Inventor · disambiguated record
Mehul Naik
Also filed as: NAIK MEHUL · NAIK MEHUL B · NAIK MEHUL BHAGUBHAI
110 granted patents·28 pending applications·1,826 citations·filing 1996–2025
99Inventor score
Files withAPPLIED MATERIALS INC123RAJAGOPALAN NAGARAJAN3CUI ZHENJIANG2KIM EUI KYOON2MICROMATERIALS LLC2
Top patents by PatentIndex Score
138 records- 0198US6548396B2Method of producing an interconnect structure for an integrated circuitAPPLIED MATERIALS INC·Filed 2001·Granted Apr 15, 2003·268 cites·19 claims
- 0297US6656837B2Method of eliminating photoresist poisoning in damascene applicationsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 2, 2003·285 cites·17 claims
- 0396US11101174B2Gap fill deposition processAPPLIED MATERIALS INC·Filed 2019·Granted Aug 24, 2021·16 cites·19 claims
- 0496US10957533B2Methods for etching a structure for semiconductor applicationsAPPLIED MATERIALS INC·Filed 2019·Granted Mar 23, 2021·15 cites·20 claims
- 0596US10636704B2Seam-healing method upon supra-atmospheric process in diffusion promoting ambientAPPLIED MATERIALS INC·Filed 2018·Granted Apr 28, 2020·14 cites·20 claims
- 0696US10410918B2Enhanced cobalt agglomeration resistance and gap-fill performance by ruthenium dopingAPPLIED MATERIALS INC·Filed 2018·Granted Sep 10, 2019·17 cites·20 claims
- 0796US7879683B2Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delayAPPLIED MATERIALS INC·Filed 2007·Granted Feb 1, 2011·35 cites·17 claims
- 0896US7244672B2Selective etching of organosilicate films over silicon oxide stop etch layersAPPLIED MATERIALS INC·Filed 2005·Granted Jul 17, 2007·36 cites·18 claims
- 0995US10916433B2Methods of forming metal silicide layers and metal silicide layers formed therefromAPPLIED MATERIALS INC·Filed 2019·Granted Feb 9, 2021·14 cites·16 claims
- 1095US10566188B2Method to improve film stabilityAPPLIED MATERIALS INC·Filed 2018·Granted Feb 18, 2020·16 cites·20 claims
- 1195US10049927B2Seam-healing method upon supra-atmospheric process in diffusion promoting ambientAPPLIED MATERIALS INC·Filed 2016·Granted Aug 14, 2018·14 cites·20 claims
- 1295US9761489B2Self-aligned interconnects formed using substractive techniquesAPPLIED MATERIALS INC·Filed 2013·Granted Sep 12, 2017·20 cites·2 claims
- 1395US7928003B2Air gap interconnects using carbon-based filmsAPPLIED MATERIALS INC·Filed 2008·Granted Apr 19, 2011·30 cites·28 claims
- 1494US7811924B2Air gap formation and integration using a patterning capAPPLIED MATERIALS INC·Filed 2008·Granted Oct 12, 2010·28 cites·18 claims
- 1592US9640424B2Integrated metal spacer and air gap interconnectAPPLIED MATERIALS INC·Filed 2016·Granted May 2, 2017·6 cites·20 claims
- 1691US6514857B1Damascene structure fabricated using a layer of silicon-based photoresist materialAPPLIED MATERIALS INC·Filed 2001·Granted Feb 4, 2003·57 cites·16 claims
- 1791US6245662B1Method of producing an interconnect structure for an integrated circuitAPPLIED MATERIALS INC·Filed 1998·Granted Jun 12, 2001·114 cites·19 claims
- 1891US6204168B1Damascene structure fabricated using a layer of silicon-based photoresist materialAPPLIED MATERIALS INC·Filed 1998·Granted Mar 20, 2001·113 cites·9 claims
- 1990US9269563B2Methods for forming interconnect structure utilizing selective protection process for hardmask removal processAPPLIED MATERIALS INC·Filed 2014·Granted Feb 23, 2016·9 cites·18 claims
- 2090US7226853B2Method of forming a dual damascene structure utilizing a three layer hard mask structureAPPLIED MATERIALS INC·Filed 2002·Granted Jun 5, 2007·51 cites·27 claims
- 2190US6458684B1Single step process for blanket-selective CVD aluminum depositionAPPLIED MATERIALS INC·Filed 2000·Granted Oct 1, 2002·42 cites·20 claims
- 2289US9425092B2Methods for producing interconnects in semiconductor devicesAPPLIED MATERIALS INC·Filed 2014·Granted Aug 23, 2016·8 cites·18 claims
- 2388US11410885B2Fully aligned subtractive processes and electronic devices therefromAPPLIED MATERIALS INC·Filed 2020·Granted Aug 9, 2022·2 cites·10 claims
- 2488US10643895B2Self-aligned interconnects formed using subtractive techniquesAPPLIED MATERIALS INC·Filed 2017·Granted May 5, 2020·5 cites·14 claims
- 2588US7618889B2Dual damascene fabrication with low k materialsAPPLIED MATERIALS INC·Filed 2006·Granted Nov 17, 2009·13 cites·21 claims
- 2688US7205228B2Selective metal encapsulation schemesAPPLIED MATERIALS INC·Filed 2004·Granted Apr 17, 2007·40 cites·33 claims
- 2788US6680164B2Solvent free photoresist strip and residue removal processing for post etching of low-k filmsAPPLIED MATERIALS INC·Filed 2001·Granted Jan 20, 2004·42 cites·44 claims
- 2888US6168726B1Etching an oxidized organo-silane filmAPPLIED MATERIALS INC·Filed 1998·Granted Jan 2, 2001·107 cites·40 claims
- 2987US9613859B2Direct deposition of nickel silicide nanowireAPPLIED MATERIALS INC·Filed 2015·Granted Apr 4, 2017·5 cites·19 claims
- 3087US9305831B2Integrated metal spacer and air gap interconnectAPPLIED MATERIALS INC·Filed 2015·Granted Apr 5, 2016·4 cites·20 claims
- 3187US8283237B2Fabrication of through-silicon vias on silicon wafersRAJAGOPALAN NAGARAJAN·Filed 2010·Granted Oct 9, 2012·11 cites·34 claims
- 3286US10256144B2Process integration approach of selective tungsten via fillAPPLIED MATERIALS INC·Filed 2017·Granted Apr 9, 2019·5 cites·20 claims
- 3386US7115534B2Dielectric materials to prevent photoresist poisoningAPPLIED MATERIALS INC·Filed 2004·Granted Oct 3, 2006·39 cites·21 claims
- 3485US8951911B2Process for damascene structure with reduced low-k damageNAIK MEHUL B·Filed 2011·Granted Feb 10, 2015·12 cites·1 claims
- 3585US8563095B2Silicon nitride passivation layer for covering high aspect ratio featuresRAJAGOPALAN NAGARAJAN·Filed 2010·Granted Oct 22, 2013·11 cites·35 claims
- 3684US9508561B2Methods for forming interconnection structures in an integrated cluster system for semicondcutor applicationsAPPLIED MATERIALS INC·Filed 2014·Granted Nov 29, 2016·6 cites·20 claims
- 3784US6514671B1Interconnect line formed by dual damascene using dielectric layers having dissimilar etching characteristicsAPPLIED MATERIALS INC·Filed 2000·Granted Feb 4, 2003·39 cites·14 claims
- 3881US9601431B2Dielectric/metal barrier integration to prevent copper diffusionAPPLIED MATERIALS INC·Filed 2014·Granted Mar 21, 2017·4 cites·1 claims
- 3981US6169030B1Metallization process and methodAPPLIED MATERIALS INC·Filed 1998·Granted Jan 2, 2001·57 cites·25 claims
- 4080US11380536B2Multi-step pre-clean for selective metal gap fillAPPLIED MATERIALS INC·Filed 2020·Granted Jul 5, 2022·1 cites·18 claims
- 4180US11164780B2Process integration approach for selective metal via fillAPPLIED MATERIALS INC·Filed 2019·Granted Nov 2, 2021·3 cites·15 claims
- 4280US10388533B2Process integration method to tune resistivity of nickel silicideAPPLIED MATERIALS INC·Filed 2018·Granted Aug 20, 2019·2 cites·20 claims
- 4380US10008448B2Dielectric/metal barrier integration to prevent copper diffusionAPPLIED MATERIALS INC·Filed 2017·Granted Jun 26, 2018·2 cites·14 claims
- 4480US10002834B2Method and apparatus for protecting metal interconnect from halogen based precursorsAPPLIED MATERIALS INC·Filed 2015·Granted Jun 19, 2018·3 cites·20 claims
- 4580US8329575B2Fabrication of through-silicon vias on silicon wafersRAJAGOPALAN NAGARAJAN·Filed 2010·Granted Dec 11, 2012·6 cites·24 claims
- 4679US11373903B2Doped selective metal caps to improve copper electromigration with ruthenium linerAPPLIED MATERIALS INC·Filed 2017·Granted Jun 28, 2022·2 cites·7 claims
- 4778US10727119B2Process integration approach of selective tungsten via fillAPPLIED MATERIALS INC·Filed 2019·Granted Jul 28, 2020·2 cites·20 claims
- 4878US10109520B2Methods for depositing dielectric barrier layers and aluminum containing etch stop layersAPPLIED MATERIALS INC·Filed 2016·Granted Oct 23, 2018·2 cites·14 claims
- 4978US9570345B1Cobalt resistance recovery by hydrogen annealAPPLIED MATERIALS INC·Filed 2016·Granted Feb 14, 2017·3 cites·18 claims
- 5077US12046508B2Method of dielectric material fill and treatmentAPPLIED MATERIALS INC·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
Showing the top 50 of 138 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →