having polysilicon field plate for power mosfetsTEXAS INSTRUMENTS INC·Filed 2020·Application pending·0 cites
- 4458US10573553B2Semiconductor product and fabrication processTEXAS INSTRUMENTS INC·Filed 2019·Granted Feb 25, 2020·0 cites·20 claims
- 4558US10541326B2Multiple shielding trench gate FETTEXAS INSTRUMENTS INC·Filed 2017·Granted Jan 21, 2020·0 cites·20 claims
- 4658US10347626B2High quality deep trench oxideTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 9, 2019·0 cites·9 claims
- 4758US2024429290A1Nexfet ngen3.2 mv dual shield oxide damage solutionTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 4857US11302568B2Trench shield isolation layerTEXAS INSTRUMENTS INC·Filed 2019·Granted Apr 12, 2022·0 cites·18 claims
- 4956US9653342B2Trench having thick dielectric selectively on bottom portionTEXAS INSTRUMENTS INC·Filed 2014·Granted May 16, 2017·0 cites·14 claims
- 5056US5893747AMethod of manufacturing a polysilicon film of a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1996·Granted Apr 13, 1999·20 cites·24 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →